Development of durable carbon black/titanium dioxide supported macrocycle catalysts for oxygen reduction reaction

Carbon black and titanium dioxide supported iron tetraphenylporphyrin (FeTPP/TiO2/C) catalysts for oxygen reduction reaction (ORR) were prepared by sol-gel and precipitation methods followed by a heat-treatment at temperatures of 400-1000 degrees C. The FeTPP/C and TiO2/C were also studied for comparison. The FeTPP/TiO2/C pyrolyzed at 700 degrees C exhibits significantly improved stability while maintaining high activity towards ORR in comparison with the FeTPP/C counterpart. The electrochemical study combined with XRD, XPS, and SEM/EDX analyses revealed that the appropriate dispersion of TiO2 on the surface of FeTPP/TiO2/C catalysts, which depending on heat-treatment temperature, plays a crucial role in determining the activity and stability of catalysts.

Multilayer structured carbon nanotubes/poly-L-lysine/laccase composite cathode for glucose/O-2 biofuel cell

Multilayer film of laccase, poly-L-lysine (PLL) and multi-walled carbon nanotubes (MWNTs) were prepared by a layer-by-layer self-assembly technique. The results of the UV-vis spectroscopy and scanning electron microscopy studies demonstrated a uniform growth of the multilayer. The catalytic behavior of the modified electrode was investigated. The (MWNTs/PLL/laccase)(n) multilayer modified electrode catalyzed four-electron reduction of O-2 to water, without any mediator.

Perturbational Finite Volume Method For The Solution of 2-D Navier-Stokes Equations on Unstructured and Structured Colocated Meshes

Based on the first-order upwind and second-order central type of finite volume( UFV and CFV) scheme, upwind and central type of perturbation finite volume ( UPFV and CPFV) schemes of the Navier-Stokes equations were developed. In PFV method, the mass fluxes of across the cell faces of the control volume (CV) were expanded into power series of the grid spacing and the coefficients of the power series were determined by means of the conservation equation itself. The UPFV and CPFV scheme respectively uses the same nodes and expressions as those of the normal first-order upwind and second-order central scheme, which is apt to programming. The results of numerical experiments about the flow in a lid-driven cavity and the problem of transport of a scalar quantity in a known velocity field show that compared to the first-order UFV and second-order CFV schemes, upwind PFV scheme is higher accuracy and resolution, especially better robustness. The numerical computation to flow in a lid-driven cavity shows that the under-relaxation factor can be arbitrarily selected ranging from 0.3 to 0. 8 and convergence perform excellent with Reynolds number variation from 102 to 104.

Impact of cathode evaporation on a free-burning arc

A free-burning, high-intensity argon arc at atmospheric pressure was modelled during the evaporation of copper from the cathode. The effect of cathode evaporation on the temperature, mass flow, current flow and Cu concentration was studied for the entire plasma region. The copper evaporates from the tip of the cathode with an evaporation rate of 1 mg s-1. The copper vapour in the cathode region has a velocity of 210 m s-1 with a mass concentration of above 90% within 0.5 mm from the arc axis. The vapour passes from the cathode toward the anode with a slight diffusion in the argon plasma. Higher temperatures and current densities were calculated in the core of the arc caused by the cathode evaporation.

The evolution of intermediate castration virulence and ant coexistence in a spatially structured environment

Theory suggests that spatial structuring should select for intermediate levels of virulence in parasites, but empirical tests are rare and have never been conducted with castration (sterilizing) parasites. To test this theory in a natural landscape, we co

Configural processing of different topologically structured figures: an ERP Study

According to Chen's theory, topological differences are perceived faster than feature differences in early visual perception. We hypothesized that topological perception is caused by the sensitivity in discriminating figures with and without "holes". An E

Organic light emitting diodes using magnesium doped organic acceptor as electron injection layer and silver as cathode

Organic light emitting diodes employing magnesium doped electron acceptor 3, 4, 9, 10 perylenetetracarboxylic dianhydride (Mg: PTCDA) as electron injection layer and silver as cathode were demonstrated. As compared to Mg: Ag cathode, the combination of the Mg: PTCDA layer and silver provided enhanced electron injection into tris (8-quinolinolato) aluminium. The device with 1: 2 Mg: PTCDA and Ag showed an increase of about 12% in the maximum current efficiency, mainly due to the improved hole-electron balance, and an increase of about 28% in the maximum power efficiency, as compared to the control device using Mg: Ag cathode. The properties of Mg: PTCDA composites were studied as well.

Field emission enhancement by the quantum structure in an ultrathin multilayer planar cold cathode

Field electron emission (FE) from an ultrathin multilayer planar cold cathode (UMPC) including a quantum well structure has been both experimentally and theoretically investigated. We found that by tuning the energy levels of UMPC, the FE characteristic can be evidently improved, which is unexplained by conventional FE mechanism. FE emission mechanism, dependent on the quantum structure effect, which supplies a favorable location of electron emission and enhances tunneling ability, has been presented to expound the notable amelioration. An approximate formula, brought forward, can predict the quantum FE enhancement, in which the theoretical prediction is close to the experimental result. (C) 2008 American Institute of Physics.

Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

Field emission (FE) from a single-layer ultra-thin semiconductor film cathode (SUSC) on a metal substrate has been investigated theoretically. The self-consistent quantum FE model is developed by synthetically considering the energy band bending and electron scattering. As a typical example, we calculate the FE properties of ultra-thin A1N film with an adjustable film thickness from 1 to 10 nm. The calculated results show that the FE characteristic is evidently modulated by varying the film thickness, and there is an optimum thickness of about 3 nm. Furthermore, a four-step FE mechanism is suggested such that the distinct FE current of a SUSC is rooted in the thickness sensitivity of its quantum structure, and the optimum FE properties of the SUSC should be attributed to the change in the effective potential combined with the attenuation of electron scattering.

Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions

Nanocrystalline Ge:H thin films were deposited simultaneously on both electrodes of a conventional capacitively coupled reactor for plasma enhanced chemical vapor deposition using highly H-2 diluted GeH4 as the source gas. The structure of the films was investigated by Raman scattering and X-ray diffraction as a function of substrate temperature, H-2 dilution, and r.f. power. The hydrogen concentrations and bonding configurations were determined by infrared absorption spectroscopy. For anodic deposition, the preferred crystallographic orientation and film crystallinity depend rather strongly on the deposition parameters. This dependence can be explained by changing surface mobilities of adsorbed precursors due to changes in the hydrogen coverage of the growing surface. Cathodic deposition is much less sensitive to variations in the deposition parameters. It generally results in films of high crystallinity with randomly oriented crystallizes. Some possible mechanisms for these differences between anodic and cathodic deposition are discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing

VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.