Design and control of an ultraprecision stage used in grating tiling

In petawatt laser system, the gratings used to compose pulse compressor are very large in size which can be only acquired currently by arraying small aperture gratings to form a large one instead, an approach referred to as grating tiling. Theory and experiments have demonstrated that the coherent addition of multiple small gratings to form a larger grating is viable, the key technology of which is to control the relative position and orientation of each grating with high precision. According to the main factors that affect the performance of the grating tiling, a 5-DOF ultraprecision stage is developed for the grating tiling experiment. The mechanism is formed by serial structures. The motion of the mechanism is guided by flexure hinges and driven by piezoelectric actuators and the movement resolution of which can achieve nanometer level. To keep the stability of the mechanism, capacitive position sensors with nanometer accuracy are fixed on it to provide feedback signals with which to realize closed-loop control, thus the positioning precision of the mechanism is within several nanometers range through voltage control and digital PID algorithm. Results of experiments indicate that the performance of the mechanism can meet the requirement of precision for grating tiling.}

AUV定位信号检测延时的蒙特卡洛模拟分析

在简要介绍AUV声学定位声纳接收机原理基础上,分析了CW脉冲信号在极性相关检测电路中的传输过程,建立了极性相关积分检测延时仿真分析模型。提出采用蒙特卡洛模拟方法获取检测延时的分布特征和统计参数的观点。实验结果表明蒙特卡洛模拟实验与硬件电路实验结果一致,对于解决随机性检测延时问题具有很强的能力。获得的结果可为AUV定位声纳检测门限的设定、声学测距和定位精度分析以及水声通信延时分析提供参考。

超短基线定位系统在ROV动力定位中应用的可行性研究

以英国 Sonardyne公司的超短基线 (Ultra- Short Base L ine)为研究对象 ,研究了该系统在各种情况下的重复定位精度 ,以及将该系统应用于水下机器人动力定位的可能性 .实验结果表明 ,即使存在姿态偏差 ,如果通过姿态传感器进行动态补偿 ,该系统仍能获得很好的重复定位精度 ,可以满足水下机器人动力定位的需要

Study on eight-pass dual-frequency laser interferometer with nanometer precision

A new dual-frequency laser displacement measurement interferometer with nanometer precision has been developed. An eight-pass optical subdivision technology is proposed to improve resolution based on commercial interferometers. A static positioning error measuring method has been used to examine the precision and repeatability of the laser interferometer. An optical resolution of 1.24 nm and an accuracy of nanometer scale have been achieved.

EVALUATION OF THE EFFECT OF WAVELENGTH POSITIONING ERRORS ON KALMAN FILTERING RESULTS IN INDUCTIVELY COUPLED PLASMA ATOMIC EMISSION-SPECTROMETRY

This work evaluates the effect of wavelength positioning errors in spectral scans on analytical results when the Kalman filtering technique is used for the correction of line interferences in inductively coupled plasma atomic emission spectrometry (ICP-AES). The results show that a positioning accuracy of 0.1 pm is required in order to obtain accurate and precise estimates for analyte concentrations. The positioning error in sample scans is more crucial than that in model scans. The relative bias in measured analyte concentration originating from a positioning error in a sample scan increases linearly with an increase in the magnitude of the error and the peak distance of the overlapping lines, but is inversely proportional to the signal-to-background ratio. By the use of an optimization procedure for the positions of scans with the innovations number as the criterion, the wavelength positioning error can be reduced and, correspondingly, the accuracy and precision of analytical results improved.

狭缝投影位置传感技术及其在精密定位中的应用

提出了一种基于狭缝投影的位置传感技术，阐述了此技术的传感原理及其在精密定位中的应用。准直激光束照明的投影狭缝由一个透镜以掠入射角度投影在被测物体上，狭缝投影经过被测物体表面的反射和另一个透镜的成像在探测双缝上形成投影狭缝像。探测双缝放大成像在双像限探测器上，投影狭缝像透过探测双缝的光强分别被双像限探测器的两个像限所接收，通过检测双像限探测器两个像限上的光强获得被测物体的位置。实验验证了此传感技术的可行性，其位置重复测量偏差小于32nm（1σ）。

大行程高分辨率微定位机构的设计分析

压电驱动器的位移输出能力有限，因此通常借助于柔性机构对其位移量进行放大。对常用的柔性放大机构的性能进行了分析。提出一种柔性八杆放大机构，并对其进行有限元分析和理论计算。为了提高放大率，提出两级串连式机构。机构整体具有结构紧凑、放大效率较高的优点。

五自由度纳米级定位精度机构的研制

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用压电陶瓷作为驱动元件，柔性导向机构实现平移及转动功能。整个工作台可由整块金属材料通过线切割加工制成，实现一体化加工，而且结构紧凑。并给出导向机构刚度计算公式及设计实例。

五自由度纳米级定位工作台的设计研究

提出一种新型的五自由度精密定位平台的工作原理及其设计方法。工作台采用柔性导向机构实现平移及转动功能，采用压电陶瓷作为驱动元件，外置纳米级电容传感器作为位移量测量反馈元件，采用数字PID控制方法，可以实现纳米级精度的定位。给出了多种形式柔性导向机构刚度计算公式及设计实例。

A novel method for positioning of InAs islands on GaAs(110)

A novel method for positioning of InAs islands on GaAs (110) by cleaved edge overgrowth is reported. The first growth sample contains strained InxGa1-xAs/GaAs superlattice (SL) of varying indium fraction, which acts as a strain nanopattern for the cleaved-edge overgrowth. Atoms incident on the cleaved edge will preferentially migrate to InGaAs regions where favorable bonding sites are available. By this method InAs island chains with lateral periodicity defined by the thickness of InGaAs and GaAs of SL have been realized by molecular beam epitaxy (MBE). They are observed by means of atomic force microscopy (AFM). The strain nanopattern's effect is studied by the different indium fraction of SL and MBE growth conditions. (c) 2005 Elsevier B.V. All rights reserved.

High-precision determination of lattice constants and structural characterization of InN thin films

X-ray diffraction and Rutherford backscattering/channeling were used to characterize the crystalline quality of an InN layer grown on Al2O3(0001) Using metal-organic chemical-vapor deposition. A full width at half maximum of 0.27 degrees from an InN(0002) omega scan and a minimum yield of 23% from channeling measurements show that this 480-nm-thick InN layer grown at low temperature (450 degrees C) has a relatively good crystalline quality. High-resolution x-ray diffraction indicates that the InN layer contains a small fraction of cubic InN, besides the predominant hexagonal phase. From this InN sample, the lattice constants a=0.353 76 nm and c=0.570 64 nm for the hexagonal InN and a=0.4986 nm for the cubic InN were determined independently. 2 theta/omega-chi mapping and a pole figure measurement revealed that the crystallographic relationship among the cubic InN, the hexagonal InN, and the substrate is: InN[111]parallel to InN[0001]parallel to Al2O3[0001] and InN{110}parallel to InN{1120}parallel to Al2O3{1010}, and that the cubic InN is twinned. Photoluminescence measurements indicate that the band-gap energy of this sample is approximately 0.82 eV. (c) 2006 American Vacuum Society.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.