Flow Characteristics of Liquids in Microtubes Driven by a High Pressure

The flow characteristics of liquids in microtubes driven by a high pressure ranging from 1 MPa to 30 MPa are studied in this paper. The diameter of the microtube is from 3 μm to 10 μm and liquids composed of simple small molecules are chosen as the working fluids. The Reynolds number ranges from 0. 1 to 24. The behavior of isopropanol and carbon tetrachloride under high pressure is found different from the prediction from conventional Hagen-Poiseuille (HP) equation. The normalized friction coefficient C* increases significantly with the pressure. From an analysis of the microtube deformation, liquid compressibility, viscous heating and wall slip, it may be seen that the viscosity at high pressure plays an important role here. An exponential function of viscosity vs pressure is introduced into the HP equation to counteract the difference between experimental and theoretical values. However, this difference is not so marked for di-water.

Melting and Crystallization of Nd60Al10Fe20Co10 Bulk Metallic Glass under High Pressure

Crystallization, melting and structural evolution upon crystallization in Nd60Al10Fe20Co10 bulk metallic glass (BMG) are in situ investigated by x-ray diffraction with synchrotron radiation under high pressure. It is found that the crystallization is pressure promoted, while themelting is inhibited. The crystallization and melting process are also changed under high pressure. The features of the crystallization and melting under high pressure are discussed.

Microstructure and mechanical properties of copper subjected to high pressure torsion

Experiments were conducted on copper subjected to High Pressure Torsion to investigate the evolution of microstructure and microhardness with shear strain, gamma. Observations have been carried out in the longitudinal section for a proper demonstration of the structure morphology. An elongated dislocation cell/subgrain structure was observed at relatively low strain level. With increasing strain, the elongated subgrains transformed into elongated grains and finally into equiaxed grains with high angle grain boundaries. Measurements showed the hardness increases with increasing gamma then tends to saturations when gamma >5. The variation tendency of microhardness with gamma can be simulated by Voce-type equation.

Microscopic Model Of Nano-Scale Particles Removal In High Pressure Co2-Based Solvents

A physical model is presented to describe the kinds of static forces responsible for adhesion of nano-scale copper metal particles to silicon surface with a fluid layer. To demonstrate the extent of particle cleaning, Received in revised form equilibrium separation distance (ESD) and net adhesion force (NAF) of a regulated metal particle with different radii (10-300 nm) on the silicon surface in CO2-based cleaning systems under different pressures were simulated. Generally, increasing the pressure of the cleaning system decreased the net adhesion force between spherical copper particle and silicon surface entrapped with medium. For CO2 + isopropanol cleaning system, the equilibrium separation distance exhibited a maximum at temperature 313.15 K in the Equilibrium separation distance regions of pressure space (1.84-8.02 MPa). When the dimension of copper particle was given, for example, High pressure 50 nm radius particles, the net adhesion force decreased and equilibrium separation distance increased with increased pressure in the CO2 + H2O cleaning system at temperature 348.15 K under 2.50-12.67 MPa pressure range. However, the net adhesion force and equilibrium separation distance both decreased with an increase in surfactant concentration at given pressure (27.6 or 27.5 MPa) and temperature (318 or 298 K) for CO2 + H2O with surfactant PFPE COO-NH4+ or DiF(8)-PO4-Na+. (C) 2008 Elsevier B.V. All rights reserved.

Numerical Study On Transient Flow In The Deep Naturally Fractured Reservoir With High Pressure

According to the experimental results and the characteristics of the pressure-sensitive fractured formation, a transient flow model is developed for the deep naturally-fractured reservoirs with different outer boundary conditions. The finite element equations for the model are derived. After generating the unstructured grids in the solution regions, the finite element method is used to calculate the pressure type curves for the pressure-sensitive fractured reservoir with different outer boundaries, such as the infinite boundary, circle boundary and combined linear boundaries, and the characteristics of the type curves are comparatively analyzed. The effects on the pressure curves caused by pressure sensitivity module and the effective radius combined parameter are determined, and the method for calculating the pressure-sensitive reservoir parameters is introduced. By analyzing the real field case in the high temperature and pressure reservoir, the perfect results show that the transient flow model for the pressure-sensitive fractured reservoir in this paper is correct.

Preliminary study on the photoproduction of hydroxyl radicals in aqueous solution with Aldrich humic acid, algae and Fe(III) under high-pressure mercury lamp irradiation

Under a high-pressure mercury lamp (HPML) and using an exposure time of 4 h, the photoproduction of hydroxyl radicals ((OH)-O-.) could be induced in an aqueous solution containing humic acid (HA). Hydroxyl radicals were determined by high-performance liquid chromatography using benzene as a probe. The results showed that (OH)-O-. photoproduction increased from 1.80 to 2.74 muM by increasing the HA concentration from 10 to 40 mg L-1 at an exposure time of 4 h (pH 6.5). Hydroxyl radical photoproduction in aqueous solutions of HA containing algae was greater than that in the aqueous solutions of HA without algae. The photoproduction of (OH)-O-. in the HA solution with Fe(111) was greater than that of the solution without Fe(III) at pH ranging from 4.0 to 8.0. The photoproduction of (OH)-O-. in HA solution with algae with or without Fe(111) under a 250 W HPML was greater than that under a 125 W HPML. The photoproduction of (OH)-O-. in irradiated samples was influenced by the pH. The results showed that HPML exposure for 4 h in the 4-8 pH range led to the highest (OH)-O-. photoproduction at pH 4.0.

