Influence of lateral propagating modes on laser output characteristics in selectively oxidized vertical cavity surface-emitting lasers with double oxide layers

The influence of lateral propagating modes on the threshold current and the spontaneous emission factor in selectively oxidized vertical cavity surface-emitting lasers (VCSELs) is investigated based on the mode behaviors of lateral propagating modes and the rate equation model. The numerical results show that the lateral propagating modes may be trapped in the aperture region for the selectively oxidized VCSEL with two oxide layers, one above and one below the active region. The output characteristics of VCSELs can be affected due to the reabsorption of the quasitrapped lateral propagating modes. A lower threshold current can be expected for a VCSEL with double oxide layers than that with a single oxide layer. The numerical results of rate equations also show that a larger spontaneous emission factor can be obtained by fitting the output-input curves for the VCSEL with double oxide layers. (C) 1999 American Institute of Physics. [S0021-8979(99)07919-0].

MEV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SILICON-NITRIDE AND OXIDE LAYERS ON SILICON

A simple method for the analysis of concentration ratios N/Si and O/Si in silicon nitride and oxide layers on silicon substrate is presented. 1.95-MeV proton elastic backscattering was used to determine the composition and density. A comparison with 2.1-MeV helium Rutherford backscattering measurements is given. Results are in good agreement with each other. The method is especially useful to analyze samples of 20 000 angstrom or thicker layers. We conclude that these two techniques are complementary for the measurements of samples with different thickness. A brief discussion has been given on results.

The enhancement of spontaneous emission factor in selectively oxidized vertical cavity lasers with double oxide layers

The behaviors of lateral propagating modes in the aperture and the oxidized regions are investigated numerically for selectively oxidized vertical-cavity surface-emitting lasers (VCSELs). The results show that the lateral propagating modes in the oxidized region are greatly affected by the oxide layer due to its low index, the modes are divergence for the VCSELs with sufficient thick double oxide layers. So the coupling between the modes in the aperture and oxidized regions is very weak, and we can expect that the lateral spontaneous emission is greatly affected in this case. Ignoring the contribution of the lateral spontaneous emission, we calculate spontaneous emission factor by counting the total number of the guided modes in selectively oxidized VCSELs with double oxide layers. The results agree very well with the reported measurements and are inversely proportional to the lateral index step.

Radiation hardness improvement of separation-by-implantation-of-oxygen/silicon-on-insulator material by nitrogen ion implantation

In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers to improve the radiation hardness of the SIMOX material. The experiments of secondary ion mass spectroscopy (SIMS) analysis showed that some nitrogen ions were distributed in the buried oxide layers and some others were collected at the Si/SiO2 interface after annealing. The results of electron paramagnetic resonance (EPR) suggested the density of the defects in the nitrided samples changed with different nitrogen ion implantation energies. Semiconductor-insulator-semiconductor (SIS) capacitors were made on the materials, and capacitance-voltage (C-V) measurements were carried out to confirm the results. The super total dose radiation tolerance of the materials was verified by the small increase of the drain leakage current of the metal-oxide-semiconductor field effect transistor with n-channel (NMOSFETs) fabricated on the materials before and after total dose irradiation. The optimum implantation energy was also determined.

Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors

The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy. The wet oxidized AlGaAs transforms from an initial amorphous hydroxide phase to the polycrystalline gamma-Al2O3 phase with the extension of oxidation time. The thickness of oxide layers will contract due to the different volume per Al atom in AlGaAs and in the oxides. In the samples oxidized for 10 and 20 min, there are some fissures along the AlGaAs/GaAs interfaces. In the samples oxidized longer, although no such fissures are present along the interfaces, the whole oxidized DBR delaminates from the buffer. (c) 2005 American Vacuum Society.

A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration

A novel Si-based metal-oxide-semiconductor (MOS) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (SOI) waveguide is simulated and analyzed. The refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. The theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. The influence of the structure parameters such as the width and the doping level of the active region are analyzed. A half-wave voltage V-pi = 4 V is demonstrated with an 8-mm active region length and a 4-mu m width of an inner rib under an accumulation mode. When decreasing the inner rib width to 1 mu m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0 x 10(17) cm(-3) doping level in the active region.

