A dual-wavelength sampled fiber Bragg grating and its application in L-band dual-wavelength erbium-doped fiber lasers

A novel dual-wavelength (DW) sampled fiber Bragg grating (SFBG) is proposed and demonstrated for the first time to the author's best knowledge. This kind of SFBG can realize a DW operation with uniform reflection peaks rather than multiple nonuniform peaks shown in conventional SFBGs. Based on the designed SFBG, we have proposed a novel L-band DW erbium-doped fiber laser, which has such a unique merit that the spacing of the two wavelengths keeps unchanged during tuning laser.

A new empirical model for retrieving sea surface salinity in L band

Sea surface salinity is a key physical parameter in ocean science. It is important in the ocean remote sensing to retrieve sea surface salinity by the microwave probe technology. Based on the in situ measurement data and remote sensing data of the Yellow Sea, we have built a new empirical model in this paper, which can be used to retrieve sea surface salinity of the Yellow Sea by means of the brightness temperature of the sea water at L-band. In this model, the influence of the roughness of the sea surface is considered, and the retrieved result is in good agreement with the in situ measurement data, where the mean absolute error of the retrieved sea surface salinity is about 0.288 psu. This result shows that our model has greater retrieval precision compared with similar models.

Stability against crystallization and spectroscopic properties of Tm3+ doped fluorophosphate glasses

Fluorophosphate glasses with various content of Al(PO3)(3) were prepared. With the increment of Al(PO3)(3) content, density decreases while refractive index increases, and transition temperature, crystallization peak temperature and melt temperature increase which were suggested by differential scanning calorimetry. These glasses exhibit the best stability against crystallization with 7-9 mol'Yo Al(PO3)(3) content. Normalized Raman spectra were used to analyze structure and phonon state. The increment of Al(PO3)(3) content does not affect phonon energy but results in the augment of phonon density. Absorption spectra were measured. H-3(6) -> F-3(4) transition exhibits absorption at L band of the third communication window. Compared with the energy of Tm3+ excited states in other glass system, F-3(4) energy of Tm3+ in these glasses is considerable higher and H-3(4) energy is considerable lower, and it can be predicted that emission band of H-3(4) -> F-3(4) transition is close to the amplified band of gain-shift Tm3+ doped fiber amplifier. Analyses of Judd-Ofelt theory suggest when Al(PO3)(3) content is no more than 7 mol%, Judd-Ofelt parameters Omega(t) and the lifetime of H-3(4) energy level of TM3+ vary little with the increment of Al(PO3)(3) content, and when Al(PO3)(3) content is more than 7 mol%, Omega(2) and Omega(6) increase and radiative lifetime of H-3(4) energy level of Tm3+ drops sharply with the increment of Al(PO3)(3) content. (c) 2006 Elsevier B.V. All rights reserved.

A Broadband Long-Wavelength Superluminescent Diode Based on Graded Composition Bulk InGaAs

A novel unselective regrowth buried heterostructure long-wavelength superluminescent diode （SLD） with a graded composition bulk InGaAs active region is developed by metalorganic vapor phase epitaxy （MOVPE）. At a 150mA injection current, the full width at half maximum of the emission spectrum of the SLD is about 72nm, ranging from 1602 to 1674nm. The emission spectrum is smooth and flat. The ripple of the spectrum is less than 0.3dB at any wavelength from 1550 to 1700nm. An output power of 4.3mW is obtained at a 200mA injection current under continuous-wave operation at room temperature. This device is suitable for the applications of light sources for gas detectors and L-band optical fiber communications.

Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs

A semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (＜0. 7dB),fiber-to-fiber lossless operation current (70～90mA) and a high extinction ratio (＞50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520～1609nm) which nearly covers the spectral region of the whole C band (1525～1565nm)and the whole L band (1570～ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.

Polarizing beam splitter of deep-etched triangular-groove fused-silica gratings

We investigated the use of a deep-etched fused-silica grating with triangular-shaped grooves as a highly efficient polarizing beam splitter (PBS). A triangular-groove PBS grating is designed at a wavelength of 1550 nm to be used in optical communication. When it is illuminated in Littrow mounting, the transmitted TE- and TM-polarized waves are mainly diffracted in the minus-first and zeroth orders, respectively. The design condition is based on the average differences of the grating mode indices, which is verified by using rigorous coupled-wave analysis. The designed PBS grating is highly efficient over the C+L band range for both TE and TM polarizations (> 97.68 %). It is shown that such a triangular-groove PBS grating can exhibit a higher diffraction efficiency, a larger extinction ratio, and less reflection loss than the binary-phase fused-silica PBS grating. (C) 2008 Optical Society of America.

