INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AU AND HYDROGENATED AMORPHOUS SI STUDIED BY XPS AND AES

Interfacial formation processes and reactions between Au and hydrogenated amorphous Si have been studied by photoemission spectroscopy and Auger electron spectroscopy. A three-dimensional growth of Au metal cluster occurs at initial formation of the Au/a-Si:H interface. When Au deposition exceeds a critical time, Au and Si begin interdiffusing and react to create an Au-Si alloy region. Annealing enhances interdiffusion and a Si-rich region exists on the topmost surface of Au films on a-Si:H.

PHOTOEMISSION-STUDY OF THE INTERFACIAL FORMATION PROCESS AND REACTIONS BETWEEN AL AND HYDROGENATED AMORPHOUS SI

Using photoemission spectroscopy and Auger electron spectroscopy, the interfacial formation process and the reactions between Al and hydrogenated amorphous Si are probed, and annealing behaviors of the Al/a-Si:H system are investigated as well. It is found that a three-dimensional growth of Al metal clusters which includes reacted Al and non-reacted metal Al occurs at the initial Al deposition time, reacted Al and Si alloyed layers exist in the Al/a-Si:H interface, and non-reacted Al makes layer-by-layer growth forming a metal Al layer on the sample surface. The interfacial reactions and element interdiffusion of Al/a-Si:H are promoted under the vacuum annealing.

Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism

High quality silicon nanowires (SiNWs) were grown directly from n-(111) silicon single crystal substrate by using Au film as a metallic catalyst. The diameter and length of the formed nanowires are 30-60 nm and from several micrometers to sereral tens of micrometers, respectively. The effects of Au film thickness, annealing temperature, growth time and N-2 gas flow rate on the formation of the nanowires were experimentally investigated. The results confirmed that the silicon nanowires with controlled diameter, length, shape and orientation can be obtained via reasonably choosing and optimizing various technical conditions. The formation process of the silicon nanowires is analyzed qualitatively based on solid-liquid-solid growth mechanism.

Influence of A-type Zeolite on Methane Hydrate Formation

The porous medium has an important effect on hydrate formation. In this paper, the formation process and the gas storage capacity of the methane hydrate were investigated with A-type zeolite and Sodium Dodecyl Sulfate (SDS) existing in the system. The results show that A-type zeolite can influence methane hydrate formation. At the temperature of 273.5 K and pressure of 8.3 MPa, the distilled water with A-type zeolite can form methane hydrate with gaseous methane in 12 hours. The formation process of the system with A-type zeolite was quite steady and the amount of A-type zeolite can influence the gas storage capacity significantly. The adding of A-type zeolite with 0.067 g.(g water)(-1) into 2 x 10(-3) g.g(-1) SDS-water solution can increase the gas storage capacity, and the maximum increase rate was 31%. Simultaneously the promotion effect on hydrate formation of 3A-type zeolite is much more obvious than that of 5A-type zeolite when the water adding amounts are 0.033 g.g(-1) and 0.067 g.g(-1) at the experimental conditions.

Influence of 3A molecular sieve to tetrahydrofuran(THF) hydrate formation

Visual observation of the THF hydrate formation process in the presence of a 3A molecular sieve has been made at normal atmosphere and below a temperature of zero by microscopy. The results indicate that a 3A molecular sieve can induce the nucleation of the THF hydrate and promote the THF hydrate growth. With the existence of a 3A molecular sieve, the growth rate of THF hydrate is between 0.01 and 0.05 mu m/s. In comparison with the system without any 3A molecular sieve, the growth rate increases about 4 nm/s. After the THF hydrate grows into megacryst, the crystals will recombine and partially change under the same condition.

Formation of conducting layers on excimer-laser-irradiated polyimide film surfaces

Conducting layers on KrF excimer-laser-irradiated polyimide film surfaces were investigated by XPS, SEM and Fourier transform infrared (FTIR)-Raman spectroscopy, Analysis of polyimide residue after laser irradiation provided valuable insight into the nature of the formation of conducting layers. The subtle different between KrF laser irradiation and the pyrolysis of polyimide was found by comparison of the formation process of conducting layers. A physical picture was presented to describe better the formation of conducting layers. Under KrF laser irradiation, polyimide films underwent thermal decomposition assisted by photoinduced direct bond breaking. Polycrystalline graphite was subsequently formed as the product of the secondary addition reaction of carbon-enriched clusters, Such reaction was supported by the remaining energy on the irradiated polyimide film surface. This result shows that the thermal process played an important role that was not just restricted to the formation of conducting layers, Copyright (C) 2000 John Wiley & Sons, Ltd.

