Nondestructive measurements of stoichiometry in undoped semi-insulating gallium arsenide by x-ray bond method

The influences of microdefects and dislocations on the lattice parameters of undoped semi-insulating GaAs single crystals were analyzed, and a novel nondestructive method for measuring stoichiometry in undoped semi-insulating GaAs was established in this letter. The comparison of this method with coulometric titration indicates that the method of nondestructive measurements is indeed convenient and reliable. (C) 1996 American Institute of Physics.

Experimental investigation of the shear strength of a unidirectional carbon/aluminum composite under dynamic torsional loading

In this paper, the dynamic shear strength of a unidirectional C/A356.0 composite and A356.0 alloy, respectively, are measured with a split Hopkinson torsional bar (SHTB) technique. The results indicate that the carbon fibers make very little contribution to the enhancement of the shear strength of the matrix material. The microscopic inspections on the fracture surface of the composite show a multi-scale zigzag feature. This implies that there is a complicated shear failure mechanism in the unidirectional carbon/aluminum composite.

利用数字全息干涉术观察RuO2：LiNbO3晶体中畴反转的区域特性

利用马赫-曾德尔干涉光路和V光学透镜系统，以部分畴反转的掺钌铌酸锂晶体（RuO2：LiNbO3）的透射光作为物光来记录全息图，并在数值再现过程对其进行频域滤波以实现物场波前信息的数值重建，检测出在一定电压作用下晶体内部折射率变化的二维分布．检测结果证实;晶体中发生畴反转的区域与发生电色效应的区域严格相符．数字全息干涉术非接触、无干扰、无破坏的优势在准实时监控、检测和分析铌酸锂晶体畴反转方面有很好的应用前景．

Construction of the refractive index profiles for few-mode planar optical waveguides

We present a nondestructive technique to predict the refractive index profiles of isotropic planar waveguides, on which a thin gold film is deposited to as the cladding. The negative dielectric constant of the metal results in significant differences of effective indices between TE and TM modes. The two polarized modes and a surface plasmon resonance (SPR) with abundant information of the surface index can be used to construct the refractive index profiles of single-mode and two-mode waveguides at a fixed wavelength. (c) 2005 Elsevier B.V. All rights reserved.

几种不同产地软玉的岩相结构和无破损成分分析

利用质子激发X射线荧光（PIXE）、X射线衍射（XRD）、扫描电子显微镜（SEM）以及激光拉曼光谱（LRS）技术对几个来自中国新疆、俄罗斯、加拿大和新西兰等地的软玉样品的进行了岩石矿物学特征分析,从成分组成和微观织构方面比较了各地软玉的不同特征.实验结果显示了软玉作为透闪石质玉石,随着Fe2O3含量的增加,逐步向阳起石过渡.中国和田玉以其特有的毛毡状纤维交织结构,形成了均匀细腻、油脂光泽的表面特征.无破损成分分析方法为研究贵重的古玉样品提供了技术支持.

河南安阳市新出土殷墟玉器的无损分析检测的研究

为研究安阳市新出土殷墟玉器的质地和来源，利用外束质子激发X射线荧光（PIXE）、X射线衍射（XRD）以及激光拉曼光谱（LRS）技术对玉器进行了矿物学特征分析，从成分、矿相和结构研讨它们的质地和来源。实验结果显示，安阳市新出土殷墟玉器中80％为透闪石型软玉，且来自同一矿区，质地较好。个别样品属蛇纹石类型玉石和白云石岩。本研究证实了激光Raman光谱对古玉器鉴别的应用前景。

河南南阳独山玉的岩相结构和无损分析(英文)

