Analysis of residual stress gradient in MEMS multi-layer structure

Residual stress and its gradient through the thickness are among the most important properties of as-deposited films. Recently, a new mechanism based on a revised Thomas-Fermi-Dirac (TFD) model was proposed for the origin of intrinsic stress in solid film

Residual Stress And Deformation Analysis Of Anodic Bonded Multi-Layer Of Glass And Aluminum

The bonding of glass wafer to aluminum foils in multi-layer assemblies was made by the common anodic bonding process. The bonding was performed at temperatures in the range 350-450 degrees C and with an applied voltage in the range 400-700 V under a pressure of 0.05 MPa. Residual stress and deformation in samples of two-layer (aluminum/glass) and three-layer (glass/aluminum/glass) were analyzed by nonlinear finite element simulation software MARC. The stress and strain varying with cooling time were obtained. The analyzed results show that deformation of the three-layer sample is significantly smaller than that of the two-layer sample, because of the symmetric structure of the three-layer sample. This has an important advantage in MEMS fabrication. The maximum equivalent stresses locate in the transition layer in both samples, which will become weakness in bonded sample.

Design and properties analysis of multi-layer dielectric used in pulse compressor gratings

Used in chirped-pulse amplification system and based on multi-layer thin film stack, pulse compressor gratings (PCG) are etched by ion-beam and holographic techniques. Diffraction efficiency and laser-induced damage threshold rely on the structural parameters of gratings. On the other hand, they depend greatly on the design of multi-layer. A theoretic design is given for dielectric multi-layer, which is exposed at 413.1 nm and used at 1053 nm. The influences of coating design on optical characters are described in detail. The analysis shows that a coating stack of H3L (H2L) (boolean AND) 9H0.5L2.01H meets the specifications of PCG well. And there is good agreement of transmission between experimental and the theoretic design. (c) 2005 Elsevier GmbH. All rights reserved.

Investigation of laser-induced damage on multi-layer dielectric gratings

We investigate mechanisms of laser induced damage thresholds (LIDTs) of multi-layer dielectric gratings (AIDG,). It is found that the laser damage thresholds of MDGs and unstructured dielectric multi-layer coatings (the substrate of MDG) are 3.15J/cm(2) and 9.32 J/cm(2), respectively, at 1064nm (12ns) with the Littrow angle 51.2 degrees and the TEM00 mode. The laser-induced damage mechanism of multi-layer dielectric is presented with the analysis of the following factors: The dominant factor is the pollution on the corrugated surface, which is induced by the complex manufacture process of multi-layer dielectric gratings; another is the electric field distribution along the corrugated surface. The third reason is due to the reduction in stoichiometry of oxide films, resulting from the manufacture process of etching.

Laser induced damage of multi-layer dielectric used in pulse compressor gratings

Laser induced damage threshold (LIDT) of multi-layer dielectric used in pulse compressor gratings (PCG) was investigated. The sample was prepared by e-beam evaporation (EBE). LIDT was detected following ISO standard 11254-1.2. It was found that LIDTs of normal and 51.2 deg. incidence (transverse electric (TE) mode) were 14.14 and 9.31 J/cm2, respectively. A Nomarski microscope was employed to map the damage morphology, and it was found that the damage behavior was pit-concave-plat structure for normal incidence, while it was pit structure for 51.2 deg. incidence with TE mode. The electric field distribution was calculated to illuminate the difference of LIDT between the two incident cases.

Optimization of near-field optical field of multi-layer dielectric gratings for pulse compressor

Multi-layer dielectric (MLD) gratings for pulse compressors in high-energy laser systems should provide high diffraction efficiency as well as high laser induced damage thresholds (LIDT). Nonuniform optical near-field distribution is one of the important factors to limit their damage resistant capabilities. Electric field distributions in the gratings and multi-layer film region are analyzed by using Fourier modal method. Optimization of peak electric field in the gratings ridge is performed with a merit function, including both diffraction efficiency and electric field enhancement when the top layer material is HfO2 and SiO2, respectively. A set of optimized gratings parameters is obtained for each structure, which reduce the peak electric field within the gratings ridge to being respective 1.39 and 1.84 times the value of incident light respectively. Finally, we also discuss the effects of gratings refractive index, gratings sidewall angle and incident angle on peak electric field in the gratings ridge. (c) 2006 Elsevier B.V. All rights reserved.

