Photoelectron angular distributions from above threshold ionization of hydrogen atoms in strong laser fields

We apply a scattering theory of nonperturbative quantum electrodynamics to study the photoelectron angular distributions (PADs) of a hydrogen atom irradiated by linearly polarized laser light. The calculated PADs show main lobes and jetlike structure. Previous experimental studies reveal that in a set of above-threshold-ionization peaks when the absorbed-photon number increases by one, the jet number also increases by one. Our study confirms this experimental observation. Our calculations further predict that in some cases three more jets may appear with just one-more-photon absorption. With consideration of laser-frequency change, one less jet may also appear with one-more-photon absorption. The jetlike structure of PADs is due to the maxima of generalized phased Bessel functions, not an indication of the quantum number of photoelectron angular momentum states.

Theoretical investigation on excitation, ionization and capture in H(1s, 2s)+H(1s, 2s) collisions

Cross sections of electron- loss in H( 1s)+ H( 1s) collisions and total collisional destruction of H( 2s) in H( 1s) + H( 2s) collisions are calculated by four- body classical- trajectory Monte Carlo ( CTMC) method and compared with previous theoretical and experimental data over the energy range of 4 - 100 keV. For the former a good agreement is obtained within di. erent four- body CTMC calculations, and for the incident energy Ep > 10 keV, comparison with the experimental data shows a better agreement than the results calculated by the impact parameter approximation. For the latter, our theory predicts the correct experimental behaviour, and the discrepancies between our results and experimental ones are less than 30%. Based on the successive comparison with experiments, the cross sections for excitation to H( 2p), single- and double- ionization and H- formation in H( 2s)+ H( 2s) collisions are calculated in the energy range of 4 - 100 keV for the. rst time, and compared with those in H( 1s)+ H( 1s) and H( 1s)+ H( 2s) collisions.

Influence of Coulomb potential for photoionization of H atoms in an elliptically polarized laser field: Velocity gauge versus length gauge

We theoretically study the influence of Coulomb potential for photoionization of hydrogen atoms in an intense laser field with elliptical polarization. The total ionization rates, photoelectron energy spectra, and photoelectron angular distributions are calculated with the Coulomb-Volkov wave functions in the velocity gauge and compared with those calculated in the length gauge as well as those calculated with the Volkov wave functions. By comparing the results obtained by the Coulomb-Volkov and Volkov wave functions, we find that for linear polarization the influence of Coulomb potential is obvious for low-energy photoelectrons, and as the photoelectron energy and/or the laser intensity increase, its influence becomes smaller. This trend, however, is not so clear for the case of elliptical polarization. We also find that the twofold symmetry in the photoelectron angular distributions for elliptical polarization is caused by the cooperation of Coulomb potential and interference of multiple transition channels. About the gauge issue, we show that the difference in the photoelectron angular distributions obtained by the velocity and length gauges becomes rather obvious for elliptical polarization, while the difference is generally smaller for linear polarization.

Photoionization of H atoms in few-cycle laser pulses

Photoionization of hydrogen atoms in few-cycle laser pulses is studied numerically. The total ionization probability, the. instantaneous ionization probability; and the partial ionization probabilities in a pair of opposite directions are obtained. The partial ionization probabilities are not always equal to each other which is termed as inversion asymmetry. The variation of asymmetry degree with the CE phase, the pulse duration and the pulse intensity is studied. It is found that the pulse intensity affects the asymmetry degree in many aspects. Firstly, the asymmetry is more distinct at higher intensities than that at lower intensities when the pulse duration exceeds 4 cycles; secondly, the maximal asymmetry in lower intensities varies with the CE phase visibly while at higher intensities riot; thirdly, the partial ionization probabilities equal to each other for some special CE phases. For lower pulse intensities, the corresponding value of CE phase is always 0.5 pi and 1.5 pi, while for higher pulse intensities, the corresponding value varies with the pulse intensity. Similar phenomena were observed in a recent experiment using few-cycle radio-frequency (RF) pulses.

THE EFFECT OF PASSIVATION OF BORON DOPANTS BY HYDROGEN IN NANO-CRYSTALLINE AND MICROCRYSTALLINE SILICON FILMS

It is well known that the value of room-temperature conductivity sigma(RT) of boron-doped silicon films is one order lower than that of phosphorus-doped silicon films, when they are deposited in an identical plasma-enhanced chemical vapour deposition system. We use surface acoustic wave and secondary-ion mass spectrometry techniques to measure the concentration of total and electrically active boron atoms. It is shown that only 0.7% of the total amount of incorporated boron is electrically active. This is evidence that hydrogen atoms can passivate substitutional B-Si bonds by forming the neutral B-H-Si complex. By irradiating the boron-doped samples with a low-energy electron beam, the neutral B-H-Si complex converts into electrically active B-Si bonds and the conductivity can be increased by about one order of magnitude, up to the same level as that of phosphorus-doped samples.

The role of hydrogen in semi-insulating INP

Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimer and other infrared absorption lines, tentatively be assigned to hydrogen related defects were investigated by FTIR. Hydrogen cam passivate imperfections, thereby eliminating detrimental electronic states from the energy bandgap. Incorporated hydrogen can introduce extended defects and generate electrically-active defects. Hydrogen also can acts as an actuator for creating of antistructure defects. Isolated hydrogen related defects(e.. H-2*) may play an important role in the conversion of the annealed wafers from semiconducting to the semi-insulating behavior. H-2* may be a deep donor, whose energy level is very near the iron deep acceptor level in the energy gap.