Several new phenomena in the formation of ring-banded spherulites of poly(epsilon-caprolactone) and poly(styrene-random-acrylonitrile) blends

Ring-banded spherulites in crystallization of poly(epsilon-caprolactone) and poly (styrene-random-acrylonitrile) blends were observed with polarizing optical microscopy and digital image analysis technique was applied directly to the image obtained by polarizing microscope, Several new interesting phenomena were found. One is that the ring-banded structure is still clearly seen after the analyzer was removed and this astonished phenomenon couldn't result from the general concept about formation mechanism of ring-banded spherulite - lamellae twisting, Another one is that there is a slight, dark line in the bright band when cross polars were added, which may be related to the formation process and mechanism of ring-banded spherulites in the blends of poly (epsilon-caprolactone) and poly (styrene-random-acrylonitrile).

The Structure and Evolution of a Two-Dimensional H2/O2/Ar Cellular Detonation

This paper reports on two-dimensional numerical simulation of cellular detonation wave in a / / mixture with low initial pressure using a detailed chemical reaction model and high order WENO scheme. Before the final equilibrium structure is produced, a fairly regular but still non-equilibrium mode is observed during the early stage of structure formation process. The numerically tracked detonation cells show that the cell size always adapts to the channel height such that the cell ratio is fairly independent of the grid sizes and initial and boundary conditions. During the structural evolution in a detonation cell, even as the simulated detonation wave characteristics suggest the presence of an ordinary detonation, the evolving instantaneous detonation state indicates a mainly underdriven state. As a considerable region of the gas mixture in a cell is observed to be ignited by the incident wave and transverse wave, it is further suggested that these two said waves play an essential role in the detonation propagation.

Preliminary Investigations on Low-Pressure Laminar Plasma Spray Processing

The usual plasma spraying methods often involve entrainment of the surrounding air into the turbulent plasma core and result in coated materials having relatively high porosity and low adhesive strength. Therefore, exploration of new plasma spraying methods for fabricating high quality coatings to meet the requirement of special applications will be quite important. In this study, an alternative plasma spraying method, i.e. the low-pressure laminar plasma spraying process, is investigated and used in an attempt for spraying thermal barrier coatings (TBCs). Investigations on the characteristics of the laminar plasma jets, feeding methods for the ceramic powder and the formation process of the individual quenched splats have been carried out. The properties of the TBCs sprayed by laminar plasma jet process, such as the adhesive strength at the interface of the ceramic coating/bond coat, the surface roughness and microstructure, are examined by tensile tests and scanning electron microscope (SEM) observations.

Laser pulse induced bumps in chalcogenide phase change films

Formation of bumps in chalcogenide phase change thin films during the laser writing process is theoretically and experimentally investigated. The process involves basically fast heating and quenching stages. Circular bumps are formed after cooling, and the shape and size of the bumps depend on various parameters such as temperatures, laser power, beam size, laser pulse duration, etc. In extreme cases, holes are formed at the apex of the bumps. To understand the bumps and their formation is of great interest for data storage. In the present work, a theoretical model is established for the formation process, and the geometric characters of the formed bumps can be analytically and quantitatively evaluated from various parameters involved in the formation. Simulations based on the analytic solution are carried out taking Ag8In14Sb55Te23 as an example. The results are verified with experimental observations of the bumps. (C) 2008 American Institute of Physics.

Expression pattern and developmental behaviour of cellular nucleic acid-binding protein (CNBP) during folliculogenesis and oogenesis in fish

In vertebrates, folliculogeneis establishes an intricate system for somatic cell-oocyte interaction, and ultimately leads to the acquisition of their respective competences. Although the formation process and corresponding interactions are strikingly similar in diverse organisms, knowledge of genes and signaling pathways involved in follicle formation is very incomplete and the underlying molecular mechanisms remain enigmatic. CNBP has been identified for more than ten years, and the highest level of CNBP transcripts has been observed in adult zebrafish ovary, but little is known about its functional significance during folliculogeneis and oogenesis. In this study, we clone CNBP cDNA from gibel carp (Carassius auratus gibelio), and demonstrate its predominant expression in gibel carp ovary and testis not only by RTPCR but also by Western blot. Its full-length cDNA is 1402 bp, and has an ORF of 489 nt for encoding a peptide of 163 aa. And its complete amino acid sequence shared 68.5%-96.8% identity with CNBPs from other vertebrates. Based on the expression characterization, we further analyze its expression pattern and developmental behaviour during folliculogeneis and oogenesis. Following these studies, we reveal an unexpected discovery that the CagCNBP is associated with follicular cells and oocytes, and significant distribution changes have occurred in degenerating and regenerating follicles. More interestingly, the CagCNBP is more highly expressed in some clusters of interconnected cells within ovarian cysts, no matter whether the cell clusters are formed from the original primordial germ cells or from the newly formed cells from follicular cells that invaded into the atretic oocytes. It is the first time to reveal CNBP relevance to folliculogeneis and oogenesis. Moreover, a similar stage-specific and cell-specific expression pattern has also been observed in the gibel carp testis. Therefore, further studies on CNBP expression pattern and developmental behaviour will be of significance for understanding functional roles of CNBP during gametogenests. (c) 2005 Elsevier B.V. All rights reserved.

