Detection of hepatitis B virus markers using a biosensor based on imaging ellipsometry

A biosensor based on imaging ellipsometry (BIE) has been developed and validated in 169 patients for detecting five markers of hepatitis B virus (HBV) infection. The methodology has been established to pave the way for clinical diagnosis, including ligand screening, determination of the sensitivity, set-up of cut-off values (CoVs) and comparison with other clinical methods. A matrix assay method was established for ligand screening. The CoVs of HBV markers were derived with the help of receiver operating characteristic curves. Enzyme-linked immunosorbent assay (ELISA) was the reference method. Ligands with high bioactivity were selected and sensitivities of 1 ng/mL and 1 IU/mL for hepatitis B surface antigen (HBsAg) and surface antibody (anti-HBs) were obtained respectively. The CoVs of HBsAg, anti-HBs, hepatitis B e antigen, hepatitis B e antibody and core antibody were as follows: 15%, 18%, 15%, 20% and 15%, respectively, which were the percentages over the values of corresponding ligand controls. BIE can simultaneously detect up to five markers within 1 h with results in acceptable agreement with ELISA, and thus shows a potential for diagnosing hepatitis B with high throughput.

苋属入侵种的可能分布区预测及相关环境因子分析

苋属（Amaranthus）约40种，世界均有分布。我国有20种，分布很广，其中外来种为17种(11种为入侵种)，危害旱田作物、果树、茶树和蔬菜。反枝苋（Amaranthus retroflexus L.）是苋属入侵种中发生频率最多、分布最广、危害最严重的杂草。本文首先基于反枝苋在世界范围内4207个实际分布点及其对应的气候、地形和土壤三类要素28个环境因子的定量关系，利用主成分分析确定了影响其分布的主要环境因子，据此估测其中心可能分布区和最大可能分布区，并与实际分布点进行比较;然后利用GARP生态位模型和地理信息系统(GIS)对影响苋属8个入侵种地理分布的环境因子进行分析并对其全球可能分布区进行预测，并根据苋属入侵种与环境因子的关系对8个苋属入侵种进行聚类分析;最后基于Receiver Operating Characteristics(ROC)分析对GARP模型及GIS模型对反枝苋全球可能分布区的预测结果进行精度检验和比较，结果表明： (1) GIS模型预测显示14个环境因子在决定反枝苋全球分布格局中起着重要作用。反枝苋中心可能分布区位于新西兰南部、澳大利亚东南部、南美洲北部少数地区、北美洲西北部及东南部部分地区、欧洲大部分地区和中国东南部。最大可能分布区位于南美洲中南部、北美洲大部分、非洲北部小部分、澳大利亚南部及北部少数区域、欧洲大部分地区和亚洲大部分地区及中国除西藏、青海、新疆、四川西部以外的地区。中心可能分布区的预测结果与实际分布点吻合较好，而最大可能分布区则过于广阔。 (2) GARP模型预测显示14个环境因子中雨日频率，极端低温，海拔这三个环境因子的影响较为重要，是苋属8个入侵种分布的主要限制因子。聚类分析表明8种苋属入侵种按欧式距离的长度可分为三类：第一类：反枝苋、凹头苋;第二类：刺苋、皱果苋、尾穗苋;第三类：绿穗苋、白苋、北美苋。 ROC分析结果显示GARP模型对反枝苋的可能分布区模拟效果（AUCGARP=0.857）好于GIS模型，其中GIS模型对反枝苋中心可能分布区的模拟效果(AUCGIS-CENTER=0.832)好于最大可能分布区(AUCGIS-MAX=0.778)。 苋属8个入侵种均有分布的地区为澳大利亚沿海地区，新西兰，中国东南沿海，欧洲西部，南美洲部分国家，美国，非洲中部。 (3)两种模型所预测的反枝苋的可能分布区有很大程度的重合性，GARP模型预测的可能分布区大于GIS模型预测出的中心可能分布区，但小于GIS模型预测出的最大可能分布区，且和实际分布点拟合程度较好。

Numerical analysis of spatial evolution of the small signal gain in a chemical oxygen-iodine laser operating without primary buffer gas

A chemical oxygen iodine laser (COIL) that operates without primary buffer gas has become a new way of facilitating the compact integration of laser systems. To clarify the properties of spatial gain distribution, three-dimensional (3-D) computational fluid dynamics (CFD) technology was used to study the mixing and reactive flow in a COIL nozzle with an interleaving jet configuration in the supersonic section. The results show that the molecular iodine fraction in the secondary flow has a notable effect on the spatial distribution of the small signal gain. The rich iodine condition produces some negative gain regions along the jet trajectory, while the lean iodine condition slows down the development of the gain in the streamwise direction. It is also found that the new configuration of an interleaving jet helps form a reasonable gain field under appropriate operation conditions. (c) 2007 Elsevier Ltd. All rights reserved.

