苋属入侵种的可能分布区预测及相关环境因子分析

苋属（Amaranthus）约40种，世界均有分布。我国有20种，分布很广，其中外来种为17种(11种为入侵种)，危害旱田作物、果树、茶树和蔬菜。反枝苋（Amaranthus retroflexus L.）是苋属入侵种中发生频率最多、分布最广、危害最严重的杂草。本文首先基于反枝苋在世界范围内4207个实际分布点及其对应的气候、地形和土壤三类要素28个环境因子的定量关系，利用主成分分析确定了影响其分布的主要环境因子，据此估测其中心可能分布区和最大可能分布区，并与实际分布点进行比较;然后利用GARP生态位模型和地理信息系统(GIS)对影响苋属8个入侵种地理分布的环境因子进行分析并对其全球可能分布区进行预测，并根据苋属入侵种与环境因子的关系对8个苋属入侵种进行聚类分析;最后基于Receiver Operating Characteristics(ROC)分析对GARP模型及GIS模型对反枝苋全球可能分布区的预测结果进行精度检验和比较，结果表明： (1) GIS模型预测显示14个环境因子在决定反枝苋全球分布格局中起着重要作用。反枝苋中心可能分布区位于新西兰南部、澳大利亚东南部、南美洲北部少数地区、北美洲西北部及东南部部分地区、欧洲大部分地区和中国东南部。最大可能分布区位于南美洲中南部、北美洲大部分、非洲北部小部分、澳大利亚南部及北部少数区域、欧洲大部分地区和亚洲大部分地区及中国除西藏、青海、新疆、四川西部以外的地区。中心可能分布区的预测结果与实际分布点吻合较好，而最大可能分布区则过于广阔。 (2) GARP模型预测显示14个环境因子中雨日频率，极端低温，海拔这三个环境因子的影响较为重要，是苋属8个入侵种分布的主要限制因子。聚类分析表明8种苋属入侵种按欧式距离的长度可分为三类：第一类：反枝苋、凹头苋;第二类：刺苋、皱果苋、尾穗苋;第三类：绿穗苋、白苋、北美苋。 ROC分析结果显示GARP模型对反枝苋的可能分布区模拟效果（AUCGARP=0.857）好于GIS模型，其中GIS模型对反枝苋中心可能分布区的模拟效果(AUCGIS-CENTER=0.832)好于最大可能分布区(AUCGIS-MAX=0.778)。 苋属8个入侵种均有分布的地区为澳大利亚沿海地区，新西兰，中国东南沿海，欧洲西部，南美洲部分国家，美国，非洲中部。 (3)两种模型所预测的反枝苋的可能分布区有很大程度的重合性，GARP模型预测的可能分布区大于GIS模型预测出的中心可能分布区，但小于GIS模型预测出的最大可能分布区，且和实际分布点拟合程度较好。

Detection of hepatitis B virus markers using a biosensor based on imaging ellipsometry

A biosensor based on imaging ellipsometry (BIE) has been developed and validated in 169 patients for detecting five markers of hepatitis B virus (HBV) infection. The methodology has been established to pave the way for clinical diagnosis, including ligand screening, determination of the sensitivity, set-up of cut-off values (CoVs) and comparison with other clinical methods. A matrix assay method was established for ligand screening. The CoVs of HBV markers were derived with the help of receiver operating characteristic curves. Enzyme-linked immunosorbent assay (ELISA) was the reference method. Ligands with high bioactivity were selected and sensitivities of 1 ng/mL and 1 IU/mL for hepatitis B surface antigen (HBsAg) and surface antibody (anti-HBs) were obtained respectively. The CoVs of HBsAg, anti-HBs, hepatitis B e antigen, hepatitis B e antibody and core antibody were as follows: 15%, 18%, 15%, 20% and 15%, respectively, which were the percentages over the values of corresponding ligand controls. BIE can simultaneously detect up to five markers within 1 h with results in acceptable agreement with ELISA, and thus shows a potential for diagnosing hepatitis B with high throughput.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

