High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

High-performance EML grown on taper-masked pattern substrates by ultra-low-pressure MOCVD

A novel in-plane bandgap energy controlling technique by ultra-low pressure (22 mbar) selective area growth (SAG) has been developed. To our knowledge, this is the lowest pressure condition during SAG process ever reported. In this work, high crystalline quality InGaAsP-InP MQWs with a photoluminescence (PL) full-width at half-maximum (FWHM) of less than 35meV are selectively grown on mask-patterned planar InP substrates by ultra-low pressure (22 mbar) metal-organic chemical vapor deposition (MOCVD). In order to study the uniformity of the MQWs grown in the selective area, novel tapered masks are designed and used. Through optimizing growth conditions, a wide wavelength shift of over 80 nm with a rather small mask width variation (0-30 mu m) is obtained. The mechanism of ultra-low pressure SAG is detailed by analyzing the effect of various mask designs and quantum well widths. This powerful technique is then applied to fabricate an electroabsorption-modulated laser (EML). Superior device characteristics are achieved, such as a low threshold current of 19mA and an output power of 7mW. (c) 2005 Elsevier B.V. All rights reserved.

Summer diet of two sympatric species of raptors Upland Buzzard (Buteo hemilasius) and Eurasian Eagle Owl (Bubo bubo) in alpine meadow: problem of coexistence

Summer diets of two sympatric raptors Upland Buzzards (Buteo hemilasius Temminck et Schlegel) and Eurasian Eagle Owls (Bubo bubo L. subsp. Hemachalana Hume) were studied in an alpine meadow (3250 m a.s.l.) on Qinghai-Tibet Plateau, China. Root voles Microtus oeconomus Pallas, plateau pikas Ochotona curzoniae Hodgson, Gansu pikas O. cansus Lyon and plateau zokors Myospalax baileyi Thomas were the main diet components of Upland Buzzards as identified through the pellets analysis with the frequency of 57, 20, 19 and 4%, respectively. The four rodent species also were the main diet components of Eurasian Eagle Owls basing on the pellets and prey leftovers analysis with the frequency of 53, 26, 13 and 5%, respectively. The food niche breadth indexes of Upland Buzzards and Eurasian Eagle Owls were 1.60 and 1.77 respectively (higher value of the index means the food niche of the raptor is broader), and the diet overlap index of the two raptors was larger (C-ue = 0.90) (the index range from 0 - no overlap - to I - complete overlap). It means that the diets of Upland Buzzards and Eurasian Eagle Owls were similar (Two Related Samples Test, Z = -0.752, P = 0.452). The classical resource partitioning theory can not explain the coexistence of Upland Buzzards and Eurasian Eagle Owls in alpine meadows of Qinghai-Tibet Plateau. However, differences in body size, predation mode and activity rhythm between Upland Buzzards and Eurasian Eagle Owls may explain the coexistence of these two sympatric raptors.

Karyotypic conservatism in the suborder Feliformia (Order Carnivora)

Multidirectional comparative chromosome painting was used to investigate the karyotypic relationships among representative species from three Feliformia families of the order Carnivora ( Viverridae, Hyaenidae and Felidae). Complete sets of painting probes derived from flow-sorted chromosomes of the domestic dog, American mink, and human were hybridized onto metaphases of the spotted hyena (Crocuta crocuta, 2n = 40) and masked palm civet (Paguma larvata, 2n = 44). Extensive chromosomal conservation is evident in these two species when compared with the cat karyotype, and only a few events of chromosome fusion, fission and inversion differentiate the karyotypes of these Feliformia species. The comparative chromosome painting data have enabled the integration of the hyena and palm civet chromosomes into the previously established comparative map among the domestic cat, domestic dog, American mink and human and improved our understanding on the karyotype phylogeny of Feliformia species. Copyright (C) 2005 S. Karger AG, Basel.

Distribution of CCR2-64I and SDF1-3 ' A alleles and HIV status in 7 ethnic populations of Cameroon

Limited information is available on the prevalence among rural Africans of host genetic polymorphisms conferring resistance to HIV-1 infection or slowing HIV disease progression.We report the allelic frequencies of the AIDS-related polymorphisms CCR2-64I, SDF1-3#A, and CCR5-D32 in 321 volunteers from 7 ethnic groups in Cameroon. Allelic frequencies differed among the 7 ethnic groups, ranging from 10.8% to 31.3% for CCR2-64I and 0.0% to 7.1% for SDF1-3#A. No CCR5-D32 alleles were found. HIV seroprevalence was 6.9% in the total population and peaked at younger ages in girls and women than in boys and men. Among 15- to 54-year-olds, HIV seroprevalence varied from 2.0% to 11.1% among the village populations. Conditional logistic regression analysis using data from boys and men aged 15 to 54 years showed the number of CCR2-64I alleles to be a significant risk factor for HIV seropositivity (odds ratio per allele adjusted for age and matched on ethnic group = 6.3, 95% confidence interval: 1.3–30.3); this association was not found in women. The findings are consistent with the hypothesis that CCR2-64I alleles may delay HIV disease progression without affecting susceptibility to infection among men. We did not observe this relation among women, and other factors, such as multiple pregnancies or maternal stressors (eg, breastfeeding), may have masked any protective effect of CCR2-64I alleles. Further study of this issue among women is warranted. SDF1-3#A did not differ between HIV-seropositive and HIV-seronegative individuals but wasassociated with increasing age among HIV-seronegative women, suggesting a protective effect against HIV-1 infection.

