光频锁相技术和SDH中2.048Mbit/s支路信号影射的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

不同葡萄糖/果糖类型桃果实发育期间可溶性糖的变化规律和代谢

以成熟果实中不同葡萄糖/果糖（G/F）类型的6个桃品种（G/F≈1品种：‘冈山白’、‘山一白桃’和‘燕红’;高G/F品种：‘张黄7号’、‘龙246’和‘临白7号’）为试材，采用高效液相色谱法测定果实发育期果实和叶片中可溶性糖含量，并在盛花后74 d或101 d测定了‘冈山白’、‘山一白桃’、‘张黄 7号’和‘龙 246’新梢韧皮部中可溶性糖的含量;测定了果实发育过程中‘山一白桃’和‘临白7号’果实中的可溶性糖和淀粉代谢相关酶的活性。研究成熟果实中不同G/F类型桃果实内G/F差异的部位和时期;分析桃果实内G/F差异的可溶性糖代谢调控机理。 成熟果实中不同G/F类型桃果实中均以蔗糖作为主要碳水化合物积累形式，花后43–85 d蔗糖含量很低，随后持续快速积累直至果实成熟;花后43–85 d山梨醇有升高趋势，在果实成熟前40 d左右迅速降低;葡萄糖和果糖含量在果实发育早期较高，之后逐渐降低;但两类不同G/F桃在整个果实发育过程中G/F值与果实成熟时相似。叶片中贮藏的可溶性糖主要是蔗糖和山梨醇，在果实整个发育期间，G/F≈1品种叶片中G/F约1-3，而高G/F品种叶片中G/F约为2-7。G/F≈1品种‘冈山白’和‘山一白桃’与高G/F品种‘张黄 7号’和‘龙 246’韧皮部中山梨醇占总可溶性糖47-63％，显著高于蔗糖、葡萄糖和果糖的含量，G/F为0.8-0.91，且两类不同G/F桃品种间G/F值不存在显著差异。 成熟果实中G/F≈1类型的‘山一白桃’和高G/F值类型的‘临白7号’整个果实发育过程中，葡萄糖、山梨醇和淀粉的含量在这两个品种间一般没有明显差异;‘山一白桃’果实中的果糖含量显著高于‘临白7号’果实中的果糖;果实最后迅速生长期，‘山一白桃’果实中的蔗糖明显高于‘临白7号’。‘山一白桃’和‘临白7号’果实中的NAD+依赖型山梨醇脱氢酶（NAD+-SDH）活性低，两者有相似的变化趋势，一般无显著差异。‘临白7号’果实中的NADP+依赖型山梨醇脱氢酶（NADP+-SDH）和山梨醇氧化酶（SOX）活性一直高于‘山一白桃’，两者NADP+-SDH和SOX的活性分别在花后93-123 d和花后43-93 d有显著差异。‘临白7号’果实中的果糖激酶（FK）活性一般高于‘山一白桃’。花后43-93 d，‘临白7号’果实中的磷酸蔗糖合成酶（SPS）和蔗糖合成酶（SS）活性一般显著‘山一白桃’。果实最后迅速生长期，蔗糖快速积累，葡萄糖、果糖、山梨醇和淀粉含量迅速降低，同时伴随有SPS和SS活性的迅速升高。在整个果实发育过程中，两个品种果实中的淀粉酶活性较高，其果实中的淀粉含量和淀粉酶活性都有明显的下降趋势。 研究结果表明，整个果实发育过程中桃果实中均存在G/F≈1和高G/F现象，光合产物在韧皮部的运输对桃果实的G/F没有显著的影响，果实中G/F的差异主要由于果实内糖代谢差异所导致。‘临白7号’果实中山梨醇向果糖方向的转化能力与‘山一白桃’一般没有显著差异，由于不同时期较高的NADP+-SDH和SOX活性，使得山梨醇向葡萄糖方向的转化能力明显高于‘山一白桃’，同时，‘临白7号’果实中的FK活性一般高于‘山一白桃’，因此导致‘临白7号’果实中G/F高于‘山一白桃’。

