Self-consistent kinetic modeling of low-pressure inductively coupled radio-frequency discharges

An efficient method for solving the spatially inhomogeneous Boltzmann equation in a two-term approximation for low-pressure inductively coupled plasmas has been developed. The electron distribution function (EDF), a function of total electron energy and two spatial coordinates, is found self-consistently with the static space-charge potential which is computed from a 2D fluid model, and the rf electric field profile which is calculated from the Maxwell equations. The EDF and the spatial distributions of the electron density, potential, temperature, ionization rate, and the inductive electric field are calculated and discussed. (C) 1996 American Institute of Physics.

Magnetic field configurations of radio jets in the double source of radio galaxy

As an improvement of resolution of observations, more and more radio galaxies with radiojets have been identified and many fine structures in the radio jets yielded. In the presentpaper, the two-dimensional magnetohydrodynamical theory is applied to the analysis of themagnetic field configurations in the radio jefs. Two-dimensional results not only are con-sistent theoretically, but also explain the fine structures of observations. One of the theo-retical models is discussed in detail, and is in good agreement as compared with the observedradio jets of NGC6251. The results of the present paper also show that the magneticfields in the radio jets are mainly longitudinal ones and associate with the double sources ofQSOs if the magnetic field of the central object is stronger; the fields in the radio jets aremainly transverse ones and associate with the double sources of radio galaxies if the fieldof the central object is weaker. The magnetic field has great influence on the morphol-ogy and dynamic process.

The magnetic jet theory of double source in radio galaxy

The two-dimensional accelerating theory about solar wind is applied to the study of theaccelerating process of jet beam in the radio galaxy. The flowing features are given with theanalytic method, and the basic flow is along the direction of the jet beam. The mechanism ofacceleration from subsonic to supersonic flow is discussed. At the same time, some fine struc-tures about the double sources in the radio galaxy are explained.

Trapping of neutral atoms with a radio-frequency field

Based on the dressed-atom approach, we discuss a two-dimensional (2D) radio-frequency trap for neutral atoms, in which the trap potential derives from the magnetic-dipole transition among the hyperfine Zeeman sublevels. By adjusting the detuning of the radiation from resonance, the trapping states will be changed predominantly from the bare states Of m(FgF) > 0 to other states of m(FgF) < 0, where m(F) and g(F) are the quantum numbers of Zeeman sublevels and the Lande factor, respectively. This character contrasts finely with that, of a static magnetic, trap that can only trap or guide the states of m(FgF) > 0. In comparison to the optical field, the radio-frequency trap eliminates the spontaneous emission heating of the atoms. Unlike other oscillating traps reported in the e literature, the configuration of the radio-frequency trap is suitable for realization of a miniature magnetic guide.

Surface planar ion chip for linear radio-frequency Paul traps

We propose a surface planar ion chip which forms a linear radio frequency Paul ion trap. The electrodes reside in the two planes of a chip, and the trap axis is located above the chip surface. Its electric field and potential distribution are similar to the standard linear radio frequency Paul ion trap. This ion trap geometry may be greatly meaningful for quantum information processing.

A radio frequency field guide using field induced adiabatic potential

We study the behaviour of atoms in a field with both static magnetic field and radio frequency (rf) magnetic field. We calculate the adiabatic potential of atoms numerically beyond the usually rotating wave approximation, and it is pointed that there is a great difference between using these two methods. We find the preconditions when RWA is valid. In the extreme of static field almost parallel to rf field, we reach an analytic formula. Finally, we apply this method to Rb-87 and propose a guide based on an rf field on atom chip.

Low temperature growth of c-axis oriented AlN films on gamma-LiAlO2 by radio frequency magnetron sputtering

Aluminum nitride (AlN) films were prepared on gamma-LiAlO2 substrates by radio frequency (rf) magnetron sputtering. The influence of substrate temperature (T-s) and nitrogen (N-2) concentration on film growth was investigated. The X-ray diffraction (XRD) results reveal that highly c-axis oriented AlN films can be obtained in the temperature range from room temperature (RT) to 300 degrees C. A smoother surface and a crystalline quality decrease with increasing N-2 concentration have been observed by XRD and atomic force microscopy (AFM) for the films deposited at lower substrate temperature. On the contrary, the degradation of the surface smoothness and the higher crystalline quality can be observed for the films deposited at a higher substrate temperature with N-2-rich ambient. The growth mechanism which leads to different crystalline quality of the films is discussed. (C) 2008 Elsevier B.V. All rights reserved.

Fiber Dispersion and Nonlinearity Influences on Transmissions of AM and FM Data Modulation Signals in Radio-Over-Fiber System

Transmission properties of data amplitude modulation (AM) and frequency modulation (FM) in radio-over-fiber (RoF) system are studied numerically. The influences of fiber dispersion and nonlinearity on different microwave modulation schemes, including double side band (DSB), single side band (SSB) and optical carrier suppression (OCS), are investigated and compared. The power penalties at the base station (BS) and the eye opening penalties of the recovered data at the end users are both calculated and analyzed. Numerical simulation results reveal that the power penalty of FM can be drastically decreased due to the larger modulation depth it can achieve than that of AM. The local spectrum broadening around subcarrier microwave frequency of AM due to fiber nonlinearity can also be eliminated with FM. It is demonstrated for the first time that the eye openings of the FM recovered data can be controlled by its modulation depths and the coding formats. Negative voltage encoding format was used to further decrease the RF frequency thus increase the fluctuation period considering their inverse relationship.

Doped polycrystalline 3C-SiC films deposited by LPCVD for radio-frequency MEMS applications

Polycrystalline 3C-SiC films are deposited on SiO2 coated Si substrates by low pressure chemical vapour deposition (LPCVD) with C3H8 and SiH4 as precursors. Controlled nitrogen doping is performed by adding NH3 during SiC growth to obtain the low resistivity 3C-SiC films. X-ray diffraction (XRD) patterns indicate that the deposited films are highly textured (111) orientation. The surface morphology and roughness are determined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The surface features are spherulitic texture with average grain size of 100 nm, and the rms roughness is 20nm (AFM 5 x 5 mu m images). Polycrystalline 3C-SiC films with highly orientational texture and good surface morphology deposited on SiO2 coated Si substrates could be used to fabricate rf microelectromechanical systems (MEMS) devices such as SiC based filters.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

A study on the realization of radio frequency energy AC/DC charge pump based on MOS FET

This paper presents a novel efficient charge pump composed of low Vth metal-oxide-semiconductor (MOS) field effect transistors (FET) in the course of realizing radio frequency (RF) energy AC/DC conversion. The novel structure eliminates those defects caused by typical Schottky-diode charge pumps, which are dependent on specific processes and inconsistent in quality between different product batches. Our analyses indicate that an easy-fabricated, stable and efficient RF energy AC/DC charge pump can be conveniently implemented through reasonably configuring the MOS transistor aspect ratio, and other design parameters such as capacitance, multiplying stages to meet various demands on performance.

High-power electroabsorption modulator for radio over fibre system

An electroabsorption modulator using an intra-step quantum well (IQW) active region is fabricated for a radio over fibre system. The strain-compensated InGaAsP/InGaAsP IQW shows good material quality and improved modulation properties, high extinction ratio efficiency (10 dB V-1) and low capacitance (< 0.42 pF), with which high frequency (> 15 GHz) can be obtained. High-speed measurement under high-power excitation shows no power saturation up to an excitation power of 21 dBm. To our knowledge, the input optical power is the highest reported for a multi-quantum well EAM without a heat sink.

p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering

Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics.