A surface energy model and application to mechanical behavior analysis of single crystals at sub-micron scale

Size effects of mechanical behaviors of materials are referred to the variation of the mechanical behavior due to the sample sizes changing from macroscale to micro-/nanoscales. At the micro-/nanoscale, since sample has a relatively high specific surface area (SSA) (ratio of surface area to volume), the surface although it is often neglected at the macroscale, becomes prominent in governing the energy effect, although it is often neglected at the macroscale, becomes prominent in governing the mechanical behavior. In the present research, a continuum model considering the surface energy effect is developed through introducing the surface energy to total potential energy. Simultaneously, a corresponding finite element method is developed. The model is used to analyze the axial equilibrium strain problem for a Cu nanowire at the external loading-free state. As another application of the model, from dimensional analysis, the size effects of uniform compression tests on the microscale cylinder specimens for Ni and Au single crystals are analyzed and compared with experiments in literatures. (C) 2009 Elsevier B.V. All rights reserved.

Numerical Analysis of the Effects of Free-Stream Thermo-Chemical State on the Test Model Flow Field in High-Enthalpy Tunnel

The effects of the free-stream thermo-chemical state on the test model flow field in the high-enthalpy tunnel are studied numerically. The properties of the free-stream, which is in thermo-chemical non-equilibrium, are determined by calculating the nozzle flow field. A free-stream with total enthalpy equal to the real one in the tunnel while in thermo-chemical equilibrium is constructed artificially to simulate the natural atmosphere condition. The flow fields over the test models (blunt cone and Apollo command capsule model) under both the non-equilibrium and the virtual equilibrium free-stream conditions are calculated. By comparing the properties including pressure, temperature, species concentration and radiation distributions of these two types of flow fields, the effects of the non-equilibrium state of the free-stream in the high-enthalpy shock tunnel are analyzed.

The influence of fluctuation fields on the force-free field .2. The local expansion

In Paper I (Hu, 1982), we discussed the the influence of fluctuation fields on the force-free field for the case of conventional turbulence and demonstrated the general relationships. In the present paper, by using the approach of local expansion, the equation of average force-free field is obtained as (1+b)×B 0=(#x002B;a)B 0#x002B;a (1)×B 0#x002B;K. The average coefficientsa,a (1),b, andK show the influence of the fluctuation fields in small scale on the configurations of magnetic field in large scale. As the average magnetic field is no longer parallel to the average electric current, the average configurations of force-free fields are more general and complex than the usual ones. From the view point of physics, the energy and momentum of the turbulent structures should have influence on the equilibrium of the average fields. Several examples are discussed, and they show the basic features of the fluctuation fields and the influence of fluctuation fields on the average configurations of magnetic fields. The astrophysical environments are often in the turbulent state, the results of the present paper may be applied to the turbulent plasma where the magnetic field is strong.

Avoidant Learning Ability in Free Flying Housefly (Aldrichina grahami)by Electric Shock

下载PDF阅读器研究证实:蜜蜂和果蝇具有良好的学习记忆能力.利用自主改良的研究装置对另一种具有强大生存本能的双翅目昆虫--巨尾阿丽蝇(Aldrichina grahami)在自由状态下电击同避学习能力进行研究.结果表明,巨尾阿丽蝇具有良好的学习记忆能力,因为当刺激电压范围为5V到45V时,观察到巨尾阿丽蝇有显著的回避电刺激行为,而当电压达到60V时会受到明显伤害.由此推测,巨尾阿丽蝇适合作为神经系统研究的动物模型.该实验所采用的实验范例较以往有所改进,适合作为自由状态下研究昆虫的工具.

Chirp-free optical modulation using a silicon push-pull coupling microring

We propose a silicon ring-based optical modulation method to perform chirp-free optical modulations. In this scheme, we locate the light to be modulated at the resonance of the ring and tune the coupling coefficient between the ring and the straight waveguide by using a push-pull coupling structure. The chirp-free phase modulation can be achieved by varying the coupling coefficient in a large range, which can modify the coupling condition of the ring such that the input light experiences an abrupt phase shift of pi at the output. If the coupling coefficient is adjusted in a small range such that the coupling condition of the ring is kept unchanged, only the intensity of the light will be modulated. This leads to chirp-free intensity modulation. Our simulations performed at 10 Gbits/s confirm the feasibility of the proposal. (C) 2009 Optical Society of America

Metal catalysis-free, direction-controlled planar growth of single-crystalline alpha-Si3N4 nanowires on Si(100) substrate

Single-crystalline alpha-Si3N4 nanowires are controlled to grow perpendicular to the wet-etched trenches in the SiO0.94 film on the plane of the Si substrate without metal catalysis. A detailed characterization is carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The photoluminescence at 600 nm from alpha-Si3N4 nanowires is attributed to the recombination at the defect state formed by the Si dangling bond N3 equivalent to Si-center dot. The growth mechanism is considered to be related to the catalysis and nitridation of SiO nanoclusters preferably re-deposited around the inner corner of the trenches, as well as faster Si diffusion along the slanting side walls of the trenches. This simple direction-controlled growth method is compatible with the CMOS process, and could facilitate the fabrication of alpha-Si3N4 nanoelectronic or nanophotonic devices on the Si platform.

