1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Characterization of diode-pumped laser operation of a novel Yb : GSO crystal

We report what is believed to be the first demonstration of the laser action of Yb3+ -doped Gd2SiO5 (Yb:GSO) crystal pumped by a 940-nm laser diode at room temperature. The threshold of laser generation is only 0.85 kW/cm(2), which is smaller than the theoretic threshold of Yb:YAG (1.54 kW/cm(2)). The laser wavelength is 1090 mn. With a 2.5% output coupler, the maximum output power is 415 mW under a pump power of 5 W. By using the SESAM, the Q-switched mode locking and CW mode-locked operations are demonstrated.

1ps passively mode-locked laser operation of Na, Yb : CaF2 crystal

Diode-pumped passively mode-locked laser operation of Yb3+,Na+:CaF2 single crystal has been demonstrated for the first time. By using a SESAM ( semiconductor saturable mirror), simultaneous transform-limited 1-ps passively mode-locked pulses, with the repetition rate of 183MHz, were obtained under the self-Q-switched envelope induced by the laser medium. The average output power of 360mW was attained at 1047nm for 3.34W of absorbed power at 976nm, and the corresponding pulse peak power arrived at 27kW, indicating the promising application of Yb3+,Na+-codoped CaF2 crystals in achieving ultra-short pulses and high pulse peak power. (c) 2005 Optical Society of America.

Room-temperature cw and pulsed operation of a diode-end-pumped Tm:YAP laser

We report the continuous-wave and acousto-optical Q-switched operation of a diode-end-pumped Tm:YAP laser. Continuous-wave output power of 3.5 W at 1.99 mu m was obtained under the absorbed pump power of 14 W. Under Q-switched laser operation, the average output power increased from 1.57 W to 2.0 W, with an absorbed pump power of 12.6 W, as the repetition rate increased from 1 kHz to 10 kHz. The maximum Q-switched pulse energy was 1.57 mJ with a repetition rate of 1 kHz. The minimum pulse width was measured to be about 80 ns, corresponding to a peak power of 19.6 kW.

Comparison of laser performances of 5at.% Yb : Gd2xY2(1-x)SiO5 crystals between different cutting directions

We investigate the laser actions of 5at.% Yb:Gd2xY2(1-x)SiO5 (Yb:GYSO; x = 0.1) crystals with different cutting directions, parallel and vertical to the growth axis. Our results show that the cutting direction of the sample plays an astonished role in the laser operation. The sample cut vertically to the growth axis possesses the favourable lasing characteristics. Its output power reaches 3.13W at 1060nm with a slope efficiency of 44.68% when the absorbed pump power is 8.9 W. In contrast, the sample cut parallel reaches only 1.65 W at 1044 nm with a slope elLiciency of 33.76% with absorbed pump power of 7.99 W. The absorption and emission spectra of the two samples are examined and the merit factor M is calculated. Our analysis is in agreement well with the experimental results. The wavelength tuning range of the superior sample covers from 1013.68 nm to 1084.82 nm.

Efficient tunable diode-pumped Yb : LYSO laser

We demonstrated efficient laser action of a new ytterbium-doped oxyorthosilicate crystal Yb:LuYSiO5 ( Yb: LYSO) under high-power diode-pumping. The spectroscopic features and laser performance of the alloyed oxyorthosilicate crystal are compared with those of ytterbium-doped lutetium and yttrium oxyorthosilicates. In the continuous-wave laser operation of Yb: LYSO, a maximal slope efficiency of 96% and output power of 7.8 W were respectively achieved with different pump sources. The Yb: LYSO laser exhibits not only little sensitivity to the pump wavelength drift but also a broad tunability. By using a dispersive prism as the intracavity tuning element, we demonstrated that the continuous-wave Yb: LYSO laser exhibit a continuous tunability in the spectral range of 1014-1091 nm. (c) 2006 Optical Society of America.

Low-threshold diode-pumped Yb3+, Na+: CaF2 self-Q-switched laser

For the first time to our knowledge, the laser performance of Yb3+, Na+-codoped CaF2 single crystals was demonstrated. Self-Q-switched laser operation at 1050nm was observed for 976 nm diode pumping at room temperature. On 5 W of incident power, the repetition rate and width of the self-Q-switched pulses reached 28 kHz and 1.5 mu s, respectively. A maximal slope efficiency of 20.3% and minimal threshold absorbed pump power of 30 mW were respectively achieved with different output couplers, showing the promising application of Yb3+, Na+-codoped CaF2 crystals as compact and efficient solid-state lasers. (C) 2005 Optical Society of America.

Diode-pumped Yb : GSO femtosecond laser

Compact femtosecond laser operation of Yb:Gd2SiO5 (Yb:GSO) crystal was demonstrated under high-brightness diode-end-pumping. A semiconductor saturable absorption mirror was used to start passive mode-locking. Stable mode-locking could be realized near the emission bands around 1031, 1048, and 1088 nm, respectively. The mode-locked Yb: GSO laser could be tuned from one stable mode-locking band to another with adjustable pulse durations in the range 1 similar to 100 ps by slightly aligning laser cavity to allow laser oscillations at different central wavelengths. A pair of SF10 prisms was inserted into the laser cavity to compensate for the group velocity dispersion. The mode-locked pulses centered at 1031 nm were compressed to 343 fs under a typical operation situation with a maximum output power of 396 mW. (c) 2007 Optical Society of America.

