Monte Carlo simulation of the grafting of maleic anhydride onto polypropylene at higher temperature

The graft of maleic anhydride (MAH) onto isotactic polypropylene (iPP) initiated by dicumyl peroxide (DCP) at 190 degreesC was studied by means of the Monte Carlo method. The ceiling temperature theory, i.e., no possibility for the homopolymerization of MA-H to occur at higher temperatures, was used in this study. The simulation results show that most MAH monomers were grafted onto the radical chain ends arising from beta scission at a lower MAH concentration, whereas the amount of MAH monomers attached to the tertiary carbons was much larger than that grafted onto the radical chain ends at a higher MAH concentration for various DCP concentrations. This conclusion gives a good interpretation for the disagreement on the grafting sites along a PP chain. Moreover, it was found that the grafting degree increased considerably up to a peak value; thereafter, it decreased continuously with increasing MA-H concentration. The peak shifted in the lower MAH concentration direction and became lower and lower with increasing DCP concentration. When the DCP concentration was below 0.1 wt %, the peak was hardly observed. Those results are in good agreement with the experiments.

Atomistic investigation of the effects of temperature and surface roughness on diffusion bonding between Cu and Al

Molecular dynamics (MD) simulations are carried out to analyze the diffusion bonding at Cu/Al interfaces. The results indicate that the thickness of the interfacial layer is temperature-dependent, with higher temperatures yielding larger thicknesses. At temperatures below 750 K, the interface thickness is found to increase in a stepwise manner as a function of time. At temperatures above 750 K, the thickness increases rapidly and smoothly. When surface roughness is present, the bonding process consists of three stages. In the first stage, surfaces deform under stress, resulting in increased contact areas. The second stage involves significant plastic deformation at the interface as temperature increases, resulting in the disappearance of interstices and full contact of the surface pair. The last stage entails the diffusion of atoms under constant temperature. The bonded specimens show tensile strengths reaching 88% of the ideal Cu/Al contact strength. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Impact of cathode evaporation on a free-burning arc

A free-burning, high-intensity argon arc at atmospheric pressure was modelled during the evaporation of copper from the cathode. The effect of cathode evaporation on the temperature, mass flow, current flow and Cu concentration was studied for the entire plasma region. The copper evaporates from the tip of the cathode with an evaporation rate of 1 mg s-1. The copper vapour in the cathode region has a velocity of 210 m s-1 with a mass concentration of above 90% within 0.5 mm from the arc axis. The vapour passes from the cathode toward the anode with a slight diffusion in the argon plasma. Higher temperatures and current densities were calculated in the core of the arc caused by the cathode evaporation.

Temperature dependence of dark lines in coherent population trapping

We measure the signal amplitude and linewidth of a dark line in coherent population trapping in the Rb vapour cell filled with mixed buffer gas N-2 and Ar as a function of cell temperature. We find that the dark line signal amplitude increases with temperature up to a maximum at 49 degrees C and then drops at higher temperatures due to quenching effects of N-2. The linewidth of the dark line remains basically constant, at 1080 Hz. We also measure the linewidth of the dark line as a function of laser intensity. The linewidth increases linearly with laser intensity. An intrinsic linewidth (FWHM=896 Hz at 3.4 GHz) of the Rb cell is obtained.

Preparation and characterization of hybrid ZnO/ormosils films

Hybrid ZnO/ormosils Elms are prepared by the sol-gel method. A FT-IR spectrometer, 900 UV/VIS/NIR spectrophotometer, atomic force microscope, and ellipsometer are employed to investigate microstructure and optical properties of the films fired at different temperatures. The results show that the films with high transmittance and low surface roughness could be obtained at the heat-treatment temperature of 150 degrees C, the refractive index and thickness of the film are 1.413, 2.11 mu m, respectively. Higher temperatures (350 degrees C, 550 degrees C) change the Elm microstructure severely, and then decrease the transmittance of the films.

