Nucleation of diamond by pure carbon ion bombardment - a transmission electron microscopy study

A cross-sectional high-resolution transmission electron microscopy (HRTEM) study of a film deposited by a 1 keV mass-selected carbon ion beam onto silicon held at 800 degrees C is presented. Initially, a graphitic film with its basal planes perpendicular to the substrate is evolving. The precipitation of nanodiamond crystallites in upper layers is confirmed by HRTEM, selected area electron diffraction, and electron energy loss spectroscopy. The nucleation of diamond on graphitic edges as predicted by Lambrecht [W. R. L. Lambrecht, C. H. Lee, B. Segall, J. C. Angus, Z. Li, and M. Sunkara, Nature, 364 607 (1993)] is experimentally confirmed. The results are discussed in terms of our recent subplantation-based diamond nucleation model. (c) 2005 American Institute of Physics.

Violet/blue emission from hydrogenated amorphous carbon films deposited from energetic CH3+ ions and ion bombardment

Considering the complexity of the general plasma techniques, pure single CH3+ ion beams were selected for the deposition of hydrogenated amorphous (a) carbon films with various ion energies and temperatures. Photoluminescence (PL) measurements have been performed on the films and violet/blue emission has been observed. The violet/blue emission is attributed to the small size distribution of sp(2) clusters and is related to the intrinsic properties of CH3 terminals, which lead to a very high barrier for the photoexcited electrons. Ion bombardment plays an important role in the PL behavior. This would provide further insight into the growth dynamics of a-C:H films. (C) 2002 American Institute of Physics.

Ion bombardment as the initial stage of diamond film growth

It is believed that during the initial stage of diamond film growth by chemical-vapor deposition (CVD), ion bombardment is the main mechanism in the bias-enhanced-nucleation (BEN) process. To verify such a statement, experiments by using mass-separated ion-beam deposition were carried out, in which a pure carbon ion beam, with precisely defined low energy, was selected for investigating the ion-bombardment effect on a Si substrate. The results are similar to those of the BEN process, which supports the ion-bombardment-enhanced-nucleation mechanism. The formation of sp(3) bonding is based on the presumption that the time of stress generation is much shorter than the duration of the relaxation process. The ion-bombarded Si is expected to enhance the CVD diamond nucleation density because the film contains amorphous carbon embedded with nanocrystalline diamond and defective graphite. (C) 2001 American Institute of Physics.

Carbon film deposited by mass-selected low energy ion beam technique and ion bombardment effect

By mass-selected low energy ion beam deposition, amorphous carbon film was obtained. X-ray diffraction, Raman and Auger electron spectroscopy depth line shape measurements showed that such carbon films contained diamond particles. The main growth mechanism is subsurface implantation. Furthermore, it was indicated in a different way that ion bombardment played a decisive role in bias enhanced nucleation of chemical vapor deposition diamond.

Potential sputtering by Highly Charged Ion bombardment on Au surface

The sputtered particle yields produced by Pbq+ (q=4-36) with constant kinetic energy bombardment on An surface were measured. The sputtering Could be separated to two parts: no potential sputtering is observed when q<24 (E-pot = 9.6 keV) and the sputtering yield increases with E-pot(1.2) for the higher charge states of q >= 24. The potential sputtering is mainly contributed by the relaxation of electronic excitations on target surface produced by the potential energy transfer from projectile to target atoms.

A high performance Time-of-Flight detector applied to isochronous mass measurement at CSRe

A high performance Time-of-Flight detector has been designed and constructed for isochronous mass spectrometry at the experimental Cooler Storage Ring (CSRe) The detector has been successfully used in an experiment to measure the masses of the N approximate to Z approximate to 33 nuclides near the proton drip-line Of particular interest is the mass of As-65 A maximum detection efficiency of 70% and a time resolution of 118 +/- 8 Ps (FWHM) have been achieved in the experiment The dependence of detection efficiency and signal average pulse height (APH) on atomic number Z has been studied The potential of APH for Z identification has been discussed (C) 2010 Elsevier B V All rights reserved

Carbonization process of Si(100) by ion-beam bombardment

The evolution of carbonization process on Si as a function of ion dose has been carried out by mass-selected ion-beam deposition technique. 3C-SiC layer has been obtained at low ion dose, which has been observed by reflection high energy electron diffraction and X-ray photoelectron spectroscopy (XPS). The chemical states of Si and carbon have also been examined as a function of ion dose by XPS. Carbon enrichment was found regardless of the used ion dose here, which may be due to the high deposition rate. The formation mechanism of SiC has also been discussed based on the subplantation process. The work will also provide further understanding of the ion-bombardment effect. (C) 2001 Published by Elsevier Science B.V.

