145 resultados para FIELD-INDUCED OXIDATION

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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We study the behaviour of atoms in a field with both static magnetic field and radio frequency (rf) magnetic field. We calculate the adiabatic potential of atoms numerically beyond the usually rotating wave approximation, and it is pointed that there is a great difference between using these two methods. We find the preconditions when RWA is valid. In the extreme of static field almost parallel to rf field, we reach an analytic formula. Finally, we apply this method to Rb-87 and propose a guide based on an rf field on atom chip.

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We theoretically study the conducting electronic contribution to the cohesive force in a metallic nanowire irradiated under a transversely polarized external electromagnetic field at low temperatures and in the ballistic regime. In the framework of the free-electron model, we have obtained a time-dependent two-level electronic wavefunction by means of a unitary transformation. Using a thermodynamic statistical approach with this wavefunction, we have calculated the cohesive force in the nanowire. We show that the cohesive force can be divided into two components, one of which is independent of the electromagnetic field (static component), which is consistent with the existing results in the literature. The magnitude of the other component is proportional to the electromagnetic field strength. This extra component of the cohesive force is originally from the coherent coupling between the two lateral energy levels of the wire and the electromagnetic field.

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We study theoretically the low-temperature electronic transport property of a straight quantum wire under the irradiation of a finite-range transversely polarized external terahertz (THz) electromagnetic (EM) field. Using the free-electron model and the scattering matrix approach, we show an unusual behaviour of the electronic transmission of this system. A sharp step-structure appears in the electronic transmission probability as the EM field strength increases to a threshold value when a coherent EM field is applied. We demonstrate that this effect physically comes from the inelastic scattering of electrons with lateral photons through intersubband transitions.

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When injected electrons in a quantum well first experience an intersubband relaxation process before their escaping by tunneling through a double-barrier structure behind, the magnetic suppression of intersubband LO or LA phonon scattering can give rise to a noticeable nonthermal occupation in higher-lying subbands. That is clearly verified by the relative intensity ratio of the interband photoluminescence spectra for E-2-HH1 and E-1-HH1 transitions. The observed phenomenon may provide an effective method for controlling intersubband scattering rate, a central issue in so-called quantum cascade lasers, and facilitating the population inversion between subbands in quantum wells.

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We have investigated the Wannier-Stark effect in GaAs/GaAl1-xAs superlattices under electric fields by photocurrent spectroscopy measurements in the range of temperatures 10-300 K. The linewidth of the Oh Stark-ladder exciton was found to increase significantly along with an increase in peak intensity when the electric field increases. We present a mechanism based on an enhanced interface roughness scattering of electronic states due to Wannier-Stark localization in order to explain this increased broadening with electric field. This electric-field-related scattering mechanism will weaken the negative differential conductance effects in superlattices predicted by Esaki and Tsu.

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Based upon a hybrid ferromagnet/semiconductor structure consisting of two-dimensional electron gas and a pair of surface ferromagnetic stripes on top, we have theoretically investigated the effect of in-plane stray field omitted frequently in previous studies on the spin-dependent ballistic transport properties in hybrid structure. It is demonstrated here that, in combination with an external-controllable electrostatic modulation, the concerned structure shows a similar function as a lateral spin-polarized resonant tunneling device, where the strong spin-filtering effect occurs and nearly single-mode polarization is anticipated for the proper modulation. More importantly, the spin polarity of transmission electron can be easily transferred from one extreme to the other by switching the magnetization of stripes, showing the promising application as an efficient spin aligner in the developing semiconductor spintronics.

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Electric-field-induced molecular alignments of side-chain liquid-crystalline polyacetylenes [-{HC=C[(CH2)(m)OCO-biph-OC7H15]}-, where biph is 4,4'-biphenylyl and m is 3 (PA3EO7) or 9 (PA9EO7)] were studied with X-ray diffraction and polarized optical microscopy. An orientation as high as 0.84 was obtained for PA9EO7. Furthermore, the molecular orientation of]PA9EO7 was achieved within a temperature range between the isotropic-to-smectic A transition temperature and 115 degreesC, and this suggested that the orientational packing was affected by the thermal fluctuation of the isotropic liquid and the mobility of the mesogenic moieties. The maximum achievable orientation for PA9EO7 was much greater than that for PA3EO7. This was the first time that the electric-field-induced molecular orientation of a side-chain liquid-crystalline polymer with a stiff backbone was studied.

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Atomic force microscope (AFM)-based scanned probe oxidation (SPO) nanolithography has been carried out on an octadecyl-terminated Si(111) surface to create dot-array patterns under ambient conditions in contact mode. The kinetics investigations indicate that this SPO process involves three stages. Within the steadily growing stage, the height of oxide dots increases logarithmically with pulse duration and linearly with pulse voltage. The lateral size of oxide dots tends to vary in a similar way. Our experiments show that a direct-log kinetic model is more applicable than a power-of-time law model for the SPO process on an alkylated silicon in demonstrating the dependence of oxide thickness on voltage exposure time within a relatively wide range. In contrast with the SPO on the octodecysilated SiO2/silicon surface, this process can be realized by a lower voltage with a shorter exposure time, which will be of great benefit to the fabrication of integrated nanometer-sized electronic devices on silicon-based substrates. This study demonstrates that the alkylated silicon is a new promising substrate material for silicon-based nanolithography.