Near-diffraction-limited, 35.4 W laser-diode end-pumped Nd:YVO4 slab laser operating at 1342 nm

A diode stack end-pumped Nd:YVO4 slab laser at 1342 nm with near-diffraction-limited beam quality by using a hybrid resonator was presented. At a pump power of 139.5 W, laser power of 35.4 W was obtained with a conversion efficiency of 25.4% of the laser diode to laser output. The beam quality M-2 factors were measured to be 1.2 in the unstable direction and 1.3 in the stable direction at the output power of 29 W. (C) 2009 Optical Society of America

Investigation on mechanism of critical cavitating flow in liquid jet pumps under operating limits

The critical cavitating flow in liquid jet pumps under operating limits is investigated in this paper. Measurements on the axial pressure distribution along the wall of jet pumps indicate that two-phase critical flow occurs in the throat pipe under operating limits. The entrained flow rate and the distribution of the wall pressure upstream lowest pressure section does not change when the outlet pressure is lower than a critical value. A liquid-vapor mixing shockwave is also observed under operating limits. The wave front moves back and forth in low frequency around the position of the lowest pressure. With the measured axial wall pressures, the Mach number of the two-phase cavitating flow is calculated. It's found that the maximum Mach number is very close to I under operating limits. Further analysis infers a cross-section where Mach number approaches to I near the wave front. Thus, the liquid-vapor mixture velocity should reach the local sound velocity and resulting in the occurrence of operating limits.

Modelling Study On The Plasma Flow and Heat Transfer In A Laminar Arc Plasma Torch Operating At Atmospheric and Reduced Pressure

A modelling study is performed to investigate the characteristics of both plasma flow and heat transfer of a laminar non-transferred arc argon plasma torch operated at atmospheric and reduced pressure. It is found that the calculated flow fields and temperature distributions are quite similar for both cases at a chamber pressure of 1.0 atm and 0.1 atm. A fully developed flow regime could be achieved in the arc constrictor-tube between the cathode and the anode of the plasma torch at 1.0 atm for all the flow rates covered in this study. However the flow field could not reach the fully developed regime at 0.1 atm with a higher flow rate. The arc-root is always attached to the torch anode surface near the upstream end of the anode, i.e. the abruptly expanded part of the torch channel, which is in consistence with experimental observation. The surrounding gas would be entrained from the torch exit into the torch interior due to a comparatively large inner diameter of the anode channel compared to that of the arc constrictor-tube.

Narrow line-width resonant cavity enhanced photodetectors operating at 1.55 mu m

A method for fabrication of long-wavelength narrow line-width InGaAs resonant cavity enhanced (RCE) photodetectors in a silicon substrate operating at the wavelength range of 1.3-1.6 mu m has been developed. A full width at half maximum (FWHM) of 0.7 nm and a peak responsivity of 0. 16 A/W at the resonance wavelength of 1.55 mu m have been accomplished by using a thick InP layer as part of the resonant cavity. The effects of roughness and tilt of the InP layer surface, and its free carrier absorption, as well as the thickness deviation of the mirror pair on the resonance wavelength shift and the peak quantum efficiency of the RCE photodetectors are analyzed in detail, and approaches for minimizing them toward superior performance are suggested. (C) 2007 Elsevier B.V. All rights reserved.

8 mu m strain-compensated quantum cascade laser operating at room temperature

We report on the material growth and device performance characterization of a strain-compensated In0.54Ga0.46As/In0.51Al0.49As quantum cascade laser at lambda similar to 8 mu m. For 2 mu s pulse at a 5 kHz repetition rate, laser action is achieved up to room temperature (30 degrees C). The tuning coefficient d lambda/dT is 1.37 nm K-1 between 83 K and 163 K and 0.60 nm K-1 in the range from 183 K to 303 K. The peak output power is reported to be similar to 11.3 mW per facet at 293 K and the corresponding threshold current density is 5.69 kA cm(-2).

Realization of quantum cascade laser operating at room temperature

X-ray diffraction, as an effective probe and simple method, is used to ascertain the precise control of the epilayer thickness and composition. Intersubband absorption from the whole structure of the QC laser is used to monitor the wavelength of the QC laser and the material quality. Path for growth of high-quality InP-based InGaAs/InAlAs quantum cascade laser material is realized. The absorption between two quantized energy levels is achieved at similar to4.7 mum. Room temperature laser action is achieved at lambda approximate to 5.1 - 5.2 mum. For some devices, if the peak output power is kept at 2 mW, quasi-continuous wave operation at room temperature can persist for more than I It. (C) 2002 Elsevier Science B.V. All rights reserved.