Mechanical effects of the self-organization of dislocations and related critical characteristics

The effects of the dislocation pattern formed due to the self-organization of the dislocations in crystals on the macroscopic hardening and dynamic internal friction (DIF) during deformation are studied. The classic dislocation models for the hardening and DIF corresponding to the homogeneous dislocation configuration are extended to the case for the non-homogeneous one. In addition, using the result of dislocation patterning deduced from the non-linear dlislocation dynamics model for single slip, the correlation between the dislocation pattern and hardening as well as DIF is obtained. It is shown that in the case of the tension with a constant strain rate, the bifurcation point of dislocation patterning corresponds to the turning point in the stress versus strain and DIF versus strain curves. This result along with the critical characteristics of the macroscopic behavior near the bifurcation point is microscopically and macroscopically in agreement with the experimental findings on mono-crystalline pure aluminum at temperatures around 0.5T(m). The present study suggests that measuring the DIF would be a sensitive and useful mechanical means in order to study the critical phenomenon of materials during deformation.

Time-Frequency Analysis of Nonlinear Systems: The Skeleton Linear Model and the Skeleton Curves

The joint time-frequency analysis method is adopted to study the nonlinear behavior varying with the instantaneous response for a class of S.D.O.F nonlinear system. A time-frequency masking operator, together with the conception of effective time-frequency region of the asymptotic signal are defined here. Based on these mathematical foundations, a so-called skeleton linear model (SLM) is constructed which has similar nonlinear characteristics with the nonlinear system. Two skeleton curves are deduced which can indicate the stiffness and damping in the nonlinear system. The relationship between the SLM and the nonlinear system, both parameters and solutions, is clarified. Based on this work a new identification technique of nonlinear systems using the nonstationary vibration data will be proposed through time-frequency filtering technique and wavelet transform in the following paper.

Modelling Study On The Plasma Flow and Heat Transfer In A Laminar Arc Plasma Torch Operating At Atmospheric and Reduced Pressure

A modelling study is performed to investigate the characteristics of both plasma flow and heat transfer of a laminar non-transferred arc argon plasma torch operated at atmospheric and reduced pressure. It is found that the calculated flow fields and temperature distributions are quite similar for both cases at a chamber pressure of 1.0 atm and 0.1 atm. A fully developed flow regime could be achieved in the arc constrictor-tube between the cathode and the anode of the plasma torch at 1.0 atm for all the flow rates covered in this study. However the flow field could not reach the fully developed regime at 0.1 atm with a higher flow rate. The arc-root is always attached to the torch anode surface near the upstream end of the anode, i.e. the abruptly expanded part of the torch channel, which is in consistence with experimental observation. The surrounding gas would be entrained from the torch exit into the torch interior due to a comparatively large inner diameter of the anode channel compared to that of the arc constrictor-tube.

Temperature characteristics of optical parameters of phthalocyanine LB films and spin-coated films

The LB films and spin-coated films of tetra-neopentoxy phthalocyanine zinc (TNPPcZn) were prepared and annealed at different temperatures. Their refractive index (n) and extinction coefficient (k) were measured by p-polarized reflectance. The similar value of n and k, as well as similar changing tendency of it and k at varied annealing temperatures, was found between LB films and spin-coated films. In addition, the absorption curves of TNPPcZn LB films and spin-coated films in visible range at different annealing temperature were investigated. The results indicate that the changing tendency of the extinction coefficient of two kinds of TNPPcZn films obtained from two methods mentioned above were coincident. When the annealing temperature increased to 150 degrees C, the monomers of TNPPcZn films transformed to aggregates, n(f) and k(f) of the films increased. Further, n(f) and k(f) decreased as aggregates changed back to monomers again at the annealing temperature of 300 degrees C. The experimental results coincide well with the theoretical analysis. (C) 2004 Elsevier B.V. All rights reserved.

