Gal(1-x)Mn(1-x)Sb Grown on GaSb with Mass-Analyzed Low-Energy Dual Ion Beam Deposition

The Ga1-xMnxSb samples were fabricated by the implantation of Mn ions into GaSb (1 0 0) substrate with mass-analyzed low-energy dual ion beam deposition system, and post-annealing. Auger electron spectroscopy depth profile of the Ga1-xMnxSb samples showed

Investigation of Mn-Implanted n-Type Ge

Mn+ irons were implanted to n-type Ge(1 1 1) single crystal at room temperature with an energy of 100 keV and a dose of 3 x 10(16) cm(-2). Subsequently annealing was performed at 400degreesC for 1 h under flowing nitrogen gas. X-ray diffraction measurements show that as-implanted sample is amorphous and the structure of crystal is restored after annealing. Polycrystalline germanium is formed in annealed sample. There are no new phases found except germanium. The samples surface morphologies indicate that annealed sample has island-like feature while there is no such kind of characteristic in as-implanted sample. The elemental composition of annealed sample was analyzed by Auger electron spectroscopy. It shows that manganese ions are deeply implanted into germanium substrate and the highest manganese atomic concentration is 8% at the depth of 120 nm. The magnetic properties of samples were investigated by an alternating gradient magnetometer. The annealed sample shows ferromagnetic behavior at room temperature.

Investigation of Mn-Implanted n-Si by Low-Energy Ion Beam Deposition

Mn ions were implanted to n-type Si(0 0 1) single crystal by low-energy ion beam deposition technique with an energy of 1000 eV and a dose of 7.5 x 10^{17} cm^{-2}. The samples were held at room temperature and at 300degreesC during implantation. Auger electron spectroscopy depth profiles of samples indicate that the Mn ions reach deeper in the sample implanted at 300degreesC than in the sample implanted at room temperature. X-ray diffraction measurements show that the structure of the sample implanted at room temperature is amorphous while that of the sample implanted at 300degreesC is crystallized. There are no new phases found except silicon both in the two samples. Atomic force microscopy images of samples indicate that the sample implanted at 300degreesC has island-like humps that cover the sample surface while there is no such kind of characteristic in the sample implanted at room temperature. The magnetic properties of samples were investigated by alternating gradient magnetometer (AGM). The sample implanted at 300degreesC shows ferromagnetic behavior at room temperature.

Magnetic Properties of Mn-Implanted n-Type Ge

Mn+ ions were implanted into n-type Ge(111) single crystal at room temperature at an energy of 100 keV with a dose of 3 x 1016 cm-2. Subsequent annealing was performed on the samples at 400 °C and 600 °C in a flowing nitrogen atmosphere. The magnetic properties of the samples have been investigated by alternating gradient magnetometer at room temperature. The compositional properties of the annealed samples were studied by Auger electron spectroscopy and the structural properties were analyzed by X-ray diffraction measurements. Magnetization measurements reveal room-temperature ferromagnetism for the annealed samples. The magnetic analysis supported by compositional and structural properties indicates that forming the diluted magnetic semiconductor (DMS) MnxGe1-x after annealing may account for the ferromagnetic behavior in the annealed samples.

Mn implanted GaAs by low energy ion beam deposition

High dose Mn was implanted into semi-insulating GaAs substrate to fabricate embedded ferromagnetic Mn-Ga binary particles by mass-analyzed dual ion beam deposit system at room temperature. The properties of as-implanted and annealed samples were measured with X-ray diffraction, high-resolution X-ray diffraction to characterize the structural changes. New phase formed after high temperature annealing. Sample surface image was observed with atomic force microscopy. All the samples showed ferromagnetic behaviour at room temperature. There were some differences between the hysteresis loops of as-implanted and annealed samples as well as the cluster size of the latter was much larger than that of the former through the surface morphology. (C) 2004 Elsevier B.V. All rights reserved.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