桃不同组织中的葡萄糖/果糖比值特点及己糖代谢

以不同葡萄糖/果糖（G/F）类型的桃品种（正常G/F 品种：‘燕红’、‘冈山白’和‘山一白桃’；高G/F 品种：‘龙124’、‘龙246’、‘张黄7 号’和‘临白7 号’）为试材，测定果实发育期果实、叶片、韧皮部和木质部中糖和淀粉含量，并分别在果实第一迅速生长期、硬核期和成熟期测定了‘燕红’、‘山一白桃’、‘龙124’、‘龙 246’和‘临白7号’果实和叶片中己糖相关酶。研究不同G/F类型桃品种产生G/F差异的组织器官和时期，并且分析相关代谢酶调控机理。 两类不同G/F 桃果实中均以蔗糖作为主要碳水化合物积累形式，花后70 d前蔗糖含量很低，随后快速积累直至果实成熟；山梨醇含量较为稳定，高G/F品种‘龙124’两年间在未成熟果实中山梨醇含量高于正常 G/F品种；葡萄糖和果糖含量在果实第一迅速生长期积累，之后逐渐降低。高 G/F 品种‘龙124’和‘临白7号’成熟果实中葡萄糖含量高于‘龙246’和正常 G/F 品种。正常G/F品种果实、叶片、韧皮部和木质部中葡萄糖和果糖含量基本相等，G/F基本保持在0.7-1.5。高G/F品种果实、叶片中葡萄糖显著高于果糖，果实中G/F在1.6-8.8，叶片中G/F在果实未成熟时为2.5-9.3，在果实成熟期为14.5-21.3。然而韧皮部和木质部中葡萄糖略高于果糖或基本相等，但较正常G/F品种高。因此，光合产物在韧皮部的运输对桃果实的G/F 没有显著影响。 在第一迅速生长期和成熟期时，所有供试桃品种果实和叶片中合成己糖的NAD+-SDH 和 SOX较为活跃，而分解己糖的FRK、GLK和PGI则保持在较低水平；在果核硬化期则相反，果实和叶片中合成己糖的NAD+-SDH 和 SOX活性较低，而分解己糖的FRK、GLK和PGI则较为活跃。高G/F品种‘龙124’和‘龙246’在果核硬化期果实中的FRK、NADP+-SDH 和GLK活性显著高于正常G/F品种，而高G/F品种‘临白7号’则与正常G/F品种没有明显差异。可见，高G/F品种间己糖代谢调控机制也有所差异。此外，叶片中两种G/F类型间的己糖代谢相关酶差异并无明显规律，由此我们认为叶片存在与果实类似但相对独立的调控机制。

白鲢个体发育过程中同工酶基因的表达与调控研究

采用淀粉或聚丙烯酸胺凝胶电泳及特异性组织化学染色技术研究了白鲢早期发育过程中（从未受精卵到卵黄吸尽期）及成体不同组织（脑、眼、心、肌、肾、肝）中六种同工酶系统（LDH，MDHIDHADHSDH，EST）的分化表达谱式。白鲢各同工酶基因的表达具有明显的组织特异性。早期发育过程中，ADH和SDH基因均无活性，其它四种同工酶则具有不同的个体发育谱式。值得一提的是，由取自同一地区的两对白鲢的受精卵的形成胚胎的LDH和EST同工酶的个体发育谱式具有明显的差异。这种差异很可能与不同白鲢母本的未受精卵中不同的同工酶组成

鳙鱼同工酶发育遗传学研究

采用淀粉或聚丙烯酰胺凝胶电泳法分析鳙鱼早期发育阶段(从未受精卵到卵黄吸尽期)及成体不同组织(脑、眼、心、肌、肾、肝)中六种同工酶(LDH,MDH,IDH,ADH,SDH,EST)的分化表达模式。鳙鱼同工酶基因的表达具有明显的组织特异性。早期发育阶段,ADH和SDH均无染色活性;LDH、MDH和IDH具有不同的发育变化谱式,而EST酶谱在整个早期发育阶段均无明显变化。与鲢、草鱼相比,鳙鱼早期发育过程中胚胎Ldh-A基因激活的时间被推迟。上述结果可为鳙鱼种群的生化遗传结构分析以及鳙鱼的人工育种提供基础资料。