Generation of 210 fs laser pulses at 1093 nm by a self-starting mode-locked Yb:GYSO laser

We report the first demonstration, to our knowledge, of the femtosecond laser operation by using a new alloyed Yb:GYSO crystal as the gain medium. With a 5 at. % Yb3+-doped sample and chirped mirrors for dispersion compensation, we obtained pulses as short as 210 fs at the center wavelength of 1093 nm. The average mode-locking power is 300 mW, and the pulse repetition frequency is 80 MHz. (C) 2008 Optical Society of America

Fabrication and performance of an index-coupled DFB laser with sampled grating

An index-coupled DFB laser with a sampled grating has been designed and fabricated. The key concept of the approaches is to utilize the +1st-order reflection of the sampled grating for laser operation, and use a conventional holographic exposure combined with the usual photolithography to form the sampled grating. The typical threshold current of the sampled grating DFB laser is 25 mA, and the optical output is about 10 mW at the injected current of 100 mA. The lasing wavelength of the device is 1.5314 mu m, which is the +1st-order peak of the sampled grating.

High power continuous-wave operation of self-organized In(Ga)As/GaAs quantum dot lasers

Quantum dot (QD) lasers are expected to have superior properties over conventional quantum well lasers due to a delta-function like density of states resulting from three dimensional quantum confinements. QD lasers can only be realized till significant improvements in uniformity of QDs with free of defects and increasing QD density as well in recent years. In this paper, we first briefly give a review on the techniques for preparing QDs, and emphasis on strain induced self-organized quantum dot growth. Secondly, self-organized In(Ga)As/GaAs, InAlAs/GaAlAs and InAs/InAlAs Qds grown on both GaAs and InP substrates with different orientations by using MBE and the Stranski-Krastanow (SK) growth mode at our labs are presented. Under optimizing the growth conditions such as growth temperature, V/III ratio, the amount of InAs, InxGa1-xAs, InxAl1-xAs coverage, the composition x etc., controlling the thickness of the strained layers, for example, just slightly larger than the critical thickness and choosing the substrate orientation or patterned substrates as well, the sheet density of ODs can reach as high as 10(11) cm(-2), and the dot size distribution is controlled to be less than 10% (see Fig. 1). Those are very important to obtain the lower threshold current density (J(th)) of the QD Laser. How to improve the dot lateral ordering and the dot vertical alignment for realizing lasing from the ground states of the QDs and further reducing the Jth Of the QD lasers are also described in detail. Thirdly based on the optimization of the band engineering design for QD laser and the structure geometry and growth conditions of QDs, a 1W continuous-wave (cw) laser operation of a single composite sheet or vertically coupled In(Ga)As quantum dots in a GaAs matrix (see Fig. 2) and a larger than 10W semiconductor laser module consisted nineteen QD laser diodes are demonstrated. The lifetime of the QD laser with an emitting wavelength around 960nm and 0.613W cw operation at room temperature is over than 3000 hrs, at this point the output power was only reduced to 0.83db. This is the best result as we know at moment. Finally the future trends and perspectives of the QD laser are also discussed.

Growth and spectroscopic characteristics of Yb : GSO single crystal

For the first time, a high optical quality 10 at.% Yb3+-doped gadolinium oxyorthosilicate laser crystal Gd2SiO5 (GSO) was grown by the Czochralski (Cz) method. The segregation coefficient of Yb3+ was studied by the inductively coupled plasma atomic emission spectrometer (ICP-AES) method. The crystal structure has monoclinic symmetry with space group P2(1)/c; this was determined by means of an x-ray diffraction analysis. The absorption spectra, fluorescence spectra and fluorescence decay curves of Yb3+ ions in a GSO crystal at room temperature were also studied. Then, the spectroscopic parameters of Yb:GSO were calculated. The advantages of the Yb:GSO crystal include high crystal quality, quasi-four-level laser operating scheme, high absorption cross-sections and particularly broad emission bandwidth (similar to 72 nm). The results indicated that the Yb:GSO crystal seemed to be a very promising laser gain medium in diode-pumped femtosecond laser and tunable solid state laser applications when LD pumped at 940 and 980 nm.

LD抽运Yb:GSO实现1090nm低阈值激光运转

We report what we believe to be the first demonstration of laser operation with a novel laser material of Yb3(+) -doped Gd-2 SiO2 (Yb: GSO) pumped by a laser diode at 940 nm. We obtained a low lasing threshold of 1.27 kW/cm(2) with the center wavelength of 1090 nm, which is lower than the value of 1.53 kW/cm(2) predicted for Yb: YAG. The maximal output power of 360 mW was obtained with a 2% output, which corresponds to a slope efficiency up to 19%.