河南南阳独山玉的开采历史可以追溯到新石器时代,在我国玉文化中占有重要地位。鉴于当前对独山玉进行无损鉴别的方法较少,利用质子激发X荧光技术(proton induced X-ray emission,PIXE)、X射线衍射(X-ray diffraction,XRD)、激光Raman光谱(laser Raman spectroscopy,LRS)和扫描电子显微镜(scanning electron microscope,SEM)等技术对河南南阳独山玉料进行岩石矿物学分析。结果表明:独山玉主要由钙长石矿物构成,晶粒细小且结合紧密的显微结构与独山玉具有极高的稳定性有较大关系。PIXE,XRD和Raman技术作为无损分析方法为鉴定独山玉提供了准确有效的方法,为研究贵重的古玉样品提供了技术支持。

A large-area photolithography technique based on surface plasmons leakage modes

An atomic force microscope (AFM) assisted surface plasmons leakage radiation photolithography technique has been numerically demonstrated by using two-dimensional finite-difference time-domain (2D-FDTD) method. With the aid of a metallic AFM tip, particular characteristic of the Kretstchmann configuration to excite surface plasmons (SPs) is utilized to achieve large-area patterns with high spatial resolution and contrast, the photoresist could be exposed with low power laser due to the remarkable local field enhancement at the metal/dielectric interface and the resonant localized SPs modes near the tip. Good tolerance on the film thickness and incident angle has been obtained, which provides a good practicability for experiments. This photolithography technique proposed here can realize large-area, high-resolution, high-contrast, nondestructive, arbitrary-structure fabrication of nanoscale devices. (c) 2007 Elsevier B.V. All rights reserved.

Subsurface damage in optical substrates

The origin, character, analysis and treatment of subsurface damage (SSD) were summarized in this paper. SSD, which was introduced to substrates by manufacture processes, may bring about the decrease of laser-induced damage threshold (LIDT) of substrates and thin films. Nondestructive evaluation (NDE) methods for the measurement of SSD were used extensively because of their conveniences and reliabilities. The principle, experimental setup and some other technological details were given for total internal reflection microscopy (TIRM), high-frequency scanning acoustic microscopy (HFSAM) and laser-modulated scattering (LMS). However, the spatial resolution, probing depth and theoretic models of these NDE methods demanded further studies. Furthermore, effective surface treatments for minimizing or eliminating SSD were also presented in this paper. Both advantages and disadvantages of ion beam etching (IBE) and magnetorheological finishing (MRF) were discussed. Finally, the key problems and research directions of SSD were summarized. (c) 2005 Elsevier GmbH. All rights reserved.

Lattice polarity detection of InN by circular photogalvanic effect

We report an effective and nondestructive method based on circular photogalvanic effect (CPGE) to detect the lattice polarity of InN. Because of the lattice inversion between In- and N-polar InN, the energy band spin splitting is opposite for InN films with different polarities. Consequently under light irradiation with the same helicity, CPGE photocurrents in In- and N-polar layers will have opposite directions, thus the polarity can be detected. This method is demonstrated by our CPGE measurements in both n- and p-type InN films.

A novel technique for predicting ionizing radiation effects of commercial MOS devices

A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

Comparison between double crystals X-ray diffraction micro-Raman measurement on composition determination of high Ge content Si1_xGex layer epitaxied on Si substrate

It is important to acquire the composition of Si1-xGex layer, especially that with high Ge content, epitaxied on Si substrate. Two nondestructive examination methods, double crystals X-ray diffraction (DCXRD) and micro-Raman measurement, were introduced comparatively to determine x value in Si1-xGex: layer, which show that while the two methods are consistent with each other when x is low, the results obtained from double crystals X-ray diffraction are not credible due to the large strain relaxation occurring in Si1-xGex layers when Ge content is higher than about 20%. Micro-Raman measurement is more appropriate for determining high Ge content than DCXRD.

A novel contactless method for characterization of semiconductors: Surface electron beam induced voltage in scanning electron microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices. The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM). The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface. The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64 pf It is large enough for the detection of the induced surface potential. The irradiation mode of electron beam (e-beam) influences the signal generation. When the e-beam irradiates on the surface of semiconductors continuously, a differential signal is obtained. The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection. The polarity of induced potential depends on the structure of potential barriers and surface states of samples. The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.