Electron ground state energy level determination of ZnSe self-organized quantum dots embedded in ZnS

Optical and electrical characterization of the ZnS self-organized quantum dots (QDs) embedded in ZnS by molecular beam epitaxy have been investigated using photoluminescence (PL), capacitance-voltage (C-V), and deep level transient Fourier spectroscopy (DLTFS) techniques. The temperature dependence of the free exciton emission was employed to clarify the mechanism of the PL thermal quenching processes in the ZnSe QDs. The PL experimental data are well explained by a two-step quenching process. The C-V and DLTFS techniques were used to obtain the quantitative information on the electron thermal emission from the ZnSe QDs. The correlation between the measured electron emission from the ZnSe QDs in the DLTFS and the observed electron accumulation in the C-V measurements was clearly demonstrated. The emission energy for the ground state of the ZnSe QDs was determined to be at about 120 meV below the conduction band edge of the ZnS barrier, which is in good agreement with the thermal activation energy, 130 meV, obtained by fitting the thermal quenching process of the free exciton PL peak. (C) 2003 American Institute of Physics.

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

A Schottky-based metal-semiconductor-metal photodetector is fabricated on 1 mu m-thick, crack-free GaN on Si (I 11) substrate using an optimized AlxGal-xN/AlN complex buffer layer. It exhibits a high responsivity of 4600A/W at 366nm which may be due to both a crack-free sample and high internal gain. The relationship between responsivity and bias voltage is also investigated. The experiment results indicate that the responsivity increases with the bias voltage and shows a tendency to saturate. (c) 2007 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim.

A broadband external cavity tunable InAs/GaAs quantum dot laser by utilizing only the ground state emission

A broadband external cavity tunable laser is realized by using a broad-emitting spectral InAs/GaAs quantum dot (QD) gain device. A tuning range of 69 nm with a central wavelength of 1056 nm, is achieved at a bias of 1.25 kA/cm(2) only by utilizing the light emission from the ground state of QDs. This large tunable range only covers the QD ground-state emission and is related to the inhomogeneous size distribution of QDs. No excited state contributes to the tuning bandwidth. The application of the QD gain device to the external cavity tunable laser shows its immense potential in broadening the tuning bandwidth. By the external cavity feedback, the threshold current density can be reduced remarkably compared with the free-running QD gain device.

MOCVD growth of high quality crack-free GaN on Si(III) substrates

High quality crack free GaN epilayers were grown on Si(111) substrates. Low temperature AlN interlayer grown under low V/III ratio was used to effectively eliminate the formation of micro-cracks. It is found that tensile stress in the GaN epilayer decreases as the N/Al ratio decreases used for AlN interlayer growth. The high optical and structural qualities of the GaN/Si samples were characterized by RBS, PL and XRD measurements. The RT-PL FWHM of the band edge emission is only 39.5meV The XRD FWHM of the GaN/Si sample is 8.2arcmin, which is among the best values ever reported.

Isospin dependence of the nuclear equation of state near the critical point

We discuss experimental evidence for a nuclear phase transition driven by the different concentrations of neutrons to protons. Different ratios of the neutron to proton concentrations lead to different critical points for the phase transition. This is analogous to the phase transitions occurring in He-4-He-3 liquid mixtures. We present experimental results that reveal the N/A (or Z/A) dependence of the phase transition and discuss possible implications of these observations in terms of the Landau free energy description of critical phenomena.

EFFICIENCY DYNAMICS ON SCALE-FREE NETWORKS WITH COMMUNITIES

The simple efficiency model is developed on scale-free networks with communities to study the effect of the communities in complex networks on efficiency dynamics. For some parameters, we found that the state of system will transit from a stagnant phase to a growing phase as the strength of community decreases.

Dye-sensitized solar cells with solvent-free ionic liquid electrolytes

We systematically studied the temperature-dependent physicochemical properties, such as density, conductivity, and fluidity, of 1,3-dialkylimidazolium iodides. In combination with the amphiphilic Z907Na sensitizer, we have found that it is important to use low-viscosity iodide melts with small cations to achieve high-efficiency dye-sensitized solar cells. By employing high-fluidity eutectic-based melts the device efficiencies considerably increased compared to those for cells with the corresponding state of the art ionic liquid electrolytes.

High-Performance Liquid and Solid Dye-Sensitized Solar Cells Based on a Novel Metal-Free Organic Sensitizer

A new metal-free organic sensitizer (see figure) for high-performance and applicable dye-sensitized solar cells is presented. In combination with a solvent-free ionic liquid electrolyte, a similar to 7% cell made with this sensitizer shows all excellent stability measured under thermal and light-soaking dual stress. For the first time a 4.8% efficiency is reached for all-solid-state dye-sensitized solar cells based oil all organic dye.

[Ru(bpy)2dppz]2+ electrochemiluminescence switch and its applications for DNA interaction study and label-free ATP aptasensor

[Ru(bpy)2dppz]2+ electrochemiluminescence (ECL) was studied, and it was used to investigate DNA interaction and develop a label-free ATP aptasensor for the first time. ECL of [Ru(bpy)2dppz]2+ is negligible in aqueous solution, and increases approximately 1000 times when [Ru(bpy)2dppz]2+ intercalates into the nucleic acid structure. The ECL switch behavior of [Ru(bpy)2dppz]2+ is ascribed to the intercalation that shields the phenazine nitrogens from the solvent and results in a luminescent excited state. The ECL switch by DNA was applied to investigate the interaction of [Ru(bpy)2dppz]2+ with herring sperm DNA. The calculated equilibrium constant (K) is 1.35 x 10(6) M(-1), and the calculated binding-site size (s) is 0.88 base pair, which is consistent with the reported values.