Analysis of strip electric saturation model of crack problem in piezoelectric materials

This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing

SiO2-TiO2 sol-gel films are deposited on SiO2/Si by dip-coating technique. The SiO2-TiO2 strips are fabricated by laser direct writing using all ytterbium fiber laser and followed by chemical etching. Surface structures, morphologies and roughness of the films and strips are characterized. The experimental results demonstrate that the SiO2-TiO2 sol-gel film is loose in Structure and a shrinkage concave groove forms if the film is irradiated by laser beam. The surface roughness of both non-irradiated and laser irradiated areas increases with the chemical etching time. But the roughness of laser irradiated area increases more than that of non-irradiated area under the same etching time. After being etched for 28 s, the surface roughness value of the laser irradiated area increases from 0.3 nm to 3.1 nm.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)

Test strip detectors of 125 mu m, 500 mu m, and 1 mm pitches with about 1 cm(2) areas have been made on medium-resistivity silicon wafers (1.3 and 2.7 k Ohm cm). Detectors of 500 mu m pitch have been tested for charge collection and position precision before and after neutron irradiation (up to 2 x 10(14) n/cm(2)) using 820 and 1030 nm laser lights with different beam-spot sizes. It has been found that for a bias of 250 V a strip detector made of 1.3 k Ohm cm (300 mu m thick) can be fully depleted before and after an irradiation of 2 x 10(14) n/cm(2). For a 500 mu m pitch strip detector made of 2.7 k Ohm cm tested with an 1030 nm laser light with 200 mu m spot size, the position reconstruction error is about 14 mu m before irradiation, and 17 mu m after about 1.7 x 10(13) n/cm(2) irradiation. We demonstrated in this work that medium resistivity silicon strip detectors can work just as well as the traditional high-resistivity ones, but with higher radiation tolerance. We also tested charge sharing and position reconstruction using a 1030 nm wavelength (300 mu m absorption length in Si at RT) laser, which provides a simulation of MIP particles in high-physics experiments in terms of charge collection and position reconstruction, (C) 1999 Elsevier Science B.V. All rights reserved.

Multi-strip MRPCs for FOPI

During the last years FOPI has developed a new ToF system as an upgrade of the existing detector based on Multi-strip Multi-gap Resistive Plate Chambers (MMRPCs). The intention is to increase the charged Kaon identification up to a laboratory momentum of 1 GeV/c and to enhance the azimuthal detector granularity. The new ToF barrel has an active area of 5 m(2) with 2400 individual strips (900 x 1.6 mm(2)) [A. Schuttauf, et al., Nucl. Phys. B 158 (2006) 52] which are read out on both sides by a custom designed electronics [M. Ciobanu, et al., IEEE Trans. Nucl. Sci. NS-54 (4) (2007) 1201; K. Koch, et al., IEEE Trans. Nucl. Sci. NS-52(3) (2005) 745]. To reach the envisaged goal a time resolution of 100 ps is needed, at a flight path of 1-1.3 m. Due to the rare production of the K- at SIS energies the efficiency of the MMRPCs has to be above 95%. We report on measurements with the detectors and electronics from the mass production line. For this purpose we used a proton beam at 2.0 and 1.25 GeV, at rates between 0.1 and 5 kHz/cm(2) to determine the timing, efficiency and rate capability of the MMRPCs

Flow injection electrochemical enzyme immunoassay based on the use of an immunoelectrode strip integrate immunosorbent layer and a screen-printed carbon electrode

A flow injection amperometric immunoassay system based on the use of screen-printed carbon electrode for the detection of mouse IgG was developed. An immunoelectrode strip, on which an immunosorbent layer and screen-printed carbon electrode were integrated, and a proposed flow cell have been fabricated. The characterization of the flow immunoassay system and parameters affecting the performance of the immunoassay system were studied and optimized. Amperometric detection at 0.0 V (versus Ag/AgCl) resulted in a linear detection range of 30-700 ng ml(-1), with a detection limit of 3 ng ml(-1). The signal variation among electrode strips prepared from variant batch did not exceed 8.5% (n = 7) by measuring 0.5 mug ml(-1) antigen standard solution.

Morphological Evolution During Synthesis of New AlPO4 Center dot H2O Crystal

A new crystal of aluminophosphate, AIPO(4)(.)H(2)O, is synthesized from two-batch aqueous solution under hydrothermal conditions. Three types of the crystal habits, i.e. the tetragonal double pyramid, the tetragonal prism and the plate-type tetragonal prism, are found from batch-A solution. Two types of the crystal habits, i.e. the hexagonal pyramid and the strip-type tetragonal prism, are found from batch-B solution. The change of crystal morphology is originated from the fluctuation of the synthesis conditions, such as the supersaturation, the temperature and the impurity content. It causes change of the step energies, the defect density and the step roughness, and further, change of the growth rates. Since the crystal morphology is sensitive to the mass transport mechanism, the crystal habits could be changed under the microgravity.

