Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations

Based on the density functional theory, we study the magnetic coupling properties of Mn-doped ZnO nanowires. For the nanowires with passivated surfaces, the antiferromagnetic state is found and the Mn atoms have a clustering tendency. When the distance between two Mn atoms is large, the system energetically favors the paramagnetic or spin-glass state. For the nanowires with unpassivated surfaces, the ferromagnetic (FM) coupling states appear between the two nearest Mn atoms, and the zinc vacancies can further stabilize the FM states between them. The electrons with enough concentration possibly mediate the FM coupling due to the negative exchange splitting of conduction band minimum induced by the s-d coupling, which could be useful in nanomaterial design for spintronics. (C) 2008 American Institute of Physics.

Anomalous photoluminescence of InAs quantum dots implanted by Mn ions

The photoluminescence (PL) of Mn-implanted quantum dot (QD) samples after rapid annealing is studied. It is found that the blue shift of the PL peak of the QDs, introduced by the rapid annealing, decreases abnormally as the implantation dose increases. This anomaly is probably related to the migration of Mn atoms to the InAs QDs during annealing, which leads to strain relaxation when Mn atoms enter InAs QDs or to the suppression of the inter-diffusion of In and Ga atoms when Mn atoms surround QDs. Both effects will suppress the blue shift of the QD PL peaks. The temperature dependence of the PL intensity of the heavily implanted QDs confirms the existence of defect traps around the QDs. (c) 2006 Elsevier B.V. All rights reserved.

Investigation of Mn-doped Si films prepared by magnetron cosputtering

Mn-doped Si films were prepared on Si(001) substrates by magnetron cosputtering and post-annealing process. The structural, morphological and magnetic properties of the films have been investigated. X-ray diffraction results show that the as-prepared film is amorphous. By annealing at 800 degrees C, however, the film is crystallized. There is no secondary phase found except Si in the two films. Chemical mapping shows that no segregation of the Mn atoms appears in the annealed film. Atomic force microscopy images of the films indicate that the annealed film has a granular feature that covers uniformly the film surface while there is no such kind of characteristic in the as-prepared film. The field dependence of magnetization was measured using an alternating gradient magnetometer, and it has been indicated that the annealed film shows room-temperature ferromagnetism. (c) 2006 Elsevier B.V. All rights reserved.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance- voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction. From the difference of the lattice constant between the GaSb substrate and the Ga1-xMnxSb epilayer, the Mn content in the Ga1-xMnxSb epilayer were calculated as x = 0.016. The elemental composition of Ga1-xMnxSb epilayer was analyzed by energy dispersive spectrometer. The carrier concentration was obtained by Hall measurement. The hole concentration in the Ga1-xMnxSb epilayer is 4.06 x 10(19)cm(-3). It indicates that most of the Mn atoms in Ga1-xMnxSb take the site of Ga, and play a role of acceptors. The current-voltage curve of the Ga1-xMnxSb/GaSb heterostructure was measured, and the rectifying effect is obvious. (C) 2003 Elsevier B.V. All rights reserved.

Room-temperature ferromagnetic semiconductor MnxGa1-xSb

Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by Xray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capacitance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electrochemical capacitance-voltage profiler reveals that the concentration of p-type carriers in MnxGa1-xSb is as high as 1 X 10(21) cm(-3), indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.

Carrier concentration profiling in magnetic GaMnSb/GaSb investigated by electrochemistry capacitance-voltage profiler

Depth profiles of carrier concentrations in GaMnSb/GaSb are investigated by electrochemistry capacitance-voltage profiler and electrolyte of Tiron. The carrier concentration in GaMnSb/GaSb measured by this method is coincident with the results of Hall and X-ray diffraction measurements. It is indicated that most of the Mn atoms in GaMnSb take the site of Ga, play a role of acceptors, and provide shallow acceptor level(s).

The formation and electronic structures of 3d transition-metal atoms doped in silicon nanowires

Using first-principles methods, we systematically study the mechanism of defect formation and electronic structures for 3d transition-metal impurities (V, Cr, Mn, Fe, and Co) doped in silicon nanowires. We find that the formation energies of 3d transition-metal impurities with electrons or holes at the defect levels always increase as the diameters of silicon nanowires decrease, which suggests that self-purification, i.e., the difficulty of doping in silicon nanowires, should be an intrinsic effect. The calculated results show that the defect formation energies of Mn and Fe impurities are lower than those of V, Cr, and Co impurities in silicon nanowires. It indicates that Mn and Fe can easily occupy substitutional site in the interior of silicon nanowires. Moreover, they have larger localized moments, which means that they are good candidates for Si-based dilute magnetic semiconductor nanowires. The doping of Mn and Fe atom in silicon nanowires introduces a pair of energy levels with t(2) symmetry. One of which is dominated by 3d electrons of Mn or Fe, and the other by neighboring dangling bonds of Si vacancies. In addition, a set of nonbonding states localized on the transition-metal atom with e symmetry is also introduced. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3000445]

Structural characterization of mn implanted AlInN

AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 degrees C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 degrees C and 850 degrees C, respectively. Strong decomposition of the samples took place when annealed at 850 degrees C.

