Numerical Study on Critical Wedge Angle of Cellular Detonation Reflections

The critical wedge angle (CWA) for the transition from regular reflection (RR) to Mach reflection (MR) of a cellular detonation wave is studied numerically by an improved space-time conservation element and solution element method together with a two-step chemical reaction model. The accuracy of that numerical way is verified by simulating cellular detonation reflections at a 19.3∘ wedge. The planar and cellular detonation reflections over 45∘–55∘ wedges are also simulated. When the cellular detonation wave is over a 50∘ wedge, numerical results show a new phenomenon that RR and MR occur alternately. The transition process between RR and MR is investigated with the local pressure contours. Numerical analysis shows that the cellular structure is the essential reason for the new phenomenon and the CWA of detonation reflection is not a certain angle but an angle range.

Optical waveguide propagation loss measurement using multiple reflections method

Optical waveguide propagation loss measurement method based on optical multiple reflections detection is presented in this paper. By using a precision reflectometer, uncertain influence on waveguide propagation loss measurement caused by fiber-waveguide coupling can be eliminated effectively and the waveguide net propagation loss can be measured accurately. To demonstrate this, the propagation loss of a Silicon-on-Insulator (SOI) rib waveguide fabricated by RIE is measured with the obtained value being 4.3 dB/cm. This method provides a non-destructive means for evaluating waveguide propagation loss. (c) 2005 Elsevier B.V. All rights reserved.

Assessment of the structural properties of GaAs/Si epilayers using X-ray (004) and (220) reflections

We improved the method previously used to determine the lattice constants and misorientation of GaAs/Si by recording the patterns of X-ray (004) and (220) reflections. The (220) reflection was measured from the (110) cross section of a GaAs/Si epilayer. The structural properties of the GaAs/Si epilayers grown by metal-organic chemical-vapor deposition (MOCVD) using an ultrathin a-Si buffer layer were investigated. The rotation angle of GaAs/Si epilayers grown by MOCVD using an a-Si buffer layer is very small and the lattice constants of these GaAs/Si epilayers agree quite well with elastic theory.