Propulsion characteristics of wing-in-ground effect dual-foil propulsors

Propulsion characteristics of wing-in-ground effect propulsors were investigated using a comparative analysis of thrust and powering characteristics between wing-in-ground (WIG) effect thrusters and traditional screw propellers. WIG thrusters were found to have constant thrust production and efficiency, nearly independent of speed of advance, as contrary to screw propellers, whose optimum efficiency occurs at only one speed point. To produce the same amount of thrust as equivalent screw propellers, WIG thrusters have to work under heavily loaded operating conditions. WIG thrusters were also found to produce a relatively lower but nearly constant efficiency and thrust, independent of speed. Another distinguishing propulsion characteristic revealed for WIG thrusters is that they are capable of operating at much higher speeds, in a range of three to six times that of screw propellers of the same size. While the speed range of screw propellers is mainly limited by their geometric pitch, the speed range of WIG thrusters has no speed limit in ideal fluid. In reality, the speed range is only limited by viscous drag and cavitation, or compressibility, in water or air, respectively. This suggests a potential for WIG thrusters of higher speed application than screw propellers. An experimental investigation and validation of the propulsion system is warranted. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.

Ultrathin-film growth of para-sexiphenyl (II): Formation of large-size domain and continuous thin film

The large-size domain and continuous para-sexiphenyl (p-6P) ultrathin film was fabricated successfully on silicon dioxide (SiO2) substrate and investigated by atomic force microscopy and selected area electron diffraction. At the optimal substrate temperature of 180 degrees C, the first-layer film exhibits the mode of layer growth, and the domain size approaches 100 mu m(2). Its saturated island density (0.018 mu m(-2)) is much smaller than that of the second-layer film (0.088 mu m(-2)), which begins to show the Volmer-Weber growth mode.

Ultrathin-film growth of para-sexiphenyl (I): Submonolayer thin-film growth as a function of the substrate temperature

The para-sexiphenyl (p-6P) monolayer film induces weak epitaxy growth (WEG) of disk-like organic semiconductors, and their charge mobilities are increased dramatically to the level of the corresponding single crystals [Wang et al., Adv. Mater. 2007, 19, 2168]. The growth behavior and morphology of p-6P monolayer film play decisive roles on WEG. Here, we investigated the growth behavior of p-6P submonolayer film as a function of the substrate temperature. Its growth exhibited two different mechanisms at high and low substrate temperature.

Constructing Thin Polythiophene Film Composed of Aligned Lamellae via Controlled Solvent Vapor Treatment

Thin poly(3-butylthiophene) (P3BT) film composed of aligned lamellae attached to the edge of the original film has been achieved via a controlled solvent vapor treatment (C-SVT) method. The polarized optical microscopy operated at both single-polarization and cross-polarization modes has been used to investigate the alignment of the fiber-like lamellae. A numerical simulation method is used to quantitatively calculate angle distributions of the lamellae deviated from the film growth direction. Prepatterned P3BT film edge acts as nuclei which densely initialize subsequent crystal growth by exhausting the materials transported from the partially dissolved film. The growth of new film upon crystallization is actually a self-healing process where the two-dimensional geometric confinement is mainly responsible for this parallel alignment of P3BT crystals. The solvent vapor pressure should be carefully chosen so as to induce crystal growth but avoid liquid instability which will destroy the continuity of the film.