A High-Performance Silicon Electro-Optic Phase Modulator with a Triple MOS Capacitor

We propose and analyze a novel Si-based electro-optic modulator with an improved metal-oxide-semiconductor (MOS) capacitor configuration integrated into silicon-on-insulator (SOI).Three gate-oxide layers embedded in the silicon waveguide constitute a triple MOS capacitor structure,which boosts the modulation efficiency compared with a single MOS capacitor.The simulation results demonstrate that the VπLπ product is 2.4V·cm.The rise time and fall time of the proposed device are calculated to be 80 and 40ps from the transient response curve,respectively,indicating a bandwidth of 8GHz.The phase shift efficiency and bandwidth can be enhanced by rib width scaling.

Synthesis and characterization of monodisperse spherical SiO2@RE2O3 (RE = rare earth elements) and SiO2@Gd2O3:Ln(3+) (Ln = Eu, Tb, Dy, Sm, Er, Ho) particles with core-shell structure

Spherical SiO2 particles have been coated with rare earth oxide layers by a Pechini sol-gel process, leading to the formation of core-shell structured SiO2@RE2O3 (RE = rare earth elements) and SiO2@Gd2O3:Ln(3+) (Ln = Eu, Tb, Dy, Sm, Er, Ho) particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence spectra as well as lifetimes were used to characterize the resulting SiO2@RE2O3 (RE = rare earth elements) and SiO2@Gd2O3:Ln(3+) (Eu3+, Tb3+, Dy3+, Sm3+, Er3+, Ho3+) samples. The obtained core-shell phosphors have perfect spherical shape with narrow size distribution (average size ca. 380 nm), smooth surface and non-agglomeration. The thickness of shells could be easily controlled by changing the number of deposition cycles (40 nm for two deposition cycles).

The structural composite effect of Au-WO3-Al interconnecting electrode on performance of each unit in stacked OLEDs

In this article, we report the effects of the thickness of metal and oxide layers of the Al/WO3/Au interconnecting structure on the electrical and optical characteristics of the and bottom units of the two-unit stacked organic-light-emitting-devices (OLEDs). It is found that light emission performance of the upper unit is sensitive to the transmittance of semitransparent Al/WO3/Au structure, which can be improved by changing the thickness of each layer of the Al/WO3/Au structure. It is important to note that the introduction WO3 between Al and Au significantly enhances the current efficiency of both the upper and bottom units with respect to that of the corresponding Al/Au structure without WO3. In addition, the emission spectra of both the upper and bottom units are narrower than that of the control device due to microcavity effect. Our results indicate that the All WO3/Au interconnecting structure is a good candidate for fabricating independently controllable high efficiency stacked OLEDs.

A novel method for preparing ordered SnO2/TiO2 alternate nanoparticulate films

A novel method using LB films as precursors to prepare pure inorganic ordered film with periodic structure was developed. Surfactant-stabilized SnO2 nanoparticulate organosols and TiO2 nanoparticulate organosols were prepared and used as spreading solutions. Using LB technique, the good film-forming ability of the surfactant-stabilized SnO2 nanoparticles and TiO2 nanoparticles was confirmed by the determination of the pi -A isotherms. The surfactant-stabilized SnO2 and TiO2 nanoparticulate monolayers were fabricated on the water surface and then were transferred to solid substrates (CaF2, quartz, silicon, and so on) alternately, layer-by-layer. Then the as-deposited alternate LB film was treated at different temperatures. The as-deposited alternate LB film and the treated film were characterized by Fourier transform infrared spectroscopy, UV visible spectroscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. The results indicate that our method was successful. The as-deposited alternate LB film formed a periodic structure with a long spacing of 6.5 nm that was composed of SnO2 nanoparticles, TiO2 nanoparticles, and arachidic acid. The treated film composed of SnO2 nanoparticles and TiO2 nanoparticles formed a pure inorganic periodic structure with an ordered distance of 5.4 nm. (C) 2001 Academic Press.

Characteristics of oxide-free InGaAlAs layers grown by narrow stripe selective MOVPE

Narrow stripe selective MOVPE has been used to grow high quality oxide-free InGaAlAs layers on an InP substrate patterned with SiO2 masks at optimized growth conditions. Mirror-like surface morphologies and abrupt cross sections are obtained in all samples without spike growth at the mask edge. For the narrow stripe selectively grown InGaAlAs layers with a mesa width of about 1.2 mu m, a bandgap wavelength shift of 70 nm, a photoluminescence (PL) intensity of more than 80% and a PL full width at half maximum (FWHM) of less than 60 meV are obtained simultaneously with a small mask width variation from 0 to 40 mu m. The characteristics of the thickness enhancement ratio and the PL spectrum dependence on the mask width are presented and explained by considering both the migration effect from a masked region and the lateral vapour diffusion effect.