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)H-9 design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al2O3 between the initial design and an optimized HfO2 top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8 degrees for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2 degrees for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation. (c) 2006 Elsevier B.V. All rights reserved.

Luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates

In this study, we report comparative luminescence properties of multi-layer InGaN quantum dots grown on C- and R-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). High-density InGaN quantum dots (QDs) are formed on GaN templates by decreasing the growth temperature and increasing the adatom hopping-barrier through surface passivation. Atomic force microscopy (AFM) has been employed to estimate the size and height of these dots. Photoluminescence (PL) spectra recorded from (1120) InGaN QDs/(1102) sapphire show much stronger emission intensity compared to spectra recorded from (0001) InGaN QDs/(0001) sapphire. Due to the absence of strong spontaneous polarization and piezoelectric field, such (1150) InGaN QDs in the active layers would lead to high efficiency light emitting devices. (c) 2005 Elsevier B.V. All rights reserved.

Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m

Self-organized InAs quantum dots (QDs) have been fabricated by molecular beam epitaxy and characterized by photoluminescence (PL). For both single- and multi-layer QDs, PL intensity of the first excited state is larger than that of the ground state at 15 K. Conversely, at room temperature (RT), PL intensity of the first excited state is smaller than that of the ground state. This result is explained by the phonon bottleneck effect. To the ground state, the PL intensities of the multi-layer QDs are larger than that of the single-layer QDs at 15 K, while the intensities are smaller than that of the single-layer QDs at RT. This is due to the defects in the multi-layer QD samples acting as the nonradiative recombination centers. The inter-diffusion of Ga and In atoms in the growth process of multi-layer QDs results in the PL blueshift of the ground state and broadening of the full-width at half-maximum (FWHM), which can be avoided by decreasing the spacers' growth temperature. At the spacers' growth temperature of 520degreesC, we have prepared the 5-layer QDs which emit near 1.3 mum with a FWHM of 31.7 meV at RT, and 27.9 meV at 77 K. (C) 2002 Published by Elsevier Science B.V.

Oscillatory Instability of Rayleigh-Marangoni-Benard Convection in Two-Layer System

The convective instabilities in two or more superposed layers heated from below were studied extensively by many scientists due to several interfacial phenomena in nature and crystal growth application. Most works of them were performed mainly on the instability behaviors induced only by buoyancy force, especially on the oscillatory behavior at onset of convection (see Gershuni et. Al.(1982), Renardy et. Al. (1985,2000), Rasenat et. Al. (1989), and Colinet et. Al.(1994)) . But the unstable situations of multi-layer liquid convection will become more complicated and interesting while considering at the same time the buoyancy effect combined with thermocapillary effect. This is the case in the gravity reduced field or thin liquid layer where the thermocapillary effect is as important as buoyancy effect. The objective of this study was to investigate theoretically the interaction between Rayleigh-Bénard instability and pure Marangoni instability in a two-layer system, and more attention focus on the oscillatory instability both at the onset of convection and with increasing supercriticality. Oscillatory behavious of Rayleigh-Marangoni-Bénard convective instability (R-M-B instability) and flow patterns are presented in the two-layer system of Silicon Oil (10cSt) over Fluorinert (FC70) for a larger various range of two-layer depth ratios (Hr=Hupper/Hdown) from 0.2 to 5.0. Both linear instability analysis and 2D numerical simulation (A=L/H=10) show that the instability of the system depends strongly on the depth ratio of two-layer liquids. The oscillatory instability regime at the onset of R-M-B convection are found theoretically in different regions of layer thickness ratio for different two-layer depth H=12,6,4,3mm. The neutral stability curve of the system displaces to right while we consider the Marangoni effect at the interface in comparison with the Rayleigh-Bénard instability of the system without the Marangoni effect (Ma=0). The numerical results show different regimes of the developing of convection in the two-layer system for different thickness ratios and some differences at the onset of pure Marangoni convection and the onset of Rayleigh-Bénard convections in two-layer liquids. Both traveling wave and standing wave were detected in the oscillatory instability regime due to the competition between Rayleigh-Bénard instability and Marangoni effect. The mechanism of the standing wave formation in the system is presented numerically in this paper. The oscillating standing wave results in the competition of the intermediate Marangoni cell and the Rayleigh convective rolls. In the two-layer system of 47v2 silicone oil over water, a transition form the steady instability to the oscillatory instability of the Rayleigh-Marangoni-Bénard Convection was found numerically above the onset of convection for ε=0.9 and Hr=0.5. We propose that this oscillatory mechanism is possible to explain the experimental observation of Degen et. Al.(1998). Experimental work in comparison with our theoretical findings on the two-layer Rayleigh-Marangoni-Bénard convection with thinner depth for H<6mm will be carried out in the near future, and more attention will be paid to new oscillatory instability regimes possible in the influence of thermocapillary effects on the competition of two-layer liquids