LiAlO2衬底上ZnO薄膜的溶胶-凝胶法制备和表征

采用溶胶凝胶法在LiAlO2（302）衬底上制备了ZnO薄膜。用X射线衍射（XRD）和扫描电镜（SEM）对样品的结构和形貌进行了表征。XRD结果表明,随着热处理温度的升高（350℃、450℃、550℃、600℃、800℃）,所得到的薄膜分别为单相ZnAl2O4（350℃）,ZnAl2O4和ZnO的混合相（450℃）以及单相的ZnO（550℃、600℃、800℃）,并且ZnO薄膜C轴择优取向的生长趋势随温度升高相应明显。SEM图像显示,随着热处理温度的升高,ZnO薄膜的粒径相应变大。

Influence of carbon on the thermoluminescence and optically stimulated luminescence of α -Al2O3:C crystals

alpha-Al2O3:C crystal shows excellent thermoluminescence (TL) and optically stimulated luminescence (OSL) properties but the real role carbon plays in this crystal is still not clearly understood so far. In this work, alpha-Al2O3:C crystal doping with different amounts of carbon were grown by the temperature gradient technique, and TL and OSL properties of as-grown crystals were investigated. Additionally, a mechanism was proposed to explain the role of carbon in forming the TL and OSL properties of alpha-Al2O3:C. TL and OSL intensities of as-grown crystals increase with the increasing amount of carbon doping in the crystal, but no shift is found in the glow peak location at 465 K. As the amount of carbon doping in the crystals decreases, OSL decay rate becomes faster. With the increase in heating rate, the integral TL response of as-grown crystals decreases and glow peak shifts to higher temperatures. TL response decrease rate increases with the increasing amount of carbon doping in the crystals. All the TL and OSL response curves of as-grown crystals show linear-sublinear-saturation characteristic, and OSL dose response exhibits higher sensitivity and wider linear dose range than that of TL. The crystal doping with 5000 ppm carbon shows the best dosimetric properties. Carbon plays the role of a dopant in alpha-Al2O3:C crystal and four-valent carbon anions replace the two-valent anions of oxygen during the crystal growth process, and large amounts of oxygen vacancies were formed, which corresponds to the high absorption coefficient of F and F+ centers in the crystals.

Influences of annealing on residual stress and structure of HfO2 films

HfO2 Elms are deposited on BK7 glass substrates by electron beam evaporation. The influences of annealing between 100 degrees C and 400 degrees C on residual stresses and structures of HfO2 films are studied. It is found that little differences of spectra, residual stresses and structures are obtained after annealing at lower temperatures. After annealing at higher temperatures, the spectra shift to short wavelength, the residual stress increases with the increasing annealing temperature. At the same time, the crystallite size increases and interplanar distance decreases. The variations of optical spectra and residual stress correspond to the evolutions of structures induced by annealing.

Effects of temperature and light on the growth and geosmin production of Lyngbya kuetzingii (Cyanophyta)

The effects of temperature and light on the growth and geosmin production of Lyngbya kuetzingii were determined. Of the three temperatures tested, 10, 25 and 35A degrees C, the maximal geosmin concentration and geosmin productivity were yielded at 10A degrees C, while the highest chl a production was observed at 25A degrees C. In the studies on light intensity, the maximal geosmin concentration and geosmin productivity were observed at 10 mu mol m(-2) s(-1), while the highest chl a production was at 20 mu mol m(-2) s(-1). It was suggested that more geosmin was synthesized with lower chl a demand. Meanwhile, the relative amounts of extra- and intracellular geosmin were investigated. Under optimum growth conditions (20 mu mol m(-2) s(-1), 25A degrees C; BG-11 medium), the amounts of extracellular geosmin increased as the growth progressed and reached the maximum in the stationary phase, while the intracellular geosmin reached its maximum value in the late exponential phase, and then began to decline. However, under the low temperature (10A degrees C) or light (10 mu mol m(-2) s(-1)) conditions, more intracellular geosmin was synthesized and mainly accumulated in the cells. The proportions of extracellular geosmin were high, to 33.33 and 32.27%, respectively, during the stationary phase at 35A degrees C and 20 mu mol m(-2) s(-1). It was indicated that low temperature or light could stimulate geosmin production and favor the accumulation of geosmin in cells, while more intracellular geosmin may be released into the medium at higher temperatures or optimum light intensity.