Interlayer segregation of Cu atoms in metal multilayers

The experimental results show that the exchange coupling field H.. of NiFe/FeMn for TalNiFe/FeMn/Ta multilayers is higher than that for the spin valve multilayers Ta/NiFe/Cu/NiFe/FeMn/Ta. The composition and chemical states at the surface of Ta(12nm)/NiFe(7nm), Th(12nm)/NiFe(7nm)/Cu(4nm) and Ta(12nm)/NiFe(7nm)/Cu(3 nm)/NiFe(5 mn) were studied by using x-ray photoelectron spectroscopy. The results show that no element from the underlayers Boats out or segregates to the surface for Th(12 nm)/NiFe(7nm), Ta(12 nm)/NiFe(7nm)/Cu(4 mn). However, Cu atoms segregate to the surface of Ta(12 nm)/NiFe(7nm)/Cu(3nm)/NiFe(5nm) multilayers, i.e. to the NiFe/FeMn interface for Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers. We believe that the presence of Cu atoms at the interface of NiFe/FeMn is one of the important factors which will cause the exchange coupling field H.. of Ta/NiFe/FeMn/Ta multilayers to be higher than that of Ta/NiFe/Cu/NiFe/FeMn/Ta multilayers.

Syntheses and crystal structures of [Mn(H2O)(4)(bpy)]L center dot 4H(2)O, [Mn(H2O)(4)(bpy)]L ' center dot 4H(2)O (H2L = SUCCINIC ACID, H2L ' = FUMARIC ACID)

Reactions of freshly prepared M(OH)(2-2x)(CO3)(x) (.) yH(2)O (M = Mn, Zn) and 4,4'-bipyridine (bpy) with succinic acid (H2L) or famaric acid (H2L') in CH3OH-H2O afforded [Mn(H2O)(4)(bpy)]L (.) 4H(2)O, 1, [Mn(H2O)(4)(bpy)]L' (.) 4H(2)O, 2 and [Zn(H2O)(4)(bpy)]L (.) 4H(2)O, 3. The three coordination polymers are isostructural and consist of (1)(infinity)[M(H2O)(4)(bpy)(2/2)](2+) cationic chains, crystal H2O molecules and dicarboxylate anions (succinate or fumarate anions). Within the chains, the metal atoms are each octahedrally coordinated by four aqua oxygen atoms and two pyridyl nitrogen atoms from two 4,4'-bipyridine ligands. The crystal H2O molecules are hydrogen bonded to dicarboxylate anions to form ribbon-like anionic chains. The cationic and anionic chains are interconnected via hyqrogen bonds to generate a 3D network. Crystal data: 1 triclinic, P (1) over bar, a = 7.235(1), b = 7.749(2), c = 10.020(2) Angstrom, alpha = 79.95(3), beta = 88.79(3), gamma = 71.39(3)degrees, V = 523.9(2) Angstrom(3) and D-cal = 1.494 g cm(-3) for Z = 1; 2 triclinic, P (1) over bar, a = 7.127(1), b = 7.800(2), c = 9.945(2) Angstrom, alpha = 80.26(3), beta = 87.86(3), gamma = 72.69(3)degrees, V = 520.2(2) Angstrom(3) and D-cal = 1.498 g cm(-3) for Z = 1; 3 triclinic, P (1) over bar, a = 7.189(1), b = 7.764(2), c = 9.843(2) Angstrom, alpha = 79.16(3), beta = 87.80(3), gamma = 71.29(3)degrees, V = 510.9(2) Angstrom(3) and D-cal = 1.559 g cm(-3) for Z = 1.

Electrochemical behavior of a series of undecatungstozincates monosubstituted by first-row transition metals, ZnW11M(H2O)O-39(n-) (M = Cr, Mn, Fe, Co, Ni, Cu or Zn)

The electrochemical behavior of a series of undecatungstozincates monosubstituted by first-row transition metals, ZnW11M(H2O)O-39(n-) (M=Cr, Mn, Fe, Co, Ni, Cu or Zn), was investigated systematically and comparably in aqueous solutions by electrochemical and in situ UV-visible-near-IR spectroelectrochemical methods. These compounds exhibit not only successive reduction processes of the addenda atoms (W) in a negative potential range, but some of them also involve redox reactions originating from the substituted transition metals (M) such as the reduction of Fe-III and Cu-II at less negative potentials and the oxidation of Mn-II at a more positive potential. Some interesting results and phenomena, especially of the transition metals, were found for the first time. Moreover, possible reaction mechanisms are proposed based on the experimental results.

A NOVEL METAL THIAMINE COMPLEX WITH A CYCLIC DIMER FORMED BY METAL-BRIDGED 2 THIAMINE LIGANDS - CRYSTAL-STRUCTURE OF [MN(THIAMINE)CL2(H2O)]2[THIAMINE]2CL4.2H2O

The crystal structure of [Mn(thiamine)Cl2(H2O)]2[thiamine]2Cl4.2H2O has been determined by X-ray diffraction methods. The compound contains a cyclic dimer of a complex cation with two thiamine ligands bridged by two Mn(II) ions across a crystallographic center of symmetry. Each Mn(II) is coordinated by two chloride atoms, a water molecule, a N(1') atom of the pyrimidine from a thiamine and an O(53) atom of the hydroxyethyl side chain from another thiamine. There are two free-base thiamine molecules related by a center of symmetry in the unit cell, which form a base-pair through the hydrogen bonds. Both the independent thiamine molecules in the asymmetric unit assume the common F conformation with phi-T = 10.0(9) and 3.6(10) and phi-P = 85.6(7) and 79.6(7), respectively. The compound provides a possible model for a metal-bridged enzyme-coenzyme complex in thiamine catalysis. Crystallographic data: triclinic, space group P1BAR, a = 12.441(4), b = 13.572(4), c = 11.267(3) angstrom, alpha = 103.15(2), beta 89.03(3), gamma = 115.64(2)-degrees, Z = 1, D(calc) = 1.524 g cm-3, and R = 0.050 for 3019 observed reflections with I > 3-sigma(I).