Growth and spectroscopic characteristics of Yb : LPS single crystal

For the first time, a high optical quality Yb3+-doped lutetium pyrosilicate laser crystal Lu2Si2O7 (LPS) was grown by the Czochralski (Cz) method. The segregation coefficient of ytterbium ion in Yb:LPS crystal detected by the inductively coupled plasma atomic emission spectrometer (TCP-AES) method is equal to 0.847. X-ray powder diffraction result confirms the C2/m phase monoclinic space group of the grown crystal and the peaks corresponding to different phases were indexed. The absorption and fluorescence spectra, as well as fluorescence decay lifetime of Yb3+ ion in LPS have been investigated. The absorption and fluorescence cross-sections of the transitions F-2(7/2) <-> F-2(5/2) of Yb3+ ion in LPS crystal have been determined. The advantages of the Yb:LPS crystal including high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections (1.33 x 10(-2) cm(2)) and particularly broad emission bandwidth (similar to 62 nm) indicated that the Yb:LPS crystal seemed to be a promising candidate used as compact, efficient thin chip lasers when LD is pumped at 940 and 980 nm due to its low-symmetry monoclinic structure and single crystallographic site. (c) 2007 Elsevier B.V. All rights reserved.

Dynamic P-I and P-V Curves for Semiconductor Lasers and Modulators

In this paper, we propose the dynamic P-V curve for modulator and P-I curve for laser diode, and present a simple approach to deriving the curves from the small-signal frequency responses measured using a microwave network analyzer. The linear response range, modulation efficiency, optimal driving conditions at different frequency can, therefore, be determined. It is demonstrated that the large-signal performance of electro-absorption (EA) modulator and the directly modulated semiconductor lasers can be predicted from the dynamic curved surface. Experiments show a good agreement between the evaluated characteristics and the measured large-signal performance.

Experimental verification on the origin of plateau-like current-voltage characteristics of resonant tunneling diodes

Current-voltage (I-V) characteristics of GaAs-based resonant tunneling diodes have been investigated in the presence of a perpendicular magnetic field. Electron resonant tunneling is strongly suppressed by the applied magnetic field, leading to peak current decreasing with increasing magnetic field. The observed plateau-like structures appear in negative differential resistance region on the I-V curves and are magnetic-field dependent. The plateau-like structures are due to the coupling between the energy levels in the emitter well and in the main quantum well. (C) 2004 American Institute of Physics.

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET

Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8 x 10(15), 2 x 10(16), and 1 x 10(17) cm(-2). The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.

Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts

Under identical preparation conditions, Au/GaN Schottky contacts were prepared on two kinds of GaN epilayers with significantly different background electron concentrations and mobility as well as yellow emission intensities. Current-voltage (I-V) and variable-frequency capacitance-voltage (C-V) characteristics show that the Schottky contacts on the GaN epilayer with a higher background carrier concentration and strong yellow emission exhibit anomalous reverse-bias I-V and C-V characteristics. This is attributed to the presence of deep level centers. Theoretical simulation of the low-frequency C-V curves leads to a determination of the density and energy level position of the deep centers. (c) 2006 American Institute of Physics.

Dose rate dependence of electrical characteristics of lead zirconate titanate capacitors

The influence of gamma-radiation dose rate on the electrical properties of lead zirconate titanate capacitors was investigated. More severe degradations in dielectric constant, coercive field, remanent polarization and capacitance-voltage (C-V) curves occurred with increasing radiation dose at lower dose rates. The electrical properties exhibited distinct radiation dose rate dependence and the worst-case degradation occurred at the lowest dose rate. The radiation-induced degradation of parameters such as the coercive field drift and distortion of the C-V curve can be recovered partly through post-irradiation annealing.

Radiative recombination characteristics in GaAs multilayer n(+)-i interfaces

In this communication, we have carried out a detailed investigation of radiative recombination in n-GaAs homojunction far-infrared detector structures with multilayer emitter (n(+))-intrinsic (i) interfaces by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter-layer luminescence structures has been identified from their luminescence characteristics, in combination with high density theoretical calculation. A photogenerated carrier transferring model has been proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, the obtained radiative recombination behavior helps us to offer a proposal to improve the operating temperature of the detector. (C) 2001 American Institute of Physics.

Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].