First-principles study of ground-state properties and high pressure behavior of ThO2

The mechanical properties, electronic structure and phonon dispersion of ground state ThO2 as well as the structure behavior up to 240 GPa are studied using first-principles density-functional theory. Our calculated elastic constants indicate that both the ground-state fluorite structure and high pressure cotunnite structure of ThO2 are mechanically stable. The bulk modulus, shear modulus, and Young's modulus of cotunnite ThO2 are all smaller by approximately 25% compared with those of fluorite ThO2. The Poisson's ratios of both structures are approximately equal to 0.3 and the hardness of fluorite ThO2 is 22.4 GPa. The electronic structure and bonding nature of fluorite ThO2 are fully analyzed, and show that the Th-O bond displays a mixed ionic/covalent character. The phase transition from the fluorite to cotunnite structure is calculated to occur at the pressure of 26.5 GPa, consistent with recent experimental measurement by ldiri et al. [1]. For the cotunnite phase it is further predicted that an isostructural transition takes place in the pressure region of 80-130 GPa.

High rate deposition of microcrystalline silicon films by high-pressure radio frequency plasma enhanced chemical vapor deposition (PECVD)

Hydrogenated microcrystalline silicon (mu c-Si:H) thin films were prepared by high-pressure radio-frequency (13.56 MHz) plasma enhanced chemical vapor deposition (rf-PECVD) with a screened plasma. The deposition rate and crystallinity varying with the deposition pressure, rf power, hydrogen dilution ratio and electrodes distance were systematically studied. By optimizing the deposition parameters the device quality mu c-Si:H films have been achieved with a high deposition rate of 7.8 angstrom/s at a high pressure. The V-oc of 560 mV and the FF of 0.70 have been achieved for a single-junction mu c-Si:H p-i-n solar cell at a deposition rate of 7.8 angstrom/s.

Structural phase transformations of ZnS nanocrystalline under high pressure

In-situ energy dispersive x-ray diffraction on ZnS nanocrystalline was carried out under high pressure by using a diamond anvil cell. Phase transition of wurtzite of 10 nm ZnS to rocksalt occurred at 16.0 GPa, which was higher than that of the bulk materials. The structures of ZnS nanocrystalline at different pressures were built by using materials studio and the bulk modulus, and the pressure derivative of ZnS nanocrystalline were derived by fitting the equation of Birch-Murnaghan. The resulting modulus was higher than that of the corresponding bulk material, which indicates that the nanomaterial has higher hardness than its bulk materials.

In-situ resistivity measurement of ZnS in diamond anvil cell under high pressure

An effective method is developed to fabricate metallic microcircuits in diamond anvil cell (DAC) for resistivity measurement under high pressure. The resistivity of nanocrystal ZnS is measured under high pressure up to 36.4 GPa by using designed DAC. The reversibility and hysteresis of the phase transition are observed. The experimental data is confirmed by an electric current field analysis accurately. The method used here can also be used under both ultrahigh pressure and high temperature conditions.

High-pressure study of optical transitions in strained In0.2Ga0.8As/GaAs multiple quantum wells

We have measured low-temperature photoluminescence (PL) and absorption spectra of In0.2Ga0.8As/GaAs multiple quantum wells (MQW's) under hydrostatic pressures up to 8 GPa. In PL, only a single peak is observed below 4.9 GPa corresponding to the n = 1 heavy-hole (HH) exciton in the InxGa1-xAs wells. Above 4.9 GPa, new PL lines related to X-like conduction band states appear. They are assigned to the type-II transition from the X(Z) states in GaAs to the HH subband of the InxGa1-xAs wells and to the zero-phonon line and LO-phonon replica of the type-I transition involving the X(XY) valleys of the wells. In addition to absorption peaks corresponding to direct exciton transitions in the wells, a new strong absorption feature is apparent in spectra for pressures between 4.5 and 5.5 GPa. This absorption is attributed to the pseudodirect transition between the HH subband and the X, state of the wells. This gives clear evidence for an enhanced strength of indirect optical transitions due to the breakdown of translational invariance in MQW structures. From experimental level splittings we determine the valence band offset and the shear deformation potential for X states in the In0.2Ga0.8As layer.

Photoluminescence of GaInP under high pressure

Photoluminescence of GaInP under hydrostatic pressure is investigated. The Gamma valley of disordered GaInP shifts sublinearly upwards with respect to the top of the valence band with increasing pressure and this sublinearity is caused by the nonlinear relationship between lattice constant and hydrostatic pressure. The Gamma valleys of ordered GaInP rise more slowly than that of the disordered one and the relationship between the band gap and the pressure can not be explained in the same way. Taking into account the interactions between the Gamma valley and the folded L valleys, as well as, the X valleys, the experimental pressure dependences of the band gap of ordered GaInP epilayers are calculated and fitted quite well using first order perturbation theory. The results indicate that simultaneous ordering along [111] and [100] directions can occur in ordered GaInP. (C) 1996 American Institute of Physics.

HIGH-PRESSURE STUDY OF GAMMA-X MIXING IN INAS/GAAS QUANTUM DOTS

We have measured low-temperature photoluminescence spectra of InAs quantum dots embedded in a GaAs crystalline matrix under hydrostatic pressures up to 7 GPa. Below 4.2 GPa the spectra are dominated by the Gamma-like electron-heavy hole (HH) exciton transition in the InAs dots. Above 4.2 GPa the spectra show two X-related luminescence bands which are attributed to the indirect type-I transition between X(Xy) and HH states of the dots and the type-II transition from X states in GaAs to InAs HH states, respectively. In the Gamma-X crossover regime we find evidence for a pronounced mixing interaction between InAs Gamma-like and GaAs X-like states. The corresponding interaction potential is estimated to be 9 meV.