Silicon-on-insulating multi-layers for total-dose irradiation hardness

Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multilayer microstructure was investigated by cross-sectional transmission electron microscopy. P-channel metal-oxide-semiconductor (PMOS) transistors and metal-semiconductor-insulator-semiconductor (MSIS) capacitors were produced by these materials. After the irradiated total dose reaches 3 x 10(5) rad (Si), the threshold voltage of the SOIM-based PMOS transistor only shifts 0.07 V, while thin silicon-on-insulating buried-oxide SIMOX-based PMOS transistors have a shift of 1.2V, where SIMOX represents the separated by implanted oxygen. The difference of capacitance of the SOIM-based MSIS capacitors before and after irradiation is less than that of the thin-box SIMOX-based MSIS capacitor. The results suggest that the SOIM materials have a more remarkable irradiation tolerance of total dose effect, compared to the thin-buried-oxide SIMOX materials.

Flow properties of a dusty-gas point source in a supersonic free stream

By using Lagrangian method, the flow properties of a dusty-gas point source in a supersonic free stream were studied and the particle parameters in the near-symmetry-axis region were obtained. It is demonstrated that fairly inertial particles travel along oscillating and intersecting trajectories between the bow and termination shock waves. In this region,formation of "multi-layer structure" in particle distribution with alternating low- and highdensity layers is revealed. Moreover, sharp accumulation of particles occurs near the envelopes of particle trajectories.

Effect of Pb Volatilization on Dielectric Properties of 0.77PbMg1/3(Nb0.9Ta0.1)2/3O3-0.23PbTiO3

Lead magnesium niobate-lead titanate (PMN-PT) is an intriguing candidate for applications in many electronic devices such as multi-layer capacitors, electro-mechanical transducers etc. because of its high dielectric constant, low dielectric loss and high strain near the Curie temperature. As an extension of our previous work on Ta-doped PMNT-PT aimed at optimizing the performance and reducing the cost, this paper focuses on the effect of Pb volatilization on the dielectric properties of 0.77Pb(Mg1/3(Nb0.9Ta0.1)2/3)O3-0.23PbTiO3. The dielectric constant and loss of the samples are measured at different frequencies and different temperatures. The phase purity of this compound is determined by X-ray diffraction pattern. It is found that the volatilization during sintering does influence the phase formation and dielectric properties. The best condition is sintering with 0.5 g extra PbO around a 4 g PMNT-PT sample.

Supersonic dusty-gas flows with Knudsen effect in interphase momentum exchange

On the basis of the two-continuum model of dilute gas-solid suspensions, the dynamic behavior of inertial particles in supersonic dusty-gas flows past a blunt body is studied for moderate Reynolds numbers, when the Knudsen effect in the interphase momentum exchange is significant. The limits of the inertial particle deposition regime in the space of governing parameters are found numerically under the assumption of the slip and free-molecule flow regimes around particles. As a model problem, the flow structure is obtained for a supersonic dusty-gas point-source flow colliding with a hypersonic flow of pure gas. The calculations performed using the full Lagrangian approach for the near-symmetry-axis region and the free-molecular flow regime around the particles reveal a multi-layer structure of the dispersed-phase density with a sharp accumulation of the particles in some thin regions between the bow and termination shock waves.

Observation and modeling for terrestrial processes in alpine meadow

The water-heat transfer process between land and atmosphere in Haibei alpine meadow area has been systematically observed. A multi-layer coupling model for land-atmosphere interaction was presented with special attention paid to the moisture transfer in leaf stomata under unsaturated condition. A profound investigation on the physical process of turbulent transfer inside the vegetation has been performed with a revised formula of water absorption for root system. The present model facilitates the study of vertically distributed physical variables in detail. Numerical simulation was conducted according to the transfer process of Kinesia humility meadow in the area of Haibei Alpine Meadow Ecosystem Station, CAS. The calculated results agree well with observation.