Anomalous coarsening of self-assembled InAs quantum dots on vicinal GaAs (100) substrates

The formation process of InAs quantum dots (QDs) on vicinal GaAs (1 0 0) substrates is studied by atomic force microscopy (AFM). It is found that after 1.2 MLs of InAs deposition, while the QDs with diameters less than the width of the multi-atomic steps are shrinking, the larger QDs are growing. Photoluminescence measurements of the uncapped QDs correspond well to the AFM structure observations of the QDs. We propose that the QDs undergo an anomalous coarsening process with modified growth kinetics resulting from the restrictions of the finite terrace sizes. A comparison between the QDs on the vicinal GaAs (1 0 0) substrates and the QDs on the exact GaAs (1 0 0) further verifies the effect of the multi-atomic steps on the formation of QDs.

超声波对HCFC-141b水合物形成过程的影响研究

针对水合物形成过程中存在成核诱导期长、过冷度大，形成速度慢的问题，本文以HCFC-141b（1，1-dichloro-1-flooroethane）作为研究工质，将超声波引入水合物形成过程中，研究超声波对水合物形成的影响。建立了包括超声波水合反应系统、数据采集和图像采集系统的可视化低温实验系统。利用这套实验系统，分别实验研究了频率为20kHz和15kHz，功率为0-1000w的超声波对HCFC-141b水合物的形成影响。实验结果表明，超声波对水合物的形成有明显的影响。水合物形成过程主要分为三阶段：冷却期、

海底沉积层中水合物成藏过程模拟

水合物成藏是一种动态演变过程，从生成和分解速度相对大小角度提出了天然气水合物的动态成藏理论；分析指出天然气水合物储层状态主要存在三种类型：成长型（包括渗透型与扩散型）、成熟型和消退型，必须结合经济型指标对这三种类型水合物藏进行开采可行性研究。 通过在自制的透明鼓泡反应釜内模拟气体迁移与水合物形成实验，解释了气体迁移对体系内传热与传质、溶解性质、过压等的影响因，进一步指出需要研究新的水合物相图。 从传热角度建立了水合物生长模型，计算并比较了南海北部陆坡琼东南盆地里甲烷水合物在渗漏系统和扩散系统下的生长速度，指出前者比后者快约20-40倍。 建立了水-气（游离气）-水合物-盐反应的多相流模型，演绎了在四个不同时刻随着水合物的形成，溶解度、渗透率、毛细压力、饱和度及盐度等的联动演变关系，并分析和比较了在沉积层水合物稳定区域内不同游离气饱和度和甲烷渗漏通量情况下水合物的形成过程和三种成藏类别。 反演了神狐海域水合物的形成，指出该区很可能是属于发育阶段的成长型渗漏系统水合物储藏，按照甲烷渗漏通量为0.5kg/m2·a计算，该地区已演化了约4800a，还需要约2700ka孔隙中水合物可到最大体积饱和度，达约75%，并在此后游离气将溢出沉积层进入海水中；计算得最终的甲烷水合物储量约为1.47×109m3，即该区最终将储存着约2200亿立方米甲烷气，是现在预测的约13倍！

纳米流体中HFC134a水合物的生成过程

提出制冷剂气体水合物在纳米流体中快速生成的设想，通过HFC134a气体水合物在纳米铜流体（由0．04％的十二烷基苯磺酸钠（SDBS）水溶液和名义直径为25nm的纳米铜粒子组成）中的生成实验验证了此设想．实验结果表明，与去离子水中HFC134a气体水合物的生成过程相比，纳米铜流体中SDBS是造成HFC134a气体水合物诱导时问明显缩短的主要原因，而纳米铜粒子对诱导时间的影响不大；纳米铜流体中SDBS的乳化作用和纳米铜粒子大比表面积大大促进了HFC134a在水中的溶解；纳米铜粒子的加入明显加强了HFC134a气体水合物生成过程中的传热传质，随着纳米铜粒子数的增加，HFC134a气体水合物生成过程明显缩短．