一种基于Messy GA的结构测试数据自动生成方法

结构性测试是标识测试用例的基本方法之一．由于程序语言的复杂性以及被测程序的多样性，自动生成结构测试数据的一种有效方法是根据程序运行结果指导生成过程，通过不断迭代，生成符合要求的测试数据集．提出一种基于Messy GA的结构测试数据自动生成方法，将测试覆盖率表示为测试输入集X的函数F（X），并利用Messy GA不需要染色体模式排列的先验知识即可进行优化求解的性质对F（X）的进行迭代寻优，进一步提高了搜索的并行性，并最终提高测试覆盖率．对一组标准测试程序和若干实际应用程序的实验结果表明，较之现有基于遗传算法的生成方法，该方法能够以更高的效率生成更高质量的测试数据，并适用于较大规模的程序．

Search For Critical Slip Surface In Slope Stability Analysis By Spline-Based Ga Method

The stability of a soil slope is usually analyzed by limit equilibrium methods, in which the identification of the critical slip surface is of principal importance. In this study the spline curve in conjunction with a genetic algorithm is used to search the critical slip surface, and Spencer's method is employed to calculate the factor of safety. Three examples are presented to illustrate the reliability and efficiency of the method. Slip surfaces defined by a series of straight lines are compared with those defined by spline curves, and the results indicate that use of spline curves renders better results for a given number of slip surface nodal points comparing with the approximation using straight line segments.

The magnetic and structure properties of room-temperature ferromagnetic semiconductor (Ga,Mn)N

Diluted magnetic semiconductor (Ga,Mn)N were prepared by the implantation of Mn ions into GaN/Al2O3 substrate. Clear X-ray diffraction peak from (Ga,Mn)N is observed. It indicates that the solid solution (Ga,Mn)N phase was formed with the same lattice structure as GaN and different lattice constant. Magnetic hysteresis-loops of the (Ga,Mn)N were obtained at room temperature (293 K) with the coercivity of about 2496.97 A m(-1). (C) 2003 Elsevier B.V. All rights reserved.

(Ga, Gd, As) film growth on GaAs substrate by low-energy ion-beam deposit

(Ga, Gd, As) film was fabricated by the mass-analyzed dual ion-beam epitaxy system with the energy of 1000 eV at room temperature. There was no new peak found except GaAs substrate peaks (0 0 2) and (0 0 4) by X-ray diffraction. Rocking curves were measured for symmetric (0 0 4) reflections to further yield the lattice mismatch information by employing double-crystal X-ray diffraction. The element distributions vary so much due to the ion dose difference from AES depth profiles. The sample surface morphology indicates oxidizing layer roughness is also relative to the Gd ion dose, which leads to islandlike feature appearing on the high-dose sample. One sample shows ferromagnetic behavior at room temperature. (C) 2003 Elsevier B.V. All rights reserved.

低能离子束制备(Ga,Gd,As)薄膜

室温条件下 ,用离子束外延设备制备 ( Ga,Gd,As)样品 ,X射线衍射 ( XRD)结果表明除了 Ga As衬底峰 ,没有发现其他新相的衍射峰。俄歇电子能谱 ( AES)分析了样品中元素随深度的变化 ,不同样品中元素的分布有着不同的特点。并运用原子力显微镜 ( AFM)研究了样品表面的形貌特点 ,表明样品表面的粗糙度与 Gd注入过程中在样品表面沉积的多少有关。运用交变梯度磁强计 ( AGM)对薄膜进行磁性分析 ,结果表明有的样品在室温条件下出现铁磁性 ,但金属钆本身具有室温铁磁性 ,因而需要进一步分析。

Upconversion and fluorescence spectral studies of Er3+/Yb3+-codoped Bi(2)Q(3)-GeO2-Ga(2)Q(3)-Na2O glasses

The absorption spectra and upconversion fluorescence spectra of Er3+/-Yb3+-codoped natrium-gallium-germanium-bismuth glasses are measured and investigated. The intense green (533 and 549 nm) and red (672 nm) emission bands were simultaneously observed at room temperature. The quadratic dependence of the green and red emission on excitation power indicates that the two-photon absorption processes occur. The influence of Ga2C3 on upconversion intensity is investigated. The intensity of green emissions increases slowly with increasing Ga2O3 content, while the intensity of red emission increases significantly. The possible upconversion mechanisms for these glasses have also been discussed. The maximum phonon energy of the glasses determined based on the infrared (IR) spectral analysis is as low as 740 cm(-1). The studies indicate that Bi2O3-GeO2-Ga2O3-Na2O glasses may be potential materials for developing upconversion optical devices (c) 2006 Published by Elsevier B.V.

Dy^3＋掺杂Ge-Ga-Se硫系玻璃的性质(英文)

实验制备了Dy^3+掺杂Ge-Ga—Se系统硫系玻璃样品，测试了玻璃的密度、显微硬度、可见-红外透射光谱、荧光光谱以及荧光寿命。根据玻璃的密度计算了玻璃的摩尔体积以及致密度。讨论了玻璃的这些性能随系统平均配位数的变化关系。实验结果表明：该系统中配位数大于2．67的玻璃在1．3μm具有较好的发光性能，荧光寿命在440-530μs之间，当玻璃组成位于化学门槛即平均配位数为2．73时玻璃的发光强度最强。

Enhanced luminescence from transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics by Ga2O3 addition

Transparent Ni2+-doped MgO-Al2O3-SiO2 glass ceramics without and with Ga2O3 were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga2O3 addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni2+-doped glass ceramics was largely enhanced by Ga2O3 addition which could mainly be caused by increasing of Ni2+ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga2O3 content was all more than 200 nm. The emission lifetime increased with the Ga2O3 content and the longest lifetime is about 250 mu s. The Ni2+-doped transparent glass ceramics with Ga2O3 addition have potential application as broadband optical amplifier and laser materials. (C) 2007 Elsevier Ltd. All rights reserved.

GeO2 : Bi, M (M = Ga, B) glasses with super-wide infrared luminescence

Broadband infrared luminescence covering the optical telecommunication wavelength region of 0, E and S bands was observed in GeO2: Bi, M (M = Ga, B) glasses prepared by conventional melting-quenching technique. The luminescence with a maximum at around 1320 nm possesses a full width at half maximum larger than 300 nm and mean fluorescent lifetime longer than 500 mus when excited by an 808 nm-laser. These glasses may have potential applications in widely tunable laser and super-broadband optical amplifier for the optical communications. (C) 2005 Elsevier B.V. All rights reserved.

Studies of magnetic interactions in Mn-doped β-Ga2O3 from first-principles calculations

The magnetic behavior of Mn-doped beta-Ga2O3 is Studied from first-principles calculations within the generalized gradient approximation method. Calculations show that ferromagnetic ordering is always favorable for configurations in which two Mn ions substitute either tetrahedral or octahedral sites, and the ferromagnetic ground state is also sometimes favorable for configurations where one Mn ion substitutes a tetrahedral site and another Mn ion substitutes an octahedral site. However, the configurations of the latter case are less stable than those of the former. (c) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

In(Ga)As量子点材料的分子束外延生长性质及激光器的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

等电子杂质Ga 、Sb对InP 中缺陷的影响

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z