Quantitative analysis of pethidine using liquid secondary ion and tandem mass spectrometry

A method for the quantatitive determination of pethidine in human urine by liquid secondary ion and tandem mass spectrometry is presented. Quantification was carried out by using ketamine as internal standard. It was found that the collision-induced dissociation (CID) spectrum of the [M + H](+) ion of pethidine exhibited a prominent daughter ion at mit 220 and ketamine also yielded the same daughter ion at nit 220, For ((quadrupole)) quantitative analysis, the first quadrupole mass filter was set to transmit mit 220 and a narrow-range magnet scan yielded a spectrum of parents, including mit 238 and 248, corresponding to ketamine and pethidine, respectively. Copyright (C) 1999 John Wiley & Sons, Ltd.

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 degrees C) and high temperature (HT, 900 degrees C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In-Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N-As at the QW interfaces. As defects are removed by annealing, the diffusion of In-Ga at interfaces would be predominant. (C) 2000 American Institute of Physics. [S0003- 6951(00)01535-7].

DIRECT ION-BEAM DEPOSITION OF CARBON-FILMS ON SILICON IN THE ION ENERGY-RANGE OF 15-500 EV

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15-500 eV and temperature range of 25-800-degrees-C has been studied. The work was carried out using mass-separated C+ and CH3+ ions under ultrahigh vacuum. The films were characterized with x-ray photoelectron spectroscopy, Raman spectroscopy, transmission electron microscopy, and transmission electron diffraction analysis. In the initial stage of the deposition, carbon implanted into silicon induced the formation of silicon carbide, even at room temperature. Further carbon ion bombardment then led to the formation of a carbon film. The film properties were sensitive to the deposition temperature but not to the ion energy. Films deposited at room temperature consisted mainly of amorphous carbon. Deposition at a higher temperature, or post-deposition annealing, led to the formation of microcrystalline graphite. A deposition temperature above 800-degrees-C favored the formation of microcrystalline graphite with a preferred orientation in the (0001) direction. No evidence of diamond formation in these films was observed.

An introduction to the trapping of clusters with ion traps and electrostatic storage devices

This paper presents an introduction to the application of ion traps and storage devices for cluster physics. Some experiments involving cluster ions in trapping devices such as Penning traps, Paul traps, quadrupole or multipole linear traps are briefly discussed. Electrostatic ion storage rings and traps which allow for the storage of fast ion beams without mass limitation are presented as well. We also report on the recently developed mini-ring, a compact electrostatic ion storage ring for cluster, molecular and biomolecular ion studies.

Studies on the flavones using liquid chromatography-electrospray ionization tandem mass spectrometry

Fragmentation pathways of nine flavone compounds have been studied by using electrospray ionization multi-stage tandem mass spectrometry (ESI-MSn). Analyzing the product ion spectra of flavonoids and aglycones, we observed some diagnostic neutral losses, such as *CH3, H2O, residue of glucose and gluconic acid, which are very useful for the identification of the functional groups in the structures. Furthermore, specific retro Diels-Alder (RDA) fragments for flavones with different hydroxyl substitution have also been discussed. The information is helpful for the rapid identification of the location site of hydroxyl substitution on flavones. Fragmentation pathways of C-glycosidic flavonoid have also been discussed using ESI-MSn, demonstrating ions [M-H-60](-), [M-H-90](-), [M-H-120](-) are characteristic ions of C-glycosidic flavonoid. According to the fragmentation mechanism of mass spectrometry and HPLC-MS data, the structures of seven flavones in Scutellaria baicalensis Georgi have been identified on-line without time-consuming isolation. The HPLC-ESI-MSn method for analyzing constituents in the Scutellaria baicalensis Georgi has been established.

Characterization of non-covalent complexes of rutin with cyclodextrins by electrospray ionization tandem mass spectrometry

Electrospray ionization tandem mass spectrometry (ESI-MSn) and the phase solubility method were used to characterize the gas-phase and solution-phase non-covalent complexes between rutin (R) and alpha-, beta- and gamma-cyclodextrins (CDs). The direct correlation between mass spectrometric results and solution-phase behavior is thus revealed. The order of the 1:1 association constants (K-c) of the complexes between R and the three CDs in solution calculated from solubility diagrams is in good agreement with the order of their relative peak intensities and relative collision-induced dissociation (CID) energies of the complexes under the same ESI-MSn condition in both the positive and negative ion modes. Not only the binding stoichiometry but also the relative stabilities and even binding sites of the CD-R complexes can be elucidated by ESI-MSn. The diagnostic fragmentation of CD-R complexes, with a significant contribution of covalent fragmentation of rutin leaving the quercetin (Q) moiety attached to the CDs, provides convincing evidence for the formation of inclusion complexes between R and CDs. The diagnostic fragment ions can be partly confirmed by the complexes between Q and CDs. The gas-phase stability order of the deprotonated CD-R complexes is beta-CD-R > alpha-CD-R > gamma-CD/R; beta-CD seems to bind R more strongly than the other CDs.