Hydrogen-deuterium exchange reactions of cis- and trans-cyclopropane derivatives with D2O and CD3OD in the gas phase

Gas-phase hydrogen-deuterium (H/D) exchange reactions involving four isomeric cyclopropane derivatives were investigated under chemical ionization (CI) conditions, using D2O and CD3OD as reagent gases. There are abundant ions at [M + 1](+), [M + 2](+) and [M + 3](+) in the D2O and CD3OD positive-ion CI mass spectra of the two isomer pairs 1, 2 and 3, 4, Their CI mass spectra are identical with each pair, and so are the collision-induced dissociation (CID) spectra of ions [M + 1](+), [M + 2](+) and [M + 3](+) of each of the two isomer pairs. The CID spectra of [M + 1](+) ions indicate that they have common D/H exchange reactions within each pair, which take place between molecular ions and deuterium-labeling reagents to form the [M - H + D](+) ions. Those of their [M + 2](+) ions show that they have common D/H exchange reactions within each pair, which form the [M-d1 + H](+) ions. Those of their [M + 3](+) ions show that they have common D/H exchange reactions within each pair, which take place between the [M-d1] and deuterium-labeling reagents to produce [Md-2 + H](+) for the isomer pair 1, 2 and [M-d1 + D](+) for the Isomer pair 3, 4. The number and position, and active order of the active hydrogen atoms of the isomer pairs 1, 2 and 3, 4 were determined. Copyright (C) 2000 John Wiley & Sons, Ltd.

The microstructure and its high-temperature annealing behaviours of a-Si : O : H film

The microstructure and its annealing behaviours of a-Si:O:H film prepared by PECVD are investigated in detail using micro-Raman spectroscopy, X-ray photoelectron spectroscopy and Infrared absorption spectroscopy. The results indicate that the as-deposited a-Si:O:H film is structural inhomogeneous, with Si-riched phases surrounded by O-riched phases. The Si-riched phases are found to be nonhydrogenated amorphous silicon (a-Si) clusters, and the O-riched phases SiOx:H (x approximate to 1. 35) are formed by random bonding of Si, O and H atoms. By high-temperature annealing at 1150 degreesC, the SiOx:H (x approximate to 1.35) matrix is shown to be transformed into SiO2 and SiOx ( x approximate to 0.64), during which all of the hydrogen atoms in the film escape and some of silicon atoms are separated from the SiOx:H ( x approximate to 1.35) matrix; The separated silicon atoms are found to be participated in the nucleation and growth processes of solid-phase crystallization of the a-Si clusters, nano-crystalline silicon (ne-Si) is then formed. The microstructure of the annealed film is thereby described with a multi-shell model, in which the ne-Si clusters are embedded in SiOx (x = 0.64) and SiO2. The former is located at the boundaries of the nc-Si clusters, with a thickness comparable with the scale of nc-Si clusters, and forms the transition oxide layer between the ne-Si and the SiO2 matrix.

A surface kinetics model for the growth of Si1-xGex by UHV/CVD using SiH4/CeH4

The surface reaction mechanism of Si1-xGex/Si growth using SiH4 and GeH4 in UHV/CVD system was studied. The saturated adsorption and desorption of SiH4 from Si(1 0 0) surface was investigated with the help of TPD and RHEED, and it was found that all the 4 hydrogen atoms of one SiH4 molecule were adsorbed to the Si surface, which meant that the dissociated adsorption ratio was proportional to 4 power of surface vacancies. The analysis of the reaction of GeH4 was also done. A new surface reaction kinetic model on Si1-xGex/Si epitaxial growth under UHV conditions by SiH4/GeH4 was proposed based on these studies. The predictions of the model were verified by the experimental results. (C) 2000 Elsevier Science B.V. All rights reserved.

INVESTIGATION OF THE GROWN DIAMOND (100) SURFACE USING HIGH-RESOLUTION ELECTRON-ENERGY LOSS SPECTROSCOPY

The diamond (100) facets deposited at initial 1.0% CH4 have been investigated using high resolution electron energy loss spectroscopy (HREELS). The diamond (100) facets grown at 800-degrees-C are terminated by CH2 radicals, and there is no detectable frequency shift compared with the characteristic frequencies of molecular subgroup CH2. Beside the CH2 vibration loss, CH bend loss (at 140 meV) of locally monohydrogenated dimer is detected for the diamond (100) facets grown at 1000-degrees-C. Dosing the (100) facets grown at 800-degrees-C with atomic hydrogen at 1*10(-6) mbar, the loss peak at 140 meV appears. It is suggested that there are enough separately vacant sites and uniformly dispersed monohydrogenated dimers on (100) facets. This structure relaxes the steric repulsion between the adjacent hydrogen atoms during the diamond (100) surface growth.

PROTON-IMPLANTED NEW TYPE SILICON MATERIAL SUBJECTED TO 2-STEP FURNACE ANNEALING

A high-resistivity defect layer buried beneath the silicon surface layer by using proton implantation and two-step conventional furnace annealing is described. During the first annealing step (600-degrees-C), implanted hydrogen atoms move towards the damage region and then coalesce into hydrogen gas bubbles at the residual defect layer. During the second annealing step (1180-degrees-C) these bubbles do not move due to their large volume. Structural defects are formed around the bubbles at a depth of approximately 0.5-mu-m. The defect layer results in a high resistivity value. Experiments show that the quality of the surface layer has been improved because the surface Hall mobility increased by 20%. The sample was investigated by transmission electron microscopy.

Formation mechanism of defects in annealed InP

Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtained by high pressure, high temperature annealing of high purity materials is proposed. Local vibrational modes in tenths of InP samples reveal clearly existence of complexes related to