A 1.3μm Low-Threshold Edge-Emitting Laser with AlInAs-Oxide Confinement Layers

A 1.3μm low-threshold edge-emitting AlGaInAs multiple-quantum-well(MQW) laser with AlInAs-oxide confinement layers is fabricated.The Al-contained waveguide layers upper and low the active layers are oxidized as current-confined layers using wet-oxidation technique.This structure provides excellent current and optical confinement,resulting in 12.9mA of a low continuous wave threshold current and 0.47W/A of a high slope efficiency of per facet at room temperature for a 5-μm-wide current aperture.Compared with the ridge waveguide laser with the same-width ridge,the threshold current of the AlInAs-oxide confinement laser has decreased by 31.7% and the slope efficiency has increased a little.Both low threshold and high slope efficiency indicate that lateral current confinement can be realized by oxidizing AlInAs waveguide layers.The full width of half maximum angles of the Al-InAs-oxide confinement laser are 21.6° for the horizontal and 36.1° for the vertical,which demonstrate the ability of the AlInAs oxide in preventing the optical field from spreading laterally.

Numerical analysis and comparison of three metal-oxide-type super-resolution near field structures

Based on the Fresnel-Kirchkoff diffraction theory, we build up a Gaussian diffraction model of metal-oxide-type super-resolution near field structure (super-RENS), which can describe far field optical properties. The spectral contrast induced by refractive index and the structural changes in AgOx, PtOx and PdOx thin films, which are the key functional layers in super-RENS, are studied by using this model. Comparison results indicate that the spectral contrast intensively on laser-induced distribution and change of the refractive index in the metal-oxide films. The readout mechanism of the metal-oxide-type super-RENS optical disc is further clarified. This Gaussian diffraction model can be used as a simple and effective method for choosing proper active materials in super-RENS.

Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms

The bulge test is successfully extended to the determination of the fracture properties of silicon nitride and oxide thin films. This is achieved by using long diaphragms made of silicon nitride single layers and oxide/nitride bilayers, and applying comprehensive mechanical model that describes the mechanical response of the diaphragms under uniform differential pressure. The model is valid for thin films with arbitrary z-dependent plane-strain modulus and prestress, where z denotes the coordinate perpendicular to the diaphragm. It takes into account the bending rigidity and stretching stiffness of the layered materials and the compliance of the supporting edges. This enables the accurate computation of the load-deflection response and stress distribution throughout the composite diaphragm as a function of the load, in particular at the critical pressure leading to the fracture of the diaphragms. The method is applied to diaphragms made of single layers of 300-nm-thick silicon nitride deposited by low-pressure chemical vapor deposition and composite diaphragms of silicon nitride grown on top of thermal silicon oxide films produced by wet thermal oxidation at 950 degrees C and 1050 degrees C with target thicknesses of 500, 750, and 1000 mn. All films characterized have an amorphous structure. Plane-strain moduli E-ps and prestress levels sigma(0) of 304.8 +/- 12.2 GPa and 1132.3 +/- 34.4 MPa, respectively, are extracted for Si3N4, whereas E-ps = 49.1 +/- 7.4 GPa and sigma(0) = -258.6 +/- 23.1 MPa are obtained for SiO2 films. The fracture data are analyzed using the standardized form of the Weibull distribution. The Si3N4 films present relatively high values of maximum stress at fracture and Weibull moduli, i.e., sigma(max) = 7.89 +/- 0.23 GPa and m = 50.0 +/- 3.6, respectively, when compared to the thermal oxides (sigma(max) = 0.89 +/- 0.07 GPa and m = 12.1 +/- 0.5 for 507-nm-thick 950 degrees C layers). A marginal decrease of sigma(max) with thickness is observed for SiO2, with no significant differences between the films grown at 950 degrees C and 1050 degrees C. Weibull moduli of oxide thin films are found to lie between 4.5 +/- 1.2 and 19.8 +/- 4.2, depending on the oxidation temperature and film thickness.

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.