Study on the structure of C-phycocyanin in Spirulina platensis with scanning tunneling microscope

The C-phycocyanin (C-PC) trimmer was isolated from the blue-green alga Spirulina platensis, and scanning tunnelling microscope (STM) was used to investigate its structure, High resolution STM images of C-PC were obtained. From the STM images, it could be observed that the C-PC molecules were disk-like in shape and the subunits of C-PC arranged in ring-like pattern with a channel in the center. After filter treatment, the folding of the polypeptide chains could be. seen clearly. This is the first time to observe directly the topography of phycobiliprotein, and the results showed STM to be a powerful tool for the structural study of phycobiliproteins.

High-performance 1.55 mu m low-temperature-grown GaAs resonant-cavity-enhanced photodetector

A 1.55 mu m low-temperature-grown GaAs (LT-GaAs) photodetector with a resonant-cavityenhanced structure was designed and fabricated. A LT-GaAs layer grown at 200 degrees C was used as the absorption layer. Twenty- and fifteen-pair GaAs/AlAs-distributed Bragg reflectors were grown as the bottom and top mirrors. A responsivity of 7.1 mA/W with a full width at half maximum of 4 nm was obtained at 1.61 mu m. The dark current densities are 1.28x10(-7) A/cm(2) at the bias of 0 V and 3.5x10(-5) A/cm(2) at the reverse bias of 4.0 V. The transient response measurement showed that the photocarrier lifetime in LT-GaAs is 220 fs. (c) 2006 American Institute of Physics.

Structure and optical properties of upper In(Ga)As quantum dots on a different seed layer with a thin GaAs spacer layer

The structure and optical properties of In(Ga)As grown with the introduction of InGaAlAs or InAlAs seed dots layers are investigated. The area density and size homogeneity of the upper InGaAs dots are efficiently improved with the introduction of a layer of high-density buried dots. When the GaAs spacer layer is too thin to cover the seed dots, the upper dots exhibit the characterization of a quantum well. By analyzing the growth dynamics, we refer to it as an empty-core structure dot. (C) 2002 Elsevier Science B.V. All rights reserved.

Effect of dead carbon on the C-14 dating of the speleothem

IEECAS SKLLQG

Synthesis, structure and properties of alpha-Keggin-type of K6H3[ZnW11O40Al]center dot 9.5H(2)O

A new heteropolycomplex, K6H3[ZnW11O40Al] . 9.5H(2)O was prepared and characterized by means of elemental analysis, IR, UV spectroscopy, Al-27 NMR, electrochemistry and X-ray crystallography. The crystal of K6H3[ZnW11O40Al] . 9.5H(2)O is cubic, space group Fm-3m, with lattice constants a=b=c=2. 144 8(2) nm, V = 9.866(2) nm(3), Mo radiation, R = 0.057 8 for 497 independent data with [I>2 delta(I)]. The anion is of alpha-type Keggin structure with C-s symmetry.

Synthesis, structure and properties of undecatungstozincate containing 3A elements

New compounds KaHb[ZnW11O39M(H2O)]. xH(2)O (M = Al, Ga or In) were prepared and characterized by elemental analysis, IR and UV and Al-27 NMR spectroscopy, electrochemistry and X-ray crystallography. In the crystals of K6H3[ZnW11AlO40]. 9.5H(2)O, the anion is of the alpha-type Keggin structure with C-s symmetry. The Al and W atoms are statistically distributed in the crystal. (C) 1997 Elsevier Science Ltd.

Mechanics of adhesive contact on a power-law graded elastic half-space

We consider adhesive contact between a rigid sphere of radius R and a graded elastic half-space with Young's modulus varying with depth according to a power law E = E-0(z/c(0))(k) (0 < k < 1) while Poisson's ratio v remaining a constant. Closed-form analytical solutions are established for the critical force, the critical radius of contact area and the critical interfacial stress at pull-off. We highlight that the pull-off force has a simple solution of P-cr= -(k+3)pi R Delta gamma/2 where Delta gamma is the work of adhesion and make further discussions with respect to three interesting limits: the classical JKR solution when k = 0, the Gibson solid when k --> 1 and v = 0.5, and the strength limit in which the interfacial stress reaches the theoretical strength of adhesion at pull-off. (C) 2009 Elsevier Ltd. All rights reserved.

Research on a scanner for tilting orthogonal double prisms

The original scanner for tilting orthogonal double prisms is studied to test the tracking performance in intersatellite laser communications. With a reduction ratio of more than 100 times from the change rate of the angle of beam deviation to that of the tilting angle of each prism, the theoretical analysis performed, as well as the verification experiment, indicates that the scanner can meet the requirements of the scanning accuracy superior to 0.5 mu rad with the scanning range greater than 500 mu rad and can facilitate the mechanical structure design. (c) 2006 Optical Society of America.