Strain-compensated quantum cascade lasers operating at room temperature

Quantum cascade (QC) lasers based on strain-compensated InxGa(1-x)As/InyAl(1-y)As grown on InP substrate using molecular beam epitaxy is reported. The epitaxial quality is demonstrated by the abundant narrow satellite peaks of double-crystal X-ray diffraction and cross-section transmission electron microscopy of the QC laser wafer. Laser action in quasi-continuous wave operation is achieved at lambda approximate to 3.6-3.7 mum at room temperature (34 degreesC) for 20 mum x 1.6 mm devices, with peak output powers of similar to 10.6mW and threshold current density of 2.7kA/cm(2) at this temperature. (C) 2000 Published by Elsevier Science B.V.

Si1-xGex/Si resonant-cavity-enhanced photodetectors with a silicon-on-oxide reflector operating near 1.3 mu m

We report on a Si1-xGex/Si multiple quantum-well resonant-cavity-enhanced (RCE) photodetector with a silicon-on-oxide reflector as the bottom mirror operating near 1.3 mu m. The breakdown voltage of the photodetector is above 18 V and the dark current density at 5 V reverse bias is 12 pA/mu m(2). The RCE photodetector shows enhanced responsivity with a clear peak at 1.285 mu m and the peak responsivity is measured around 10.2 mA/W at a reverse bias of 5 V. The external quantum efficiency at 1.3 mu m is measured to be 3.5% under reverse bias of 16 V, which is enhanced three- to fourfold compared with that of a conventional p-i-n photodetector with a Ge content of 0.5 reported in 1995 by Huang [Appl. Phys. Lett. 67, 566 (1995)]. (C) 2000 American Institute of Physics. [S0003-6951(00)00628-8].

Monolithic Integration of Light Emitting Diodes, Photodetector and Receiver Circuit in Standard CMOS Technology

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) is designed and fabricated with standard 0.35 mu m CMOS technology. This OEIC circuit consists of light emitting diodes (LED), silicon dioxide waveguide, photodiodes and receiver circuit. The silicon LED operates in reverse breakdown mode and can be turned on at 8.5V 10mA. The silicon dioxide waveguide is composed of multiple layers of silicon dioxide between different metals layers. A two PN-junctions photodetector composed of n-well/p-substrate junction and p(+) active implantation/n-well junction maximizes the depletion region width. The readout circuitry in pixels is exploited to handle as small as 0.1nA photocurrent. Simulation and testing results show that the optical emissions powers are about two orders higher than the low frequency detectivity of silicon CMOS photodetcctor and receiver circuit.

An integrated optical receiver in MS/RF CMOS process

A monolithically integrated optoelectronic receiver was realized utilizing a deep sub-micron MS/RF CMOS process. Novel photo-diode with STI and highspeed receiver circuit were designed. This OEIC takes advantage of several new features to improve the performance.

The application of parallel optical transmitter and receiver modules in communication subsystems

A new 12 channels parallel optical transmitter module in which a Vertical Cavity Surface Emitting Laser (VCSEL) has been selected as the optical source is capable of transmitting 37.5Gbps date over hundreds meters. A new 12 channels parallel optical receiver module in which a GaAs PIN (p-intrinsic-n-type) array has been selected as the optical receiver unit is capable of responding to 30Gbps date. A transmission system based on a 12 channels parallel optical transmitter module and a 12 channels parallel optical receiver module can be used as a 10Gbps STM-64 or an OC-192 optical transponder. The parallel optical modules and the parallel optical transmission system have passed the test in laboratory.

A 1Gb/s silicon photo-receiver in standard CMOS for 850-nm optical communication

A monolithic silicon CMOS optoelectronic integrated circuit (OEIC) was designed and fabricated with standard 0.6 mu m CMOS technology. This OEIC circuit consisted of an integrated double photodiode detector (DPD) and a preamplifier. The DPD detector exhibited high bandwidth by screening the bulk-generated diffusion carriers and suppressing the slow diffusion tail effect. The preamplifier exploited the regulated cascode (RGC) configuration as the input stage of receiver, thus isolating the influence of photodiode capacitance and input parasitic capacitance on bandwidth. Testing results showed that the bandwidth of OEIC was 700MHz, indicating the bit rate of 1Gb/s was achieved.