Effects of desiccation and CO2 concentrations on emersed photosynthesis in Porphyra haitanensis (Bangiales, Rhodophyta), a species farmed in China

The effects on photosynthesis of CO, and desiccation in Porphyra haitanensis were investigated to establish the effects of increased atmospheric CO2 on this alga during emersion at low tides. With enhanced desiccation, net photosynthesis, dark respiration, photosynthetic efficiency, apparent carboxylating efficiency and light saturation point decreased, while the light compensation point and CO2 compensation point increased. Emersed net photosynthesis was not saturated by the present atmospheric CO2 level (about 350 ml m(-3)). and doubling the CO2 concentration (700 ml m(-3)) increased photosynthesis by between 31% and 89% at moderate levels of desiccation. The relative enhancement of emersed net photosynthesis at 700 ml m(-3) CO2 was greater at higher temperatures and higher levels of desiccation. The photosynthetic production of Porphyra haitanensis may benefit from increasing atmospheric CO2 concentration during emersion.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

MOCVD growth of InN using a GaN buffer

We have investigated MOCVD growth of InN oil sapphire with and without a GaN buffer between 490 and 520 degrees C. The buffer significantly improves the surface morphological uniformity and electrical properties of InN epilayers. Characterization of the as-grown epilayers with the buffer reveals that kinetics-limited islands are formed at lower temperatures, whereas islands with equilibrium shape are obtained at higher temperatures. Below 520 degrees C, increasing temperature improves structural quality but degrades electrical properties. Hall data from this study Suggest that V-N-related defects/impurities are the possible donor species and compensation varies with charged dislocation acceptors. We believe that reducing carrier concentration and dislocation density is effective to increase the Hall mobility of InN. (C) 2007 Elsevier Ltd. All rights reserved.

Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells

Optical transient current spectroscopy (OTCS), photoluminescence (PL) spectroscopy and excitonic electroabsorption spectroscopy have been used to investigate the evolution of defects in the low-temperature grown GaAs/AlGaAs multiple quantum well structures during the postgrowth rapid thermal annealing. The sample was grown at 350 degrees C by molecular beam epitaxy on miscut (3.4 degrees off (001) towards (111)A) (001) GaAs substrate. After growth, the sample was subjected to 30s rapid thermal annealing in the range of 500-800 degrees C. It is found that the integrated PL intensity first decreases with the annealing temperature, then gets a minimum at 600 degrees C and finally recovers at higher temperatures. OTCS measurement shows that besides As,, antisites and arsenic clusters, there are several relatively shallower deep levels with excitation energies less than 0.3 eV in the as-grown and 500 degrees C-annealed samples. Above 600 degrees C, OTCS signals from As,, antisites and shallower deep levels become weaker, indicating the decrease of these defects. It is argued that the excess arsenic atoms group together to form arsenic clusters during annealing. (C) 2000 Elsevier Science B.V. All rights reserved.

Fermi-edge singularity observed in a modulation-doped AlGaN/GaN heterostructure

In this letter, we report on the observation of Fermi-edge singularity in a modulation-doped AlGaN/GaN heterostructure grown on a c-face sapphire substrate by NH3 source molecular beam epitaxy. The two-dimensional electron gas (2DEG) characteristic of the structure is manifested by variable temperature Hall effect measurements down to 7 K. Low-temperature photoluminescence (PL) spectra show a broad emission band originating from the recombination of the 2DEG and localized holes. The enhancement in PL intensity in the high-energy side approaching Fermi level was observed at temperatures below 20 K. At higher temperatures, the enhancement disappears because of the thermal broadening of the Fermi edge. (C) 1998 American Institute of Physics. [S0003-6951(98)02543-1].

Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy

ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 degrees C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 degrees C. The ZnTe epilayer grown at 360 degrees C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.