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Scanned probe oxidation (SPO) nanolithography has been performed with an atomic force microscope (AFM) on an octadecyl-terminated silicon (111) surface to create protuberant oxide line patterns under ambient conditions in contact mode. The kinetic investigations of this SPO process indicate that the oxide line height increases linearly with applied voltage and decreases logarithmically with writing, speed. The oxide line width also tends to vary with the same law. The ambient humidity and the AFM tip state can remarkably influence this process, too. As compared with traditional octadecylsilated SiO2/Si substrate, such a substrate can guarantee the SPO with an obviously lowered voltage and a greatly increased writing speed. This study demonstrates that such alkylated silicon is a promising silicon-based substrate material for SPO nanolithography.

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In order to investigate the effect of external field on the crystallization behavior of poly(3-dodecylthiopliene) (P3DDT), the samples were recrystallized with different electrostatic field intensity, different pressure and different solidification direction in temperature gradient field. Measurements of differential scanning calorimetry and X-ray diffraction were operated to characterize these samples for analysis. The results suggest that after recrystallization, whether the external field is added or not, a more compact packing of molecular chains in P3DDT could be obtained without the change of the crystal structure model. Moreover, the addition of electrostatic field has greater effects on the crystallization of rigid main chains than on that of flexible side chains, Merely great pressure field can effect the rearrangements of molecular chains greatly. As for the temperature gradient field induced crystallization, different oriented solidification direction will lead to different effects on the compact degree and perfect degree of molecular chains packing,

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The irreversible conformational transition of bovine serum albumin (BSA) from alpha-helix to beta-sheet, induced by electric field near the electrode surface, was monitored by circular dichroism (CD) with a long optical path thin layer cell (LOPTLC).

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A unique reverse micelle method has been developed to prepare gold-coated iron (Fe@Au) nanoparticles. XRD, UV/vis, TEM, and magnetic measurements are utilized to characterize the nanocomposites. XRD only gives FCC patterns of gold for the obtained nanoparticles. The absorption band of the Fe@Au colloid shifts to a longer wavelength and broadens relative to that of the pure gold colloid. TEM results show that the average size of Fe@Au nanoparticles is about 10 nm, These nanoparticles are self-assembled into chains on micron scale under a 0.5 T magnetic field. Magnetic measurements show that the particles are superparamagnetic with a blocking temperature (T-B) of 42 K, At 300 K (above T-B), no coercivity (Hc) and remanence (M-r) is observed in the magnetization curve, while at 2K (below T-B) He and M, are observed to be 728 Oe and 4.12 emu/g, respectively, (C) 2001 Academic Press.

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A liquid crystalline (LC) copolyether has been synthesized from 1-(4-hydroxy-4'-biphenyl)-2-(4-hydroxyphenyl)propane with 1,7-dibromoheptane and 1,11-dibromoundecane with a 50/50 (both in %) equal composition of the 7- and 11-methylene monomers [coTPP-7/11(5/5)]. A mono-domain with a homeotropic alignment can be induced by a thin film surface in the LC phase. When an electrostatic field is applied to the surface-induced mono-domains parallel to the thin film surface normal, the molecular alignment undergoes a change from the homeotropic to uniaxial homogeneous arrangement. However, when the field is applied to a direction perpendicular to the thin film surface normal. the molecular alignment is about 10 degrees -tilt with respect to the homeotropic alignment toward the a*-axis. This is because the permanent dipole moment of the copolyether is not right vertical to the molecular direction. The calculation of molecular dipoles indicates that the permanent dipole moment of this copolyether is about 70 degrees away from the molecular axis, which leads to a negative dielectric anisotropy. It is speculated that the 10 degrees- rather than 20 degrees -tilt is due to a balance between the alignment induced by the electrostatic field and the surface. In the electrostatic field, molecules are subjected to a torque tau, which is determined by the permanent dipole moment P and the electrostatic field E: tau = P x E. The molecular realignment in both parallel and perpendicular directions to the thin film surface normal is determined by satisfying the condition of tau = P x E = 0. (C) 2001 Elsevier Science Ltd. All rights reserved.

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The chemiluminescence (CL) emission from three kinds of polyethylene, HDPE, LLDPE and LDPE, which had been exposed to 80 kGy dose from Co-60 in both air and nitrogen, has been examined. CL measurement was done under both nitrogen and oxygen atmosphere. The results show that the CL emission from irradiated samples does not result from irradiation itself, but from the oxidation reactions occurring during and after irradiation. Addition of 1 phr of an antioxidant, Irganox 1010, can effectively inhibit the radiation induced oxidation in LLDPE and LDPE. In the case of HDPE, however, it was found that pure HDPE has the best resistance to radiation-induced oxidation of the polymers examined in this work. However, incorporation of Irganox 1010 was found to have not only a stabilizing effect against radiation induced oxidation, but also to promote the oxidation in some cases.

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We investigate the influence of a transverse magnetic field on the current-voltage characteristics of a doped GaAs/AlAs superlattice at 1.6 K. The current transport regimes-stable electric field domain formation and current selfoscillation-are observed with increasing transverse magnetic field up to 13 T. Magnetic-field-induced redistribution of electron momentum and energy is identified as the mechanism triggering the switching over of one process to another lending to a change in the dependence of the effective electron drift velocity on electric field. Simulation yields excellent agreement with observed results.