Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors


Autoria(s): Li RY; Wang ZG; Xu B; Jin P; Guo X; Chen M
Data(s)

2005

Resumo

The time dependence of wet oxidized AlGaAs/GaAs in a distributed Bragg reflector (DBR) structure has been studied by mean of transmission electron microscopy and Raman spectroscopy. The wet oxidized AlGaAs transforms from an initial amorphous hydroxide phase to the polycrystalline gamma-Al2O3 phase with the extension of oxidation time. The thickness of oxide layers will contract due to the different volume per Al atom in AlGaAs and in the oxides. In the samples oxidized for 10 and 20 min, there are some fissures along the AlGaAs/GaAs interfaces. In the samples oxidized longer, although no such fissures are present along the interfaces, the whole oxidized DBR delaminates from the buffer. (c) 2005 American Vacuum Society.

Identificador

http://ir.semi.ac.cn/handle/172111/8456

http://www.irgrid.ac.cn/handle/1471x/63758

Idioma(s)

英语

Fonte

Li, RY; Wang, ZG; Xu, B; Jin, P; Guo, X; Chen, M .Time dependence of wet oxidized AlGaAs/GaAs distributed Bragg reflectors ,JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,SEP-OCT 2005,23 (5):2137-2140

Palavras-Chave #半导体材料 #SURFACE-EMITTING LASERS
Tipo

期刊论文