In vivo studies on the toxic effects of microcystins on mitochondrial electron transport chain and ion regulation in liver and heart of rabbit

This study examined the toxic effects of microcystins on mitochondria of liver and heart of rabbit in vivo. Rabbits were injected i.p. with extracted microcystins (mainly MC-RR and -LR) at two doses, 12.5 and 50 MCLReq. mu g/kg bw, and the changes in mitochondria of liver and heart were studied at 1, 3,12, 24 and 48 h after injection. MCs induced damage of mitochondrial morphology and lipid peroxidation in both liver and heart. MCs influenced respiratory activity through inhibiting NADH dehydrogenase and enhancing succinate dehydrogenase (SDH). MCs altered Na+-K+-ATPase and Ca2+-Mg2+-ATPase activities of mitochondria and consequently disrupted ionic homeostasis, which might be partly responsible for the loss of mitochondrial membrane potential (MMP). MCs were highly toxic to mitochondria with more serious damage in liver than in heart. Damage of mitochondria showed reduction at 48 h in the low dose group, suggesting that the low dose of MCs might have stimulated a compensatory response in the rabbits. (C) 2008 Elsevier Inc. All rights reserved.

Magnetointersubband oscillations of the two-dimensional electron gas in AlxGa1-xN/GaN heterostructures

Shubmkov-de Haas (SdH) measurements are performed over a temperature range of 1.5-20K in AL(0.22)Ga(0.78)N/GaN heterostructures with two subbands occupied. In addition to an intermodulation between two sets of SdH oscillations from the first and second subbands, a beating in oscillatory magnetoresistance at 12K is observed, due to the mixing of the first subband SdH oscillations and 'magnetointersubband' (MIS) oscillations. A phase shift of pi between the SdH and MIS oscillations is also clearly identified. Our experimental results, i.e. that the SdH oscillations dominate at low temperature and MIS oscillations dominate at high temperature, fully comply with the expected behaviour of MIS oscillations.

Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well

We have observed the weak antilocalization (WAL) and beating SdH oscillation through magnetotransport measurements performed on a heavily delta-doped In0.52Al0.48As/In0.53Ga0.47As/In0.5Al0.48As single quantum well in an applied magnetic field up to 13 T and a temperature at 1.5 K. Both effects are caused by the strong Rashba spin-orbit (SO) coupling due to high structure inversion asymmetry (SIA). The Rashba SO coupling constant alpha and zerotield spin splitting Delta(0) are estimated and the obtained values are consistent from different analysis for this sample. (c) 2007 Elsevier Ltd. All rights reserved.

Weak anti-localization in InAlAs/InGaAs/InAlAs high mobility two-dimensional electron gas systems

Magneto-transport measurements have been carried out on three heavily Si delta-doped In-0.52 Al-0.48 As/In-0.53 Ga-0.47 As/In-0.52 A(10.48) As single quantum well samples in which two subbands were occupied by electrons. The weak anti-localization (WAL) has been found in such high electron mobility systems. The strong Rashba spin-orbit (SO) coupling is due to the high structure inversion asymmetry (SIA) of the quantum wells. Since the WAL theory model is so complicated in fitting our experimental results, we obtained the Rashba SO coupling constant alpha and the zero-field spin splitting Delta(0) by an approximate approach. The results are consistent with that obtained by the Shubnikov-de Haas (SdH) oscillation analysis. The WAL effect in high electron mobility system suggests that finding a useful approach for deducing alpha and Delta(0) is important in designing future spintronics devices that utilize the Rashba SO coupling.

Observations on subband electron properties in In0.65Ga0.35As/In0.52Al0.48As MM-HEMT with Si delta-doped on the barriers

Magneto-transport measurements have been carried out on a Si delta-doped In0.65Ga0.35As/In0.52Al0.48As metamorphic high-electron-mobility transistor with InP substrate in a temperature range between 1.5 and 60 K under magnetic field up to 13 T. We studied the Shubnikov-de Haas (SdH) effect and the Hall effect for the In0.65Ga0.35As/In0.52Al0.48As single quantum well occupied by two subbands and obtained the electron concentration and energy levels respectively. We solve the Schrodinger-Kohn-Sham equation in conjunction with the Poisson equation self-consistently and obtain the configuration of conduction band, the distribution of carriers concentration, the energy level of every subband and the Fermi energy. The calculational results are well consistent with the results of experiments. Both experimental and calculational results indicate that almost all of the delta-doped electrons transfer into the quantum well in the temperature range between 1.5 and 60 K.