LUMINESCENCE OF DY3+ ENHANCED BY SENSITIZATION

Four types of sensitized luminescence of Dy3+ are reported: (1) by a host having a broad-band spectrum as in Na3Y0.99Dy0.01(VO4)(2); (2) by a sensitizer having a broad-band spectrum as in Ca2B2O5:Dy3+, Bi3+; (3) by a sensitizer having a narrow-band spectrum as in Mg2Gd7.9Dy0.1(SiO4)(6)O-2; (4) by a sensitizer having a broad-band spectrum and energy migration as in Gd compounds such as Ca1.96Pb0.04Gd7.9Dy0.1(SiO4)(6)O-2. The luminescent intensity of Dy3+ can be enhanced in these ways.

Biaxial stress dependence of the electrostimulated near-band-gap spectrum of GaN epitaxial film grown on (0001) sapphire substrate

The biaxial piezospectroscopic coefficient (i.e., the rate of spectral shift with stress) of the electrostimulated near-band-gap luminescence of gallium nitride (GaN) was determined as Pi=-25.8 +/- 0.2 meV/GPa. A controlled biaxial stress field was applied on a hexagonal GaN film, epitaxially grown on (0001) sapphire using a ball-on-ring biaxial bending jig, and the spectral shift of the electrostimulated near-band-gap was measured in situ in the scanning electron microscope. This calibration method can be useful to overcome the lack of a bulk crystal of relatively large size for more conventional uniaxial bending calibrations, which has so far hampered the precise determination of the piezospectroscopic coefficient of GaN. The main source of error involved with the present calibration method is represented by the selection of appropriate values for the elastic stiffness constants of both film and substrate. The ball-on-ring calibration method can be generally applied to directly determine the biaxial-stress dependence of selected cathodoluminescence bands of epilayer/substrate materials without requiring separation of the film from the substrate. (c) 2006 American Institute of Physics.

Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films

The valence band structures of Al-N-codoped [ZnO:(Al, N)] and N-doped (ZnO:N) ZnO films were studied by normal and soft x-ray photoelectron spectroscopy. The valence-band maximum of ZnO:(Al, N) shifts up to Fermi energy level by about 300 meV compared with that of ZnO:N. Such a shift can be attributed to the existence of a kind of Al-N in ZnO:(Al, N), as supported by core level XPS spectra and comparison of modified Auger parameters. Al-N increased the relative quantity of Zn-N in ZnO:(Al, N), while N-N decreased that of Zn-N in ZnO:N. (c) 2006 American Institute of Physics.

VUV and Eu-L-3 edge XANES spectra of europium-doped strontium tetraborate prepared in air

VUV-UV and Eu-L-3 edge XANES spectra were measured for europium-doped strontium tetraborate prepared by solid state reaction at high temperature in air. The VUV-UV spectra show that the host absorption band of (SrBO7)-O-4 appears below 170 nm. The charge transfer band of Eu3+ doped in SrB4O7 is peaked at 272 nm. The 4f-5d transitions of Eu2+ consist of a band peaked at 310 nm with a shoulder at 280 nm and also include the bands peaked at 238 (weak) and 203 (strong) nm. The result of XANES spectrum at Eu-L3 edge of the synthesized sample indicates that Eu3+ and Eu2+ coexist in SrB4O7:Eu prepared in air, which is consistent with the results of the VUV-UV spectra.

Impedance spectrum measurement in liquid/liquid interface electrochemistry .2. Study on the ion transfer at L/L interface by impedance spectrum technique

In this paper we study the ion transfer across the liquid/liquid interface by impedance spectrum technique in the four - electrode system. We present a method of getting the real interfacial impedance curve from the apparent impedance curve obtained in the four - electrode system. A practical kinetics investigation on the transfer of tetramethylammonium ion at the water/nitrobenzene interface was done with the method to verify the validity of the method. The transfer of tetramethylammonium ion at the W/O interface is really a reversible transfer.

Liquid phase epitaxy growth of AlxGayIn1-x-yPzAs1-zGaAs with direct band gap up to 2.0 eV

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

Energy spectrum of two-component Bose-Einstein condensates in optical lattices

With the method of Green's function, we investigate the energy spectra of two-component ultracold bosonic atoms in optical lattices. We End that there are two energy bands for each component. The critical condition of the superfluid-Mott insulator phase transition is determined by the energy band structure. We also find that the nearest neighboring and on-site interactions fail to change the structure of energy bands, but shift the energy bands only. According to the conditions of the phase transitions, three stable superfluid and Mott insulating phases can be found by adjusting the experiment parameters. We also discuss the possibility of observing these new phases and their transitions in further experiments.