Mn注入n型Ge单晶的特性研究

采用离子能量为100keV,剂量为3×1016cm-2的离子注入技术,室温下往n型Ge(111)单晶衬底注入Mn+离子,注入后的样品进行400℃热处理。利用X-射线衍射法(XRD)和原子力显微镜(AFM)对注入后的样品进行了结构和形貌分析,俄歇电子能谱法(AES)进行了组分分析,交变梯度样品磁强计(AGM)进行了室温磁性测量。结果表明原位注入样品的结构是非晶的,热处理后发生晶化现象。没有在样品中观察到新相形成。Mn离子较深的注入进Ge衬底,在120nm处Mn原子百分比浓度达到最高为8%。热处理后的样品表现出了室温铁磁特性。

Ce：Mn：LiNbO3晶体紫外记录研究

采用紫外光作记录光在Ce：Mn：LiNbO3晶体中实现非挥发全息记录，灵敏度可达0．0803cm／J，衍射效率（固定）为5．07％，比采用红光为记录光，紫外光为敏化光的非挥发双中心记录方案均提高了50多倍。分析表明，采用紫外光作为记录光，深能级电子被激发比例极大提高，参与光折变过程的电子平均运动周期变短．提高了衍射效率和灵敏度；深浅能级电子光栅的同相位，使得固定空间电荷场变强。文中还研究了退火对记录性能的影响。

新型光折变晶体Mn：YAP研究进展

Mn：YAP晶体是近年来发现的一种新型光折变晶体，在三维全息存储方向有广阔的应用前景。总结了Mn：YAP的晶体结构、光谱特征及其光折变模型，分析了它的优点和不足，并对其研究方向提出了设想。

Prescription for optimizing holograms in LiNbO3 : Fe : Mn

The photorefractive holographic dynamics of grating formation in photochromic doubly doped LiNbO3:Fe:Mn crystal is studied numerically and analytically in terms of the two-center model of Kukhtarev Et al. [Ferroelectrics 22, 949 (1979)]. The relations among the recorded and fixed space-charge fields and the doping densities, the oxidation-reduction states of the fields, and the intensities of UV-sensitizing and red recording beams are studied. Important conditions and effects are feued, and an optimal prescription for material doping and oxidation-reduction processing is suggested in which the crystal can be strongly oxidized and the Mn-doping density is smaller than the Fe-doping density. (C) 2000 Optical Society of America. OCIS codes: 050.7330, 190.5330, 090.2900.

双掺杂LiNbO3：Fe：Mn晶体局域光折变体全息光栅形成及衍射特性

将带输运模型与二维耦合波理论相结合，研究了双掺杂LiNbO3：Fe：Mn晶体中由两束有限宽度平面波干涉产生的局域光折变体全息的动力学机制及其衍射特性。采用三步法联立求解了双中心带输运物质波方程和二维耦合波方程。数值计算结果表明，局域光折变体全息光栅的空间电荷场在空间上呈不均匀分布。当光栅区域较小时空间电荷场较强，随着光栅区域的增大，空间电荷场急剧下降，并降低一个数量级。此外，在接近光束入射边界的区域，空间电荷场时空变化规律与一维无限大光折变体全息光栅的结果相似，随着光栅区域的扩大，边界效应对空间电荷场的影

新型光折变晶体Mn：YAlO3的生长与光谱性质研究

采用提拉法成功生长了无散射掺杂0．5％原子分数的Mn：YAlO2（Mn：YAP）光折变单晶体，晶体尺寸约为φ25mm×47mm，原生态晶体呈桔黄色。XRD测试结果表明，Mn：YAP晶体具有与纯YAP相同的结构（Pnma）。但Mn离子掺杂后相应的晶胞参数略有减小。采用ICP方法测试计算得Mn离子在YAlO2晶体中的分凝系数约为0．11。在室温下测试了Mn：YAP晶体的吸收和荧光光谱，并初步分析了Mn：YAP晶体的光谱特征。研究表明Mn：YAP晶体中，Mn^4＋离子充当光折变中心，其吸收和发射峰分别对应于48

Studies of magnetic interactions in Mn-doped β-Ga2O3 from first-principles calculations

The magnetic behavior of Mn-doped beta-Ga2O3 is Studied from first-principles calculations within the generalized gradient approximation method. Calculations show that ferromagnetic ordering is always favorable for configurations in which two Mn ions substitute either tetrahedral or octahedral sites, and the ferromagnetic ground state is also sometimes favorable for configurations where one Mn ion substitutes a tetrahedral site and another Mn ion substitutes an octahedral site. However, the configurations of the latter case are less stable than those of the former. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.