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

A micromachined SiO2/silicon probe for neural signal recordings

The development of an implantable five channel microelectrode array is presented for neural signal recordings. The detailed fabrication process is outlined with four masked used. The SEM images show that the probe shank is 1.2mm long, 100 mu m wide and 30 mu m thick with the recording sites spaced 200 mu m apart for good signal isolation. The plot of the single recording site impedance versus frequency is shown by test in vitro and the ompedence declines with the increasing frequency. Experiment in vivo using this probe is under way.

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE

Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs multiple quantum wells (MQWs) has been successfully performed on patterned InP substrates by ultra-low pressure MOVPE. Flat and clear interfaces were obtained for the narrow stripe selectively grown MQWs under optimized growth conditions. These selectively grown MQWs were covered by specific InP layers, which can keep the MQWs from being oxidized during the fabrication of the devices. The characteristics of selectively grown MQWs were strongly dependent on the mask stripe width. In particular, a PL peak wavelength shift of 73 nm, a PL intensity of more than 57% and a PL FWHM of less than 102 meV were observed simultaneously with a small mask stripe width varying from 0 to 40 mu m. The results were explained by considering the migration effect from the masked region (MMR) and the lateral vapour diffusion effect (LVD).

AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs

We have performed a narrow stripe selective growth of oxide-free A1GaInAs waveguides on InP substrates patterned with pairs of SiO2 mask stripes under optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed at 1.5, 2.5 or 3.5 mu m. Flat and smooth A1GaInAs waveguides covered by specific InP layers are successfully grown on substrates patterned with different mask designs. The thickness enhancement ratio and the photoluminescence (PL) spectrum of the A1GaInAs narrow stripe waveguides are strongly dependent on the mask stripe width and the window region width. In particular, a large PL wavelength shift of 79 nm and a PL FWHM of less than 64 meV are obtained simultaneously with a small mask stripe width varying from 0 to 40 mu m when the window region width is 1.5 mu m. We present some possible interpretations of the experimental observations in considering both the migration effect from a masked region and the lateral vapour diffusion effect.

Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE

Oxide-free InGaAlAs waveguides have been grown on the InP substrates patterned with pairs of SiO2 mask stripes using narrow stripe selective MOVPE. The mask stripe width is varied from 0 to 40 pm, while the window region width between a pair of mask stripes is fixed at 1.5, 2.5 and 3.5 mu m, respectively. Smooth surface s and flat interfaces are obtained in the selectively grown InQaAlAs waveguides. There exhibit strong dependences of the thickness enhancement ratio and the photoluminescence (PL) spectrum on the mask stripe width and the window region width for the InGaAlAs wavegwdes. A large PL peak wavelength shift of 79 nm and a PL full width of at half maximum (FWHM) of less than 64 meV are obtained simultaneously. Some possible interpretations for our investigations are presented by considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE

Growth mechanism of InGaAlAs waveguides by narrow stripe selective MOVPE has been studied. Both the InGaAlAs bulk waveguides and the InGaAlAs MQW waveguides were successful grown on the patterned substrates at optimized growth conditions. The mask stripe width varied from 0 to 40 mu m, while the window region width between a pair of mask stripes was fixed 2.5 mu m. These selectively grown waveguides were covered by specific InP layers, which can keep the InGaAlAs waveguides from being oxidized during the fabrication of devices. In particular, there exhibit strong dependences of the photoluminescence (PL) spectrum on the mask stripe width for the samples. The results were explained in considering both the migration effect from a masked region (MMR) and the lateral vapor diffusion effect (LVD).

Narrow stripe selective growth of InGaAlAs waveguides used for buried heterostructure lasers - art. no. 63210I

The narrow stripe selective growth of the InGaAlAs bulk waveguides and InGaAlAs MQW waveguides was first investigated. Flat and clear interfaces were obtained for the selectively grown InGaAlAs waveguides under optimized growth conditions. These selectively grown InGaAlAs waveguides were covered by specific InP layers, which can keep the waveguides from being oxidized during the fabrication of devices. PL peak wavelength shifts of 70 nm for the InGaAlAs bulk waveguides and 73 nm for the InGaAlAs MQW waveguides were obtained with a small mask stripe width varying from 0 to 40 gm, and were interpreted in considering both the migration effect from the masked region (MMR) and the lateral vapor diffusion effect (LVD). The quality of the selectively grown InGaAlAs MQW waveguides was confirmed by the PL peak intensity and the PL FWHM. Using the narrow stripe selectively grown InGaAlAs MQW waveguides, then the buried heterostructure (BH) lasers were fabricated by a developed unselective regrowth method, instead of conventional selective regrowth. The InGaAlAs MQW BH lasers exhibit good performance characteristics, with a high internal differential quantum efficiency of about 85% and an internal loss of 6.7 cm(-1).

