KINETICS OF ION TRANSFER ACROSS LIQUID LIQUID INTERFACE BY CHRONOPOTENTIOMETRY WITH LINEAR CURRENT SCANNING

The equation of the potential-current curve for the ion transfer across the liquid/liquid interface during the linear current scanning has been derived theoretically. A method to calculate the kinetics parameters for the ion transfer by the way of linear current scanning is presented. The transfer of TPAs~+ ions, which is a typical basic electrolyte ion usually used in liquld/liquid interface electrochemistry, was practically investigated at the water/nitrobenzene interface.

ELECTROCHEMICAL STUDY OF ISOPOLY AND HETEROPOLY ANION TRANSFER ACROSS THE WATER NITROBENZENE INTERFACE .2. VANADIUM-CONTAINING HETEROPOLYTUNGSTATE ANIONS

The electrochemical transfer behaviour of vanadium-containing heteropolytungstate anions [PW12-xVxO40]((3+r)-) (x = 1-4) across the water \nitrobenzene interface has been investigated by cyclic voltammetry and chronopotentiometry with cyclic linear current scanning. The transfer of PW11V1O404-, HPW10V2O404-, H2PW10V2O403-, H3PW9V3O403- and H4PW8V4O(40)(3-) across the water \nitrobenzene interface can be observed within the potential window. The effects were observed of pH in the water phase on the transfer behaviour and the formation of vanadium-containing heteropolytungstate anions in solution. Heteropolytungstate anions become more stable due to their involving the vanadium atom. The degree of protonation and the dissociation constant of the trivalent vanadium-containing heteropolytungstate anion of protonation increase with increasing vanadium content. The transfer processes are diffusion-controlled The standard transfer potential, the standard Gibbs energy and the dissociation constant for vanadium-containing heteropolytungstate anions have been obtained and the transfer mechanisms are discussed.

Electrochemical Study of the Transfer of Bis-1:11 Molybdosilicate Heteropolyanion with Dysprosium across the Liquid/Liquid Interface

The transfer of bis-1:11 molybdosilicate heteropolyanion with dysprosium across the water/nitrobenzene interface has been investigated by chronopotentiometry with linear current scanning and cyclic voltammetry. The strandard transfer potential and Gibbs energy estimated from cyclic voltammetry were 0.102V and -39.5kJ.mol(-1), respectively. The kinetic parameters of the transfer were determinated by chronopotentiometry with the linear current scanning.

ELECTROCHEMISTRY OF THE TRANSFER OF ISOPOLY AND HETEROPOLY ANIONS ACROSS THE WATER NITROBENZENE INTERFACE - ISOPOLYTUNGSTATE AND HETEROPOLYTUNGSTATE ANIONS

The transfer behavior of the heteropoly anion [H3PW11O39]4- and the isopoly anion [H2W12O39]4- across the water/nitrobenzene interface was investigated by cyclic voltammetry and chronopotentiometry with linear current scanning. The transfer processes were

ANESTHETIC LIDOCAINE AND DICAINE TRANSFER ACROSS LIQUID LIQUID INTERFACES

Lidocaine transfer across the water/1,2-dichloroethane and the water/nitrobenzene interfaces has been investigated by chronopotentiometry with linear current scanning and cyclic voltammetry. The irreversible hydrolysis occurring in the phase transfer of dicaine at the water/nitrobenzene interface is discussed.

ELECTROCHEMICAL STUDY OF CHOLINE DERIVATIVES TRANSFER ACROSS THE LIQUID LIQUID INTERFACE

Transfer behaviors across the water/nitrobenzene interface were studied for five choline derivatives by chronopotentiometry with linear current scanning, cyclic voltammetry and differential pulse voltammetry. The irreversible hydrolysis reactions coupled to the phase transfer of ions across the water/nitrobenzene interface were observed. The Gibbs energies of the transfer of choline derivatives show the effects of an additive constitution on hydrophobic property of the medicine.

ION TRANSFER OF CHROMAZUROL-S ACROSS THE LIQUID-LIQUID INTERFACE

The ion transfer of 0hromazural S (CAS) across ~he in%erface of W/NB and W/l, 2- ])CE was sgadied by oyclie vol~amme~ry and ehronopoten~iome~ry wibh linear current scanning. The $ransfer mechanism of GAS was proposed in terms of lis eleo~roohemic~l behavior and equilibria of diasocia~ion. The experimental da~a obtained for half-wave po~eniial AoWT~/~ and pH in W phase are in agreemen~ wi~h ~he ~heoretieal equation based on ~he mechanism proposal. The siandard po~engial differences AoWT~ and standa...