Isolation and characterization of polymorphic microsatellites in a Yangtze River fish, brass gudgeon (Coreius heterodon Bleeker)

The brass gudgeon (Coreius heterodon) is a fish of economic importance in the Yangtze River. From a (GATA)(n)-enriched genomic library, 25 microsatellites were developed by employing the fast isolation by AFLP of sequences containing repeats (FIASCO) protocol. Nine loci exhibited polymorphism with two to 12 alleles (mean 3.9 alleles/locus) in a test population, and observed heterozygosity ranged from 0.1111 to 0.9630 (mean 0.4426). Three of the nine loci showed polymorphism in a congeneric species, the largemouth bronze gudgeon Coreius guichenoti. These loci should provide sufficient level of genetic diversity to evaluate the fine-scale population structure of C. heterodon.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Electrical control of dynamic spin splitting induced by exchange interaction as revealed by time-resolved Kerr rotation in a degenerate spin-polarized electron gas

Manipulation of the spin degree of freedom has been demonstrated in a spin-polarized electron plasma in a heterostructure by using exchange-interaction-induced dynamic spin splitting rather than the Rashba and Dresselhaus types, as revealed by time-resolved Kerr rotation. The measured spin splitting increases from 0.256 meV to 0.559 meV as the bias varies from -0.3 V to -0.6 V. Both the sign switch of the Kerr signal and the phase reversal of Larmor precessions have been observed with biases, which all fit into the framework of exchange-interaction-induced spin splitting. The electrical control of it may provide a new effective scheme for manipulating spin-selected transport in spin FET-like devices. Copyright (C) EPLA, 2008.

Spin dynamics in the second subband of a quasi-two-dimensional system studied in a single-barrier heterostructure by time-resolved Kerr rotation

Spin dynamics in the first and second subbands have been examined simultaneously by time resolved Kerr rotation in a single-barrier heterostructure of a 500 nm thick GaAs absorption layer. By scanning the wavelengths of the probe and pump beams towards the short wavelength in the zero magnetic field, the spin coherent time T-2(1)* in the 1st subband E-1 decreases in accordance with the D'yakonov-Perel' (DP) spin decoherence mechanism. Meanwhile, the spin coherence time T-2(2)* in the 2nd subband E-2 remains very low at wavelengths longer than 810 nm, and then is dramatically enhanced afterwards. At 803 nm, T-2(2)* (450 ps) becomes ten times longer than T-2(1)* (50 ps). A new feature has been discovered at the wavelength of 811nm under the bias of -0.3V (807nm under the bias of -0.6V) that the spin coherence times (T-2(1)* and T-2(2)*) and the effective g* factors (vertical bar g*(E-1)vertical bar and vertical bar g*(E-2)vertical bar) all display a sudden change, presumably due to the "resonant" spin exchange coupling between two spin opposite bands. Copyright (C) EPLA, 2008.

Single-photon source in strong photon-atom interaction regime in quasiperiodic photonic crystals

The antibunching properties of the fluorescence from a two-level ideal system in a 12-fold quasiperiodic photonic crystal are investigated based on the calculated local density of states. We found that the antibunching phenomenon of the fluorescence from two-level ideal systems could be significantly changed by varying their positions, i.e., perfect antibunching and antibunching with damped Rabi oscillation phenomenon occurred in different positions and at different frequencies in photonic crystals as a result of the large differences in the local density of states. This study revealed that the multi-level coherence of fluorescence from a two-level ideal system could be manipulated by controlling the position of the two-level ideal system in photonic crystals and the emission frequency in the photonic band structure. Copyright (C) EPLA, 2008

First principle study of Mg, Si and Mn co-doped GaN

Calculations of electronic structures and optical properties of Mg (or Si) and Mn co-doped GaN were carried out by means of first-principle plane-wave pesudopotential (PWP) based on density functional theory - The spin polarized impurity bands of deep energy levels were found for both systems. They are half metallic and suitable for spin injectors. Compared with GaN Mn, GaN Mn-Mg exhibits a significant increase in T-C 1 while the 1.3 eV absorption peak in GaN Mn disappears due to addition of Mg. In addition, a strong absorption peak due to T-4(1) (F) -> T-4(2) (F) transition of Mn4+ were observed near 1.1 eV. Nevertheless, GaN Mn-Si failed to show increase of T-C, and the absorption peak was not observed at the low energy side.

Electron spin relaxation by nuclei and holes in single InAs quantum dots

Electron spin relaxation of charged excitons X+ and X2+ are investigated by time-resolved and polarization-resolved photoluminescence spectroscopy. For X+ configuration, the electron spin relaxation shows a typical decay curve induced by hyperfine interaction with nuclei, whereas for X2+ state the electron spin relaxation is affected not only by nuclei but also by electron-hole exchange interaction, leading to a power-law time dependence.