Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case
Data(s) |
1996
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Resumo |
Perpendicular transport in a specially designed, doped and weakly coupled GaAs/AlAs superlattice is investigated. A linear current-voltage at a bias within +/-10 mV and a negative differential velocity effect at a bias of about +/-40 mV are observed at low temperatures. The miniband conductance near zero electric field is studied as a function of temperature. It is found that the measured conductance increases slightly as the temperature increases to about 30 K, decreases as the temperature rises from 30 K to 70 K, and then increases strongly above 70 K, indicating the existence of a mobility gap. |
Identificador | |
Idioma(s) |
英语 |
Fonte |
Xu SJ; Liu J; Zheng HZ; Chua SJ; Li YX; Cheng WC; Zhang PH; Yang XP .Temperature dependence of the low-field mobility of a very narrow miniband in the degenerate case ,PHYSICS LETTERS A,1996,212(0):97-102 |
Palavras-Chave | #半导体物理 #NEGATIVE DIFFERENTIAL CONDUCTIVITY #SEMICONDUCTOR SUPERLATTICES #ELECTRICAL TRANSPORT #LOCALIZATION #CONDUCTANCE |
Tipo |
期刊论文 |