ELECTROCHEMICAL TRANSFER OF 12-SILICOTUNGSTATE ANION ACROSS THE WATER NITROBENZENE INTERFACE

It has been firstly found by means of cyclic voltammetry (CV) and chronopotentiometry with linear current-scanning (CLC)that 12-silicotungstate anion (SiW_(12)O_(40)~(4-)) with high charge numbers, large molecular volume and symmetric structure can cross

Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case

Perpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within +/-10 mV and a negative differential velocity effect at a bias of about +/-40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap.

A 16-term error model based on linear equations of voltage and current variables

Formulation of a 16-term error model, based on the four-port ABCD-matrix and voltage and current variables, is outlined. Matrices A, B, C, and D are each 2 x 2 submatrices of the complete 4 x 4 error matrix. The corresponding equations are linear in terms of the error parameters, which simplifies the calibration process. The parallelism with the network analyzer calibration procedures and the requirement of five two-port calibration measurements are stressed. Principles for robust choice of equations are presented. While the formulation is suitable for any network analyzer measurement, it is expected to be a useful alternative for the nonlinear y-parameter approach used in intrinsic semiconductor electrical and noise parameter measurements and parasitics' deembedding.

Effect of nonlinear wave-current interaction on flow fields and hydrodynamic forces

A fifth-order theory for solving the problem of interaction between Stokes waves and exponential profile currents is proposed. The calculated flow fields are compared with measurements. Then the errors caused by the linear superposition method and approximate theory are discussed. It is found that the total wave-current field consists of pure wave, pure current and interaction components. The shear current not only directly changes the flow field, but also indirectly does sx, by changing the wave parameters due to wave-current interaction. The present theory can predict the wave kinematics on shear currents satisfactorily. The linear superposition method may give rise to more than 40% loading error in extreme conditions. When the apparent wave period is used and the Wheeler stretching method is adopted to extrapolate the current, application of the approximate theory is the best.

Spin current diode based on an electron waveguide with spin-orbit interaction

We propose a spin current diode which can work even in a small applied bias condition (the linear-response regime). The prototypal device consists of a hornlike electron waveguide with Rashba spin-orbit interaction, which is connected to two leads with different widths. It is demonstrated that when electrons are incident from the narrow lead, the generated spin conductance fluctuates around a constant value in a wide range of incident energy. When the transport direction is reversed, the spin conductance is suppressed strongly. Such a remarkable difference arises from spin-flipped transitions caused by the spin-orbit interaction. (c) 2008 American Institute of Physics.

Compact universal logic gates realized using quantization of current in nanodevices

This paper proposes novel universal logic gates using the current quantization characteristics of nanodevices. In nanodevices like the electron waveguide (EW) and single-electron (SE) turnstile, the channel current is a staircase quantized function of its control voltage. We use this unique characteristic to compactly realize Boolean functions. First we present the concept of the periodic-threshold threshold logic gate (PTTG), and we build a compact PTTG using EW and SE turnstiles. We show that an arbitrary three-input Boolean function can be realized with a single PTTG, and an arbitrary four-input Boolean function can be realized by using two PTTGs. We then use one PTTG to build a universal programmable two-input logic gate which can be used to realize all two-input Boolean functions. We also build a programmable three-input logic gate by using one PTTG. Compared with linear threshold logic gates, with the PTTG one can build digital circuits more compactly. The proposed PTTGs are promising for future smart nanoscale digital system use.

Buried heterostructure InGaAsP/InP strain-compensated multiple quantum well laser with a native-oxidized InAlAs current blocking layer

An InAlAs native oxide is used to replace the p-n reverse-biased junction in a conventional buried heterostructure InP-based laser. This technique reduces the number of regrowth steps and eliminates leakage current under high-temperature operation. The InAlAs native oxide buried heterostructure (NOBH) laser with strain-compensated InGaAsP/InP multiple quantum well active layers has a threshold current of 5.6 mA, a slope efficiency of 0.23 mW/mA, and a linear power up to 22.5 mW with a HR-coated facet. It exhibits single transverse mode with lasing wavelength at 1.532 mu m. A characteristic temperature (T-0) of 50 K is obtained from the NOBH laser with a nonoptimized oxide layer width. (C) 1998 American Institute of Physics. [S0003-6951(98)01352-7].

Observation of photogalvanic current for interband absorption in InN films at room temperature

The linear and circular photogalvanic effects have been observed in undoped InN films for the interband transition by irradiation of 1060 nm laser at room temperature. The spin polarized photocurrent depends on the degree of polarization, and changes its sip when the radiation helicity changes from left-handed to right-handed. This result indicates the sizeable spin-orbit interaction in the InN epitaxial layer and provides an effective method to generate spin polarized photocurrent and to detect spin-splitting effect in semiconductors with promising applications on spintronics.