Magneto-transport characteristics of two-dimensional electron gas for Si delta-doped InAlAs/InGaAs single quantum well

Magneto-transport measurements have been carried out on a Si heavily delta-doped In0.52Al0.48As/In(0.53)G(0.47)As single quantum well in the temperature range between 1.5 and 60 K under magnetic field up to 10 T. We studied the Shubnikov-de Haas(SdH) effect and the Hall effect for the In0.52Al0.48As/In(0.53)G(0.47)As single quantum well occupied by two subbands, and have obtained the electron concentration, mobility, effective mass and energy levels respectively. The electron concentrations of the two subbands derived from mobility spectrum combined with multi-carrier fitting analysis are well consistent with the result from the SdH oscillation. From fast Fourier transform analysis for d(2)rho/dB(2)-1/B, it is observed that there is a frequency of f(1)-f(2) insensitive to the temperature, besides the frequencies f(1), f(2) for the two subbands and the frequency doubling 2f(1), both dependent on the temperature. This is because That the electrons occupying the two different subbands almost have the same effective mass in the quantum well and the magneto-intersubband scattering between the two subbands is strong.

Study of persistent photoconductivity and subband electronic properties of the two-dimensional electron gas in modulation doped GaAs/AlGaAs structure

We obtained the high mobility Of mu(2K) = 1.78 x 10(6) cm(2)/V . s in Si-doped GaAs/AlGaAs two-dimensional electron gas (2DEG) structures. After the sample was illuminated by a light-emitting diode in magnetic fields up to 6 T at T = 2K, we did observe the persistent photoconductivity effect and the electron density increased obviously. The electronic properties of 2DEG have been studied by Quantum-Hall-effect and Shubnikov-de Haas (SdH) oscillation measurements. We found that the electron concentrations of two subbands increase simultaneity with the increasing total electron concentration, and the electron mobility also increases obviously after being illuminated. At the same time, we also found that the electronic quantum lifetime becomes shorter, and a theoretical explunation is given through the widths of integral quantum Hall plateaus.

Effect of small-angle scattering on the integer quantum Hall plateau

A GaAs/AlGaAs two-dimensional electron gas (2 DEG) structure with the high mobility of mu(2K) = 1.78 x 10(6) cm(2)/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64 ps to 0.52 ps after illuminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3 ps to 67.8 ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.

Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates

A Shubnikov-de Haas (SdH) oscillation measurement was performed on highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates at a temperature of 1.4 K. By analyzing the experimental data using fast Fourier transform, the electron densities and mobilities of more than one subband are obtained, and an obvious double-peak structure appears at high magnetic field in the Fourier spectrum. In comparing the results of SdH measurements, Hall measurements, and theoretical calculation, we found that this double-peak structure arises from spin splitting of the first-excited subband (i=1). Very close mobilities of 5859 and 5827 cm(2)/V s are deduced from this double-peak structure. The sum of the carrier concentration of all the subbands in the quantum well is only 3.95x10(12) cm(-2) due to incomplete transfer of the electrons from the Si delta -doped layer to the well. (C) 2001 American Institute of Physics.

甚短距离光传输技术

本书从光电子器件及其在光通信领域的应用出发，介绍了甚短距离光传输技术的组成、原理、实现方案、技术性能、关键技术以及在高速互连领域内的应用等。本书重点阐述了垂直腔面发射激光器的原理、工艺和特性；10gb/s和40gb/s传输方案的具体实现及其性能指标；甚短距离光传输涉及到的各项关键技术，如新型多模光纤技术、cwdm复用技术、硅探测器技术、高速光电集成(oeic)技术以及相关高速网络技术等。