Al/a-Si:H界面反应和热处理行为光发射研究

国家自然科学基金

Au、Al/a-Si:H热退火行为研究

于2010-11-23批量导入

稀土对Al-Mg-Si系合金结构和性能的影响

本文用ＸＲＤ和ＳＥＭ方法研究了稀土对Ａｌ－Ｍｇ－Ｓｉ系合金微观结构的影响，同时还测定了这些合金的耐腐蚀及力学性能。结果表明，该体系的稀土铝合金中大约含０．１０％稀土就可以细化组织，提高使用性能。具有很好的应用前景。

稀土对Al-Mg-Si建筑铝型材性能的影响

研究了稀土对Ａｌ－Ｍｇ－Ｓｉ建筑铝型材性能的影响。其微观结构及组成采用金相显微镜、扫描电子显微镜及光电子能谱分析，同时测量了样品的机械强度和耐蚀性能。结果表明其挤压预热温度降至４３０℃，速度达到６．２８～７．３６ｍｍ／ｓ，在Ａｌ－Ｍｇ－Ｓｉ材料中加入适量的稀土可以细化晶粒并且增加了材料的机械强度和耐蚀性能。

稀土对Al-Mg-Si合金性能影响和稀土作用机理研究

本文研究了稀土对铝镁硅合金性能的影响通过添加稀土改善合金的综合性能,提高合金的成品率,表面光泽性和致密度,讨论了稀土对铝镁硅合金的作用机理,为稀土在铝镁硅合金型材中的推广应用提供了有力的实验依据。

Fractal Pattern Formation In Anodic Bonding Of Pyrex Glass/Al/Si

Anodic bonding of Pyrex glass/Al/Si is an important bonding technique in micro/nanoelectromechanical systems (MEMS/NEMS) industry. The anodic bonding of Pyrex 7740 glass/Aluminum film/Silicon is completed at the temperature from 300 degrees C to 375 degrees C with a bonding voltage between 150 V and 450 V. The fractal patterns are formed in the intermediate Al thin film. This pattern has the fractal dimension of the typical two-dimensional diffusion-limited aggregation (2D DLA) process, and the fractal dimension is around 1.7. The fractal patterns consist of Al and Si crystalline grains, and their occurrences are due to the limited diffusion, aggregation, and crystallization of Si and Al atoms in the intermediate Al layers. The formation of the fractal pattern is helpful to enhance the bonding strength between the Pyrex 7740 glass and the aluminum thin film coated on the crystal silicon substrates.

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

~(40)Ar~(10+)轰击Al和Si固体表面形成的200～1000nm光谱

报道了利用兰州重离子加速器国家实验室ECR离子源提供的高电荷态离子~(40)Ar~(10+)入射到Al和p型Si表面所产生的Al,Si,Ar原子的200～1000nm特征光谱的实验测量结果。结果表明,低速高电荷态离子与团体表面原子相互作用可有效地激发靶原子和靶离子的特征谱线,而且由于发射二次电子的无辐射退激与辐射光子退激过程的竞争,使得在p型Si表面上Ar原子的光谱强度总体大于在Al表面上的光谱强度。

以金属为缓冲层在Si（111）上分子束外延GaN及其表征

用电子束蒸发方法在Si（111）衬底上蒸发了Au/Cr和Au/Ti/Al/Ti两种金属缓冲层,然后在金属缓冲层上用气源分子束外延（GSMBE）生长GaN.两种缓冲层的表面都比较平整和均匀,都是具有Au（111）面择优取向的立方相Au层.在Au/Cr/Si（111）上MBE生长的GaN,生长结束后出现剥离.在Au/Ti/Al/Ti/Si（111）上无AlN缓冲层直接生长GaN,得到的是多晶GaN;先在800℃生长一层AlN缓冲层,然后在710℃生长GaN,得到的是沿GaN（0001）面择优取向的六方相GaN.将Au/Ti/Al/Ti/Si（111）在800℃下退火20min,金属层收缩为网状结构,并且成为多晶,不再具有Au（111）方向择优取向.

Large current gain and low operational voltage permeable metal-base organic transistors based on Au/Al double layer metal base

In order to realize the common-emitter characteristics of the tris(8-hydroxyquinoline) aluminium (Alq(3))-based organic transistors, we used Au/Al double metal layer as the base, thus the vertical metal-base transistors with structure of Al/n-Si/Au/Al/Alq(3)/LiF/Al were constructed. It was found that the contact properties between the base and the organic semiconductors play an important role in the device performance. The utilization of Au/Al double layer metal base allows the devices to operate at high gain in the common-emitter and common-base mode at low operational voltage.

Formation of nano-crystalline corrosion products on Zn-Al alloy coating exposed to seawater

Hot dip Zn-Al alloy coating performs better than hot dip galvanized coating and 55% Al-Zn-Si coating as well with regard to general seawater corrosion protection. A characterization of the corrosion products on Zn-Al alloy coating immersed in dynamic aerated seawater has been performed mainly based on transmission electron microscopy (TEM) for morphological analysis and X-ray diffraction (XRD) technique for crystalline phase identification. The XRD and TEM analyses showed that the corrosion products mainly were typical nanometer Zn4CO3(OH)(6).H2O, Zn-5(OH)(8)Cl-2 and Zn6Al2CO3(OH)(16). 4H(2)O microcrystals. This probably is connected to the co-precipitation of Zn2+ and Al3+ ions caused by adsorption. Zn-Al alloy coating being suffered seawater attacks, AI(OH)(3) gel was first produced on the coating surface. Zn and Al hydroxides would co-precipitate and form double-hydroxide when the concentration of adsorbed Zn2+ ions by the newly produced gel exceeded the critical degree of supersaturation of the interphase nucleation. However, because the growth of the crystals was too low to keep in step with the nucleation, a layer of nano-crystalline corrosion products were produced on the surface of the coating finally. (C) 2001 Elsevier Science Ltd. All rights reserved.

Study on growth factors of intermetallic layer within hot-dipped 25% Al-Zn alloy coating on steel

25%Al-Zn alloy coating performs better than hot dip galvanized coating and 55%Al-Zn-Si coating with regard to general seawater corrosion protection. This study deals with the interfacial intermetallic layer's growth, which affects considerably the corrosion resistance and mechanical properties of 25%Al-Zn alloy coatings, by means of three-factor quadratic regressive orthogonal experiments, The regression equation shows that the intermetallic layer thickness decreases rapidly with increasing content of Si added to the Zn-Al alloy bath, increases with rise in bath temperature and prolonging dip time. The most effective factor that determined the thickness of intermetallic layer was the amount of Si added to Zn-Al alloy bath, while the effect of bath temperature and dip time on the thickness of intermetallic layer were not very obvious.