Control of Mean and Fluctuating Forces on a Circular Cylinder at High Reynolds Numbers

A narrow strip is used to control mean and fluctuating forces on a circular cylinder at Reynolds numbers from 2.0 x 10(4) to 1.0 x 10(5). The axes of the strip and cylinder are parallel. The control parameters are strip width ratio and strip position characterized by angle of attack and distance from the cylinder. Wind tunnel tests show that the vortex shedding from both sides of the cylinder can be suppressed, and mean drag and fluctuating lift on the cylinder can be reduced if the strip is installed in an effective zone downstream of the cylinder. A phenomenon of mono-side vortex shedding is found. The strip-induced local changes of velocity profiles in the near wake of the cylinder are measured, and the relation between base suction and peak value in the power spectrum of fluctuating lift is studied. The control mechanism is then discussed from different points of view.

Control Of Vortex Shedding From A Square Cylinder

Small circular, square, and thin-strip cross-sectional elements are used to suppress vortex shedding from a square cylinder at Reynolds numbers in the range of 1.12 x 10(4)-1.02 x 10(5). The axes of the element and cylinder are parallel. The element's size, position, and angle of attack are varied. Measurements of the fluctuating surface pressures and wake velocities, together with smoke flow visualization, show that vortex shedding from both sides of the cylinder is suppressed and the mean drag and fluctuating lift on the cylinder is reduced if the element is installed in an effective zone downstream of the cylinder. The effective zone of the circular element is shown to be much smaller than those of the other elements. The effects of Reynolds number and blockage ratio are investigated. A phenomenon of monoside vortex shedding is observed. The role of the element's bluffness is investigated and the suppression mechanism is discussed.

Complex stress functions and plastic zone sizes for notch cracks subjected to various loading conditions

In this paper, the conformal mapping method is used to solve the plane problem of an infinite plate containing a central lip-shaped notch subjected to biaxial loading at a remote boundary or a surface uniform pressure on the notch. The stress intensity factors KI and KII are obtained by the derived complex stress functions. The simple analytical expressions can be applied to the situation of cracks originating from a circular or an elliptical notch. The plastic zone sizes for such notch cracks are subsequently evaluated in light of the Dugdale strip yield concept. The results are consistent with available numerical data.

Vertical Bearing Capacity of a Partially-Embedded Pipeline on Tresca Soils

Slip-line field solutions are presented for the ultimate load of submarine pipelines on a purely cohesive soil obeying Tresca yield criterion, taking into account of pipe embedment and pipe-soil contact friction. The derived bearing capacity factors for a smooth pipeline degenerate into those for the traditional strip-line footing when the embedment approaches zero. Parametric studies demonstrate that the bearing capacity factors for pipeline foundations are significantly influenced by the pipeline embedment and the pipe-soil frictional coefficient. With the increase of pipeline embedment, the bearing capacity factor Nc decreases gradually, and finally reaches the minimum value (4.0) when the embedment equals to pipeline radius. As such, if the pipeline is directly treated as a traditional strip footing, the bearing capacity factor Nc would be over evaluated. The ultimate bearing loads increase with increasing pipeline embedment and pipe-soil frictional coefficient.

基于电光调制的激光光谱整形技术

提出了一种新型的基于电光调制的激光光谱整形方案，该整形技术可以减轻啁啾脉冲放大系统中的增益窄化效应。傅立叶变换限的宽带种子激光脉冲通过光学展宽器线性展宽后，耦合到加载有整形电脉冲的集成波导调制器中进行整形，整形电脉冲由孔径耦合带状线电脉冲发生器产生。由于线性啁啾脉冲时间-频率的直接对应关系，在时域内对宽带种子激光脉冲整形，其光谱也得到了同样形状的整形。模拟了整形光谱形状，相应的整形电脉冲波形，分析了该整形技术的光谱整形分辨率，以及整形过程中引入的相位畸变。

两根掺镱大芯双包层光纤激光器获得113W同相输出功率

利用一个自成像共焦腔和一个空间滤波器实现了两掺Yb大芯光纤激光器的位相锁定。观测到稳定的具有高对比度的干涉条纹。相干条纹的对比度为59%，而非相干时对比度为6%。中心条纹的宽度与理论计算结果吻合得很好。对同相模式而言，位相锁定激光器阵列输出达到113W，对应的斜率效率为38.5%。