Control of self-organized low-dimensional morphology in Poly(styrene-b-4vinylpyridine)/polystyrene blend thin films

The surface morphologies of poly(styrene-b-4vinylpyridine) (PS-b-P4VP) diblock copolymer and homopolystyrene (hPS) binary blend thin films were investigated by atomic force microscopy as a function of total volume fraction of PS (phi(PS)) in the mixture. It was found that when hPS was added into symmetric PS-b-P4VP diblock copolymers, the surface morphology of this diblock copolymer was changed to a certain degree. With phi(PS) increasing at first, hPS was solubilized into the corresponding domains of block copolymer and formed cylinders. Moreover, the more solubilized the hPS, the more cylinders exist. However, when the limit was reached, excessive hPS tended to separate from the domains independently instead of solubilizing into the corresponding domains any longer, that is, a macrophase separation occurred. A model describing transitions of these morphologies with an increase in phi(PS) is proposed. The effect of composition on the phase morphology of blend films when graphite is used as a substrate is also investigated.

Optimized Group Velocity Control Scheme and DNS of Decaying Compressible Turbulence of Relative High Turbulent Mach Number

To overcome the difficulty in the DNS of compressible turbulence at high turbulent Mach number, a new difference scheme called GVC8 is developed. We have succeeded in the direct numerical simulation of decaying compressible turbulence up to turbulent Mach number 0.95. The statistical quantities thus obtained at lower turbulent Mach number agree well with those from previous authors with the same initial conditions, but they are limited to simulate at lower turbulent Mach numbers due to the so-called start-up problem. The energy spectrum and coherent structure of compressible turbulent flow are analysed. The scaling law of compressible turbulence is studied. The computed results indicate that the extended self-similarity holds in decaying compressible turbulence despite the occurrence of shocklets, and compressibility has little effects on relative scaling exponents when turbulent Mach number is not very high.

Electrochemical, spectroscopic and SPM evidence for the controlled formation of self-assembled monolayers and organised multilayers of ferrocenyl alkyl thiols on Au(111)

Organised multilayers were formed from the controlled self-assembly of ferrocene alkyl thiols on Au(111) surfaces. The control was accomplished by increasing the concentration of the thiol solutions used for the assembly. Cyclic voltammetry, ellipsometry, scanning probe microscopy (STM and AFM) and in situ FTIR spectroscopy were used to probe the differences between mono- and multilayers of the same compounds. Electrochemical desorption studies confirmed that the multilayer structure is attached to the surface via one monolayer. The electrochemical behaviour of the multilayers indicated the presence of more than one controlling factor during the oxidation step, whereas the reduction was kinetically controlled which contrasts with the behaviour of monolayers, which exhibit kinetic control for the oxidation and reduction steps. Conventional and imaging ellipsometry confirmed that multilayers with well-defined increments in thickness could be produced. However, STM indicated that at the monolayer stage, the thiols used promote the mobility of Au atoms on the surface. It is very likely that the multilayer structure is held together through hydrogen bonding. To the best of out knowledge, this is the first example of a controlled one-step growth of multilayers of ferrocenyl alkyl thiols using self-assembly techniques.

Spectral analysis and control to obtain sub-5 fs pulses by femtosecond filamentation

A spectral-filter method is numerically demonstrated to obtain sub-5 fs pulses by using femtosecond filamentation in fused silica. Instead of employing spectral phase compensation, by properly employing a high-pass filter to select the broadened high-frequency spectra that are located almost in phase in the tailing edge of the self-compressed pulses owing to self-steepening, as short as single-cycle pulses can be obtained. For instance, for an input pulse with a duration of 50 fs and energy 2.2 mu J, the minimum pulse duration can reach to similar to 4 fs (about 1.5 cycles) by applying a proper spectral filter. (C) 2008 Optical Society of America

Filamentation control in the temperature gradient argon gas

A novel technique of controlling the evolution of the filamentation was experimentally demonstrated in an argon gas-filled tube. The entrance of the filament was heated by a furnace and the other end was cooled with air, which resulted in the temperature gradient distribution along the tube. The experimental results show that multiple filaments are merged into a single filament and then no filament by only increasing the temperature at the entrance of the filament. Also, the filament can appear and disappear after increasing the local temperature and input pulse energy in turn. This technique offers another degree of freedom to control the filamentation and opens a new way for multi-mJ level monocycle pulse generation through filamentation in the noble gas.

Optimization of single attosecond x-ray pulses by genetic algorithm control of the chirp and initial phase of 5 fs laser pulses

We show that the peak intensity of single attosecond x-ray pulses is enhanced by 1 or 2 orders of magnitude, the pulse duration is greatly compressed, and the optimal propagation distance is shortened by genetic algorithm optimization of the chirp and initial phase of 5 fs laser pulses. However, as the laser intensity increases, more efficient nonadiabatic self-phase matching can lead to a dramatically enhanced harmonic yield, and the efficiency of optimization decreases in the enhancement and compression of the generated attosecond pulses. (c) 2006 Optical Society of America.

Control of filamentation induced by femtosecond laser pulses propagating in air

Filamentation formed by self-focusing of intense laser pulses propagating in air is investigated. It is found that the position of filamentation can be controlled continuously by changing the laser power and divergence angle of the laser beam. An analytical model for the process is given.

