Effects Analysis on the Mechanical Properties of Nanocrystalline Materials

Nanocrystalline materials are characterized by a typical grain size from 1 to 100nm. In order to study the nanocrystalline properties of nanocrystalline materials, we chose nanocrystalline coppers as the research object. The uniaxial tensile deformation of computer produced nanocrystalline coppers is simulated by using molecular dynamics with Finnis-Sinclair potential. The mean grain size of simulated nanocrystalline coppers is varied within the 5.38 to 1.79 nm range. The strength, Young's modulus and stress-strain are strongly depended on the grain size and nanocrystalline structure. The simulated nanocrystalline coppers show a reverse Hall-Petch effect.

The Influence of Grain Size and Temperature on the mechanical Deformation of Nanocrystalline Materials: Molecular Dynamics Simulation

Nanocrystalline (nc) materials are characterized by a typical grain size of 1-100nm. The uniaxial tensile deformation of computer-generated nc samples, with several average grain sizes ranging from 5.38 to 1.79nm, is simulated by using molecular dynamics with the Finnis-Sinclair potential. The influence of grain size and temperature on the mechanical deformation is studied in this paper. The simulated nc samples show a reverse Hall-Petch effect. Grain boundary sliding and motion, as well as grain rotation are mainly responsible for the plastic deformation. At low temperatures, partial dislocation activities play a minor role during the deformation. This role begins to occur at the strain of 5%, and is progressively remarkable with increasing average grain size. However, at elevated temperatures no dislocation activity is detected, and the diffusion of grain boundaries may come into play.

Nonuniformity Effect of Surface-Nanocrystalline Materials in Nanoindentation Test

In the present research, microstructures of the surface-nanocrystalline Al alloy material are observed and measured based on the transmission electron microscopy (TEM) technique, and the corresponding mechanical behaviors are investigated experimentally and theoretically. In the experimental research, the nanoindentation test method is used, and the load and microhardness curves are measured, which strongly depend on the grain size and grain size nonuniformity. Two kinds of the nanoindentation test methods are adopted: the randomly selected loading point method and the continuous stiffness method. In the theoretical modeling, based on the microstructure characteristics of the surface-nanocrystalline Al alloy material, a dislocation pile-up model considering the grain size effect and based on the Mott theory is presented and used. The hardness-indent depth curves are predicted and modeled.

Predictions for Partial-Dislocation-Mediated Processes in Nanocrystalline Ni by Generalized Planar Fault Energy Curves: An Experimental Evaluation

Generalized planar fault energy (GPFE) curves have been used to predict partial-dislocation-mediated processes in nanocrystalline materials, but their validity has not been evaluated experimentally. We report experimental observations of a large quantity of both stacking faults and twins in nc Ni deformed at relatively low stresses in a tensile test. The experimental findings indicate that the GPFE curves can reasonably explain the formation of stacking faults, but they alone were not able to adequately predict the propensity of deformation twinning.

Internal Friction Of Bend-Deformed Nanocrystalline Nickel By Mechanical Spectroscopy

Internal friction of nanocrystalline nickel is investigated by mechanical spectroscopy from 360 K to 120 K. Two relaxation peaks are found when nanocrystalline nickel is bent up to 10% strain at room temperature and fast cooling. However, these two peaks disappear when the sample is annealed at room temperature in vacuum for ten days. The occurrence and disappearance of the two relaxation peaks can be explained by the interactions of partial dislocations and point defects in nanocrystalline materials.

Micromechanics Modeling Of Strength For Nanocrystalline Copper

We present a model in this paper for predicting the inverse Hall-Petch phenomenon in nanocrystalline (NC) materials which are assumed to consist of two phases: grain phase of spherical or spheroidal shapes and grain boundary phase. The deformation of the grain phase has an elasto-viscoplastic behavior, which includes dislocation glide mechanism, Coble creep and Nabarro-Herring creep. However the deformation of grain boundary phase is assumed to be the mechanism of grain boundary diffusion. A Hill self-consistent method is used to describe the behavior of nanocrystalline pure copper subjected to uniaxial tension. Finally, the effects of grain size and its distribution, grain shape and strain rate on the yield strength and stress-strain curve of the pure copper are investigated. The obtained results are compared with relevant experimental data in the literature.

Microstructural evolution and formation of nanocrystalline intermetallic compound during surface mechanical attrition treatment of cobalt

Nanocrystalline intermetallic Co3Fe7 was produced on the surface of cobalt via surface mechanical attrition (SMA). Deformationinduced diffusion entailed the formation of a series of solid solutions. Phase transitions occurred depending on the atomic fraction of Fe in the surface solid solutions: from hexagonal close-packed (<4% Fe) to face-centered cubic (fcc) (4-11% Fe), and from fcc to body-centered cubic (>11% Fe). Nanoscale compositional probing suggested significantly higher Fe contents at grain boundaries and triple junctions than grain interiors. Short-circuit diffusion along grain boundaries and triple junctions dominate in the nanocrystalline intermetallic compound. Stacking faults contribute significantly to diffusion. Diffusion enhancement due to high-rate deformation in SMA was analyzed by regarding dislocations as solute-pumping channels, and the creation of excess vacancies. Non-equilibrium, atomic level alloying can then be ascribed to deformation-induced intermixing of constituent species. The formation mechanism of nanocrystalline intermetallic grains on the SMA surface can be thought of as a consequence of numerous nucleation events and limited growth. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Formation of Single and Multiple Deformation Twins in Nanocrystalline fcc Metals

Deformation twins are often observed to meet each other to form multi-fold twins in nanostructured face-centered cubic (fcc) metals.Here we propose two types of mechanism for the nucleation and growth of four different single and multiple twins. These mechanisms provide continuous generation of twinning partials for the growth of the twins after ucleation. A relatively high stress or high strain rate is needed to activate these mechanisms, making them more prevalent in nanocrystalline materials than in their coarse-grained counterparts.Experimental observations that support the proposed mechanisms are presented.

Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline

A kind of hydrogenated diphasic silicon films has been prepared by a new regime of plasma enhanced chemical vapor deposition (PECVD) near the phase transition regime from amorphous to nanocrystalline. The microstructural properties of the films have been investigated by the micro-Raman and Fourier transformed Infrared (FT-IR) spectra and atom force microscopy (AFM). The obtained Raman spectra show not only the existence of nanoscaled crystallites, but also a notable improvement in the medium-range order of the diphasic films. For the FT-IR spectra of this kind of films, it notes that there is a blueshift in the Si-H stretching mode and a redshift in the Si-H wagging mode in respect to that of typical amorphous silicon film. We discussed the reasons responsible for these phenomena by means of the phase transition, which lead to the formation of a diatomic hydrogen complex, H-2* and their congeries.

Synthesis, reactive mechanism and thermal stability of W1-xAlxC (x=0.33, 0.5, 0.75, 0.86) nanocrystalline

W1-xAlxC (x = 0.33, 0.50, 0.75, 0.86) solid solutions have been synthesized directly by ball-milling tungsten powder, aluminum powder and activated carbon. The structural development of W0.5Al0.5C phase with the milling times up to 160 h has been followed using X-ray diffraction. X-ray photoelectron spectra demonstrate that Al atom takes the place of W. High temperature annealing experiment reveals that Al is stable in hexagonal structure to 1873 K. Transmission electron microscopy image shows that the grain size of the prepared powders is about 5 nm.

纳米晶体微观结构与力学性质的分子动力学模拟

纳米晶体材料是由尺度在1-100nm的微小颗粒组成的体系.该文应用分子动力学结合Finnis-Sinclair多体势函数模拟了纳米晶铜的微观结构和单向拉伸变形,以及纳米铜晶粒的结构与扩散性质,并采用了局部晶序分析、晶向分布函数等多种手段,对它们的结构进行了分析.研究了晶粒尺寸的变化对它们的影响.对纳米晶铜的微观结构的模拟表明：随着晶粒尺寸的减小,纳米晶体的晶界结构变化并不明显,而晶粒内部的晶格畸变加剧,导致其结构的无序度明显增加,并且晶粒内部结构和晶界结构的差别也越来越小;晶粒内部的原子的平均能量明显升高,但界面原子的平均能量变化很小.由于受晶格畸变和晶界比例增加的影响,纳米晶体的密度小于单晶的密度.对纳米晶粒的结构与扩散性质进行了分子动力学模拟的结果显示：随着晶粒尺寸的减小,晶粒表面层包含的原子比例迅速增加,表面层的原子平均能量上升,而晶粒内部的保持不变,但不仍然要高于相应单晶体的值,而表面层的厚度基本为一常数.纳米晶粒的扩散系数随着它的尺寸的增加而迅速减小,虽现指数衰减关系.这种减小主要是由于晶粒的表面层原子比例的减小和这些原子的能量降低有关.表面原子的扩散在晶粒的扩散中占主导的地位.

Synthesis and characterizations of Al-doped Zn0.95Ni0.05O nanocrystals

Nanocrystalline Zn0.95-xNi0.05AlxO (x = 0.01, 0.02, 0.05 and 0.10) diluted magnetic semiconductors have been synthesized by an autocombustion method. X-ray absorption spectroscopy, high-resolution transmission electron microscopy, energy-dispersive spectrometry and Ni 2p core-level photoemission spectroscopy analyses revealed that some of the nickel ions were substituted for Zn2+ into the ZnO matrix while others gave birth to NiO nanoclusters embedded in the ZnO particles. The Zn0.95Ni0.05O sample showed no enhancement of room-temperature ferromagnetism after Al doping. (C) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires

Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm(-1),which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev, 1.42ev, 1.47ev. Possible reason for these is suggested.

纳米晶材料变形行为的微观力学分析

将纳米晶材料视为包括晶粒和晶界的两相复合材料.基于能量平衡概念推导出纳米晶材料的增量本构关系.最后将本文发展的模型用于纯铜的单轴拉伸实验,讨论了晶粒大小、形状和晶粒分布的影响,并将模型预测的结果和已有的实验结果进行比较.

Progress of Si-based nanocrystalline luminescent materials

Si-based nanomaterials are some new photoeletronic and informational materials developed rapidly in recent years, and they have potential applications in the light emitting devices, e. g. Si light emitting diode, Si laser and integrated Si-based photoelectronics. Among them are nano-scale porous silicon (ps), Si nanocrystalline embedded SiO2 (SiOx, x < 2.0) matrices, Si nanoquantum dot and Si/SiO2 superlattice, etc. At present, there are various indications that if these materials can achieve efficient and stable luminescence, which are photoluminescence (PL) and electroluminescence (EL), it is possible for them to lead to a new informational revolution in the early days of the 21st century. In this article, we will mainly review the progress of study on Si-based nanomaterials in the past ten years. The involved contents are the fabricated methods, structural characterizations and light emitting properties. Finally, we predicate the developed tendency of this field in the following ten years.