Seed-bank development, germination and early seedling survival of two seagrass species from The Netherlands: Zostera marina L. and Zostera noltii hornem

Flowering and seed-bank development of annual Zostera marina L. and perennial Z. noltii hornem. were studied in the Zandkreek (S.W. Netherlands). Flowering of Z. noltii started at the end of June and continued until the end of September. A maximum of ca. 1000 flowering shoots (11% of the total amount of shoots per square metre) occurred in early August. Flowering of Z. marina started at the end of July and continued throughout October. Seed banks of both species appeared to be annual. Actual seed densities of Z. noltii were much lower than predicted on the basis of the amount of inflorescences.Germination was studied in the laboratory in relation to temperature (10, 20 and 30°C), salinity (1.0, 10.0, 20.0, 30.0 and 40.0‰) and stratification (at 4°C). Both species showed a maximal germination at 30°C and 1.0‰ salinity, decreasing with higher salinities and lower temperatures. Stratification stimulated germination only at salinities 20.0‰. Desiccation and anaerobia were lethal to Z. marina seeds. Seedlings of Z. marina survived best at 10°C and 10.0–20.0‰ salinity and those of Z. noltii survived best at 10°C and 1.0‰ salinity. Overall, seedlings of Z. marina survived better than those of Z. noltii.

Research on nitrogen implantation energy dependence of the properties of SIMON materials

With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.

Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.

Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes

Double-crystal X-ray diffraction and I-V characterization have been carried out on the GSMBE grown SiGe/Si p-n heterojunction materials. Results show that the SiGe alloys crystalline quality and the misfit dislocations are critical influences on the reverse leakage current. The crystal perfection and/or the degree of metastability of the Sice alloys have been estimated in terms of the model proposed by Tsao with the experimental results. High-quality p-n heterojunction diodes can be obtained by optimizing the SiGe alloy structures, which limit the alloys in the metastable states. (C) 1999 Elsevier Science B.V. All rights reserved.

Self-organization of the InGaAs GaAs quantum dots superlattice

The mechanism of self-organization of quantum dots (QDs) during the growth of InGaAs/GaAs multilayers on GaAs (1 0 0) was investigated with cross-sectional transmission electron microscopy (XTEM), and double-crystal X-ray diffraction (DCXD). We found that the QDs spacing in the first layer can affect the vertical alignment of QDs. There seems to exist one critical lateral QD spacing, below which merging of QDs with different initial size is found to be the dominant mechanism leading to perfect vertical alignment. Once the critical value of QDs spacing is reached, the InGaAs QDs of the first layer are simply reproduced in the upper layers. The X-ray rocking curve clearly shows two sets of satellite peaks, which correspond to the QDs superlattice, and multi-quantum wells (QW) formed by the wetting layers around QDs. (C) 1999 Elsevier Science B.V. All rights reserved.