语义Web规则标记语言OWLRule+的设计与实现

语义Web是对未来Web体系结构的一个伟大设想 ,其研究分层次进行 目前足够成熟的最高层是以OWL语言为代表的ontology层 但它的语义仅限于描述逻辑 ,该逻辑主要表示对象和类的层次结构 ,而规则的表达能力弱 因此在其之上需要一种表达力更丰富的逻辑语言 设计了一种新的语义Web规则标记语言OWLRule+:其语法扩展了OWL ;语义基于CARIN ,一种结合描述逻辑和Horn规则的表示语言 ;实现基于Jess规则推理机 实例学习展示了它对目前的Webontology语言在规则表示和推理能力上的扩展

语义Web服务匹配与发现技术研究

在开放的互联网环境中，面向服务的计算（Service-Oriented Computing, SOC）和面向服务的体系架构（Service-Oriented Architecture, SOA）使得信息资源和软件系统的主要形态发生了巨大变化，并引领着互联网计算技术和软件系统新的发展方向。服务是SOC和SOA的核心思想，服务的平台独立、高可重用和松散耦合等特性使之成为复杂分布式应用可行的解决方案。Web服务的出现和发展为实施与部署SOC和SOA提供了最佳支撑技术。目前web服务发现机制在服务描述的全面性和服务匹配方法的有效性方面存在不足之处，难以保证服务发现的性能。特别是在服务数量剧增的情况下，用户亟需一种自动快速而准确的服务发现机制。语义web技术不仅为web的表示内容提供了一种语义标识方法，推动了web内容的自动化和智能化搜索，也为web服务的描述提供了增加语义层次内容的有效方法，两者的结合形成了一个新的研究领域——语义web服务。该领域通过借鉴语义web的相关技术来增加web服务的语义描述，进而为web服务的发现、组合、调用和监控等环节提供语义层次的支持，增强web服务的自动化和智能化水平。 本文的研究目的就是利用语义web的思想，基于SOC和SOA的理念以及现有的web服务发现机制对web服务信息进行语义描述、组织，探索语义web服务匹配与发现的关键问题，提出有效的解决方案。本文的研究工作和贡献主要在以下四个方面： 1. 针对语义近似度的度量和计算问题基于OWL（Web Ontology Language）提出了一个语义近似度计算SSM模型，该模型中所有概念及概念之间的关系、所有的概念属性及属性之间的关系都被抽象定义并建模，根据概念、属性及其语义关系模型，构建了基于概念关系的拓扑近似度计算函数和属性近似度计算函数，从而进一步构建语义近似度计算函数。该语义近似度计算函数以代表OWL本体概念上下级关系和等价关系的树状结构为基础，利用概念间的拓扑关系和属性关系进行语义近似度的度量和计算。语义近似度函数的返回值为一个介于0与1之间的数值，代表函数的两个输入概念之间的语义近似度值。 2. 提出了一个基于概念语义近似度的以OWL-S为顶层本体的web服务语义匹配PSM模型。该模型将服务的匹配项分为服务能力、服务质量、服务名称和服务参数四个部分。基于该模型，提出了相应的PSM服务匹配算法。PSM算法能够对服务内部的服务流程及流程的组合进行与服务请求的语义匹配，并且避免了服务流程中互斥接口参数参与匹配。而且PSM匹配算法实现了服务接口的单射匹配，进一步提高服务发现的性能。在服务质量匹配计算上，提出了服务质量匹配模型PSM-QoS，为服务的QoS匹配建立了计算基础。PSM算法使用语义近似度计算函数度量和计算服务属性概念的语义近似度值，从而能够返回细粒度的服务匹配度值。 3. 在语义服务匹配PSM模型的基础上提出一种语义web服务发现架构系统PSM-SD模型。该模型将OWL-S语义元素引入UDDI服务描述，从而在UDDI中保存语义信息。通过PSM算法提高web服务匹配性能，并通过数据映射机制保证模型对于当前的服务发现标准UDDI基础架构的兼容以及UDDI标准操作接口的透明性。模型使用本体概念的索引机制提高服务发现的效率。在建立和维护索引的过程或服务的匹配过程中，模型使用近似概念搜寻算法进一步提高本体概念搜寻和服务匹配的效率。 4. 设计并开发了基于语义web服务发现架构模型的原型系统。该系统将语义近似度计算模型、语义web服务匹配模型和语义web服务发现架构模型进行软件实现。本文在该原型系统平台上对语义web服务发现的方法进行了实验，验证了方法的有效性。