Electromagnetically induced self-imaging

We study the self-imaging and image-transforming properties of a probe field in a cold atomic medium with electromagnetically induced transparency (EIT). Due to the similarities between the gradient-index medium and the inhomogeneous index distribution of an EIT medium under the conditions of a negative probe detuning and a Gaussian control field, we find based on analytical investigations that there exists a kind of electromagnetically induced self-imaging phenomenon in cold atomic media. Numerical simulations clearly show that electromagnetically induced self-imaging is observable and controllable. (c) 2007 Optical Society of America.

Size self-scaling effect in stacked InAs/InAlAs nanowire multilayers

Size self-scaling effect in stacked InAs/In0.52Al0.48As nanowires on InP substrates is revealed, i.e., the base width and height of the InAs nanowires have clear proportional dependence on thickness of the InAlAs spacer layer used in different samples. The photoluminescence wavelength from different samples, which varies between 1.3 and 1.9 mum, is also found closely correlated to the size self-scaling effect. This phenomenon can be well explained in the context of formation mechanism and growth features of the InAs/InAlAs nanowire arrays. The finding illustrates a degree of freedom to control the structural and optical properties of strained self-organized nanostructures. (C) 2004 American Institute of Physics.

Formation of self-assembly and the mechanism of Si nanoquantum dots prepared by low pressure chemical vapor deposition

Si nanoquantum dots have been formed by self-assembled growth on the both Si-O-Si and Si-OH bonds terminated SiO2 surfaces using the low-pressure chemical vapor deposition (LPCVD) and surface thermal decomposition of pure SiH4 gas. We have experimentally studied the variation of Si. dot density with Si-OH bonds density, deposition temperature and SiH4 pressure, and analyzed qualitatively the formation mechanism of the Si nanoquantum dots based on LPCVD surface thermal dynamics principle. The results are very. important for the control of the density and size of Si nanoquantum dots, and have potential applications in the new quantum devices.

Continuous weak measurement and feedback control of a solid-state charge qubit: A physical unravelling of non-Lindblad master equation

Conventional quantum trajectory theory developed in quantum optics is largely based on the physical unravelling of a Lindblad-type master equation, which constitutes the theoretical basis of continuous quantum measurement and feedback control. In this work, in the context of continuous quantum measurement and feedback control of a solid-state charge qubit, we present a physical unravelling scheme of a non-Lindblad-type master equation. Self-consistency and numerical efficiency are well demonstrated. In particular, the control effect is manifested in the detector noise spectrum, and the effect of measurement voltage is discussed.

Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs

We have carried out a theoretical study of double-delta-doped InAlAs/InGaAs/InP high electron mobility transistor (HEMT) by means of the finite differential method. The electronic states in the quantum well of the HEMT are calculated self-consistently. Instead of boundary conditions, initial conditions are used to solve the Poisson equation. The concentration of two-dimensional electron gas (2DEG) and its distribution in the HEMT have been obtained. By changing the doping density of upper and lower impurity layers we find that the 2DEG concentration confined in the channel is greatly affected by these two doping layers. But the electrons depleted by the Schottky contact are hardly affected by the lower impurity layer. It is only related to the doping density of upper impurity layer. This means that we can deal with the doping concentrations of the two impurity layers and optimize them separately. Considering the sheet concentration and the mobility of the electrons in the channel, the optimized doping densities are found to be 5 x 10(12) and 3 x 10(12) cm(-2) for the upper and lower impurity layers, respectively, in the double-delta-doped InAlAs/InGaAs/InP HEMTs.

Shape and spatial correlation control of InAs-InAlAs-InP(001) nanostructure superlattices

The control of shape and spatial correlation of InAs-InAlAs-InP(001) nanostructure superlattices has been realized by changing the As overpressure during the molecular-beam epitaxy (MBE) growth of InAs layers. InAs quantum wires (QWRs) are obtained under higher As overpressure (1x10(-5) Torr), while elongated InAs quantum dots (QDs) are formed under lower As overpressure (5x10(-6) or 2.5x10(-6) Torr). Correspondingly, spatial correlation changes from vertical anti-correlation in QWR superlattices to vertical correlation in QD superlattices, which is well explained by the different alloy phase separation in InAlAs spacer layers triggered by the InAs nanostrcutures. It was observed that the alloy phase separation in QD superlattices could extend a long distance along the growth direction, indicating the vertical correlation of QD superlattices can be kept in a wide range of spacer layer thickness.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.

New way to enhance the uniformity of self-organized InAs quantum dots

Growth interruption was introduced after the deposition of GaAs cap layer, which is thinner than the mean height of Quantum dots. Uniformity of quantum dots has been enhanced because the full width of half maximum of photoluminescence decrease from 80meV to 27meV in these samples as the interruption time increasing from 0 to 120 second. Meanwhile, we have observed that the peak position of photoluminescence is a function of interruption time. This effect can be used to control the energy level of quantum dots. The phenomena mentioned above can be attributed to the diffusion of In atoms from the top of InAs islands to the top of GaAs cap layer caused by the difference of surface energies between InAs and GaAs.