非完整自主车基于圆轨迹的道路避障

本文就四轮非完整自主车提出了一种基于圆轨迹的道路避障策略。先将道路上的障碍按照障碍距离自主车的远近划分层次,使一个层次的障碍能在自主车视场中全部出现。然后给出基于圆轨迹的避障算法,即自主车沿由自主车出发位姿和子目标点确定的圆弧轨迹走行。在此之前推导四轮非完整车的运动模型为提出避障策略的基础准备。尽量减小自主车在走行过程中运动状态的改变,基于圆轨迹避障策略能够很好地满足这一要求。最后引入代价函数,给出对于此方法的评价,体现了本方法的优越性。

the trustworthiness metric model of software process quality based-on life circle

Communication University of China; Wuhan University; James Madison University; Institute of Policy and Management, Chinese Academy of Sciences; IEEE Wuhan Section

Numerical Solution for Polymer Transient Flows in a Circle Bounded Composite Formation

A new numerical model for transient flows of polymer solution in a circular bounded composite formation is presented in this paper. Typical curves of the wellbore transient pressure are yielded by FEM. The effects of non-Newtonian power-law index, mobility and boundary distance have been considered. It is found that for the mobility ratio larger than 1, which is favorable for the polymer flooding, the pressure derivative curve in log-log form rises up without any hollow. On the other hand, if the pressure derivative curve has a hollow and then is raised up, we say that the polymer flooding fails. Finally, the new model has been extended to more complicated boundary case.

Numerical Study On Transient Flow In The Deep Naturally Fractured Reservoir With High Pressure

According to the experimental results and the characteristics of the pressure-sensitive fractured formation, a transient flow model is developed for the deep naturally-fractured reservoirs with different outer boundary conditions. The finite element equations for the model are derived. After generating the unstructured grids in the solution regions, the finite element method is used to calculate the pressure type curves for the pressure-sensitive fractured reservoir with different outer boundaries, such as the infinite boundary, circle boundary and combined linear boundaries, and the characteristics of the type curves are comparatively analyzed. The effects on the pressure curves caused by pressure sensitivity module and the effective radius combined parameter are determined, and the method for calculating the pressure-sensitive reservoir parameters is introduced. By analyzing the real field case in the high temperature and pressure reservoir, the perfect results show that the transient flow model for the pressure-sensitive fractured reservoir in this paper is correct.

Game Vertebrate Densities in Hunted and Nonhunted Forest Sites in Manu National Park, Peru

Manu National Park of southern Peru is one of the most renowned protected areas in the world, yet large-bodied vertebrate surveys conducted to date have been restricted to Cocha Cashu Biological Station, a research station covering <0.06 percent of the 1.7Mha park. Manu Park is occupied by >460 settled Matsigenka Amerindians, 300-400 isolated Matsigenka, and several, little-known groups of isolated hunter-gatherers, yet the impact of these native Amazonians on game vertebrate populations within the park remains poorly understood. On the basis of 1495 km of standardized line-transect censuses, we present density and biomass estimates for 23 mammal, bird, and reptile species for seven lowland and upland forest sites in Manu Park, including Cocha Cashu. We compare these estimates between hunted and nonhunted sites within Manu Park, and with other Neotropical forest sites. Manu Park safeguards some of the most species-rich and highest biomass assemblages of arboreal and terrestrial mammals ever recorded in Neotropical forests, most likely because of its direct Andean influence and high levels of soil fertility. Relative to Barro Colorado Island, seed predators and arboreal folivores in Manu are rare, and generalist frugivores specializing on mature fruit pulp are abundant. The impact of such a qualitative shift in the vertebrate community on the dynamics of plant regeneration, and therefore, on our understanding of tropical plant ecology, must be profound. Despite a number of external threats, Manu Park continues to serve as a baseline against which other Neotropical forests can be gauged.

Some new bounds on eigenvalues of the Hadamard product and the Fan product of matrices

Let A and B be nonsingular M-matrices. A lower bound on the minimum eigenvalue q(B circle A(-1)) for the Hadamard product of A(-1) and B, and a lower bound on the minimum eigenvalue q(A star B) for the Fan product of A and B are given. In addition, an upper bound on the spectral radius rho(A circle B) of nonnegative matrices A and B is also obtained. These bounds improve several existing results in some cases and the estimating formulas are easier to calculate for they are only depending on the entries of matrices A and B. (C) 2009 Elsevier Inc. All rights reserved.

Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD

The structural characteristic of cubic GaN (C-GaN) nucleation layers on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition was in detail investigated first by X-ray diffraction (XRD) measurements, using a Huber five-circle diffractometer and an intense synchrotron X-ray source. The XRD results indicate that the C-GaN nucleation layers are highly crystallized. Phi scans and pole figures of the (1 1 1) reflections give a convincing proof that the GaN nucleation layers show exactly cubic symmetrical structure. The GaN(1 1 1) reflections at 54.74degrees in chi are a measurable component, however (002) components parallel to the substrate surface are not detected. Possible explanations are suggested. The pole figures of {1 0 (1) over bar 0} reflections from H-GaN inclusions show that the parasitic H-GaN originates from the C-GaN nucleation layers. The coherence lengths along the close-packed [1 1 1] directions estimated from the (1 1 1) peaks are nanometer order of magnitude. (C) 2002 Elsevier Science B.V. All rights reserved.

Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates

Microtwins in the 3C-SiC films grown on Si(0 0 1) by atmosphere pressure chemical vapor deposition (APCVD) were investigated in detail using X-ray four-circle diffractometry. The Phi scan shows that 3C-SiC films can grow on Si substrates epitaxially and epitaxial relationship is revealed as (0 0 1)(3C) (SiC)parallel to (0 0 1)(Si),[1 1 1](3C-SiC)parallel to [1 1 1](Si). Other diffraction peaks at about 15.8 degrees in x emerged in the pole figures of the (I 1 1) 3C-SiC. We performed the pole figure of (1 0 (1) over bar 0)h-SiC and the reciprocal space mapping from the (1 1 1) reciprocal lattice point of base SiC to the (0 0 2) point of microtwin for the first time, indicating that the diffraction peaks at 15.8 degrees in x result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be around 1%. (C) 2001 Published by Elsevier Science B.V.

Investigation of {111}A and {111} planes of c-GaN epilayers grown on GaAs(001) by MOCVD

A determination of {1 1 1}A and {1 1 1}B in cubic GaN(c-GaN) was investigated by X-ray diffraction technique in detail. The c-GaN films are grown on GaAs(0 0 1) substrates by metalorganic chemical vapor deposition(MOCVD). The difference of integrated intensities measured by omega scan for the different order diffractions from {1 1 1}A and {1 1 1}B planes in the four-circle diffractometer gives convincing evidence as to which is the {1 1 1}A and which is the {1 1 1}B planes. The lesser deviation between the ratios of /F-h k l/(2)//F-(h) over bar (k) over bar (l) over bar/(2) and the calculated values after dispersion correction for atomic scattering factor shows that the content of parasitic hexagonal GaN(h-GaN) grown on c-GaN{1 1 1}A planes is higher than that on {1 1 1}B planes. The reciprocal space mappings provide additional proof that the h-GaN inclusions in c-GaN films appear as lamellar structure. (C) 2001 Published by Elsevier Science B.V.

X-Ray diffraction determination of the fractions of hexagonal and twinned phases in cubic GaN layers grown on (001)GaAs substrate

Being an established qualitative method for investigating presence of additional phases in single crystal materials, X-ray diffraction has been used widely to characterize their structural qualities and to improve the preparation techniques. Here quantitative X-ray diffraction analysis is described which takes into account diffraction geometry and multiplicity factors. Using double-crystal X-ray four-circle diffractometer, pole figures of cubic (002), {111} and hexagonal {10 (1) over bar0} and reciprocal space mapping were measured to investigate the structural characters of mixed phases and to obtain their diffraction geometry and multiplicity factors. The fractions of cubic twins and hexagonal inclusions were calculated by the integrated intensities of rocking curves of cubic (002), cubic twin {111}, hexagonal {10 (1) over bar0} and hexagonal {10 (1) over bar1}. Without multiplicity factors, the calculated results are portions of mixed phases in only one {111} plane of cubic GaN. Diffraction geometry factor can eliminate the effects of omega and X angles on the irradiated surface areas for different scattered planes. (C) 2001 Elsevier Science B.V. All rights reserved.

Microtwins and twin inclusions in the 3C-SiC epilayers grown on Si(001) by APCVD

Microtwins in the 3C-SiC films grown on Si(001) by APCVD were analyzed in detail using an X-ray four-circle diffractometer. The empty set scan shows that 3C-SiC films can grow on Si substrates epitaxially and the epitaxial relationship is revealed as (001)(3C-SiC)//(001)(Si), [111](3C-SiC)//[111](Si). Other diffractions emerged in the pole figures of the (111) 3C-SiC. We performed the (10 (1) over bar0) h-SiC and the reciprocal space mapping of the (002) plane of twins for the first time, finding that the diffractions at chi = 15.8 degrees result from not hexagonal SiC but microtwins of 3C-SiC, and twin inclusions are estimated to be 1%.

The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition

Cubic GaN(c-GaN) films are grown on GaAs(001) substrates by metalorganic chemical vapor deposition (MOCVD). Two GaN samples were grown with different buffer layer, the deposition time of each was 1 and 3 min, respectively. 4-circle X-ray double crystal diffraction (XRDCD) was used to study the secondary crystallographic phases presented in the c-GaN films. The phase composition of the epilayers was determined by X-ray reciprocal space mapping. The intensities of the c-GaN(002) and h-GaN(10 (1) over bar 1) planes detected in the mapping were investigated by omega scans. The content of the hexagonal phase inclusions in the c-GaN films was calculated to about 1.6 and 7.9%, respectively. The thicker buffer layer is not preferable for growing high quality pure c-GaN films. (C) 2000 Elsevier Science S.A. All rights reserved.

Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates

In this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(0 0 1) substrate. The reflection high-energy electron diffraction (RHEED) pattern of the low-temperature GaN buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. Four-circle X-ray double-crystal diffraction (XRDCD) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic GaN (c-GaN) films grown on the buffer layers. The calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-GaN film. Under optimized condition, 47 meV FWHM of near band gap emission of the c-GaN film was achieved. (C) 2000 Elsevier Science B.V. All rights reserved.

Research of Face Location System Based on Human Vision Simulations

In this paper we present a robust face location system based on human vision simulations to automatically locate faces in color static images. Our method is divided into four stages. In the first stage we use a gauss low-pass filter to remove the fine information of images, which is useless in the initial stage of human vision. During the second and the third stages, our technique approximately detects the image regions, which may contain faces. During the fourth stage, the existence of faces in the selected regions is verified. Having combined the advantages of Bottom-Up Feature Based Methods and Appearance-Based Methods, our algorithm performs well in various images, including those with highly complex backgrounds.