p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering
Data(s) |
2006
|
---|---|
Resumo |
Sb-doped Zn1-xMgxO films were grown on c-plane sapphire substrates by radio-frequency magnetron sputtering. The p-type conduction of the films (0.05 <= x <= 0.13) was confirmed by Hall measurements, revealing a hole concentration of 10(15)-10(16) cm(-3) and a mobility of 0.6-4.5 cm(2)/V s. A p-n homojunction comprising an undoped ZnO layer and an Sb-doped Zn0.95Mg0.05O layer shows a typical rectifying characteristic. Sb-doped p-type Zn1-xMgxO films also exhibit a changeable wider band gap as a function of x, implying that they can probably be used for fabrication of ZnO-based quantum wells and ultraviolet optoelectronic devices. (c) 2006 American Institute of Physics. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Wang P (Wang Peng); Chen NF (Chen Nuofu); Yin ZG (Yin Zhigang); Dai RX (Dai Ruixuan); Bai YM (Bai Yiming) .p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering ,APPLIED PHYSICS LETTERS,2006 ,89(20):Art.No.202102 |
Palavras-Chave | #半导体材料 #ZNO THIN-FILMS #MGXZN1-XO #DEVICES #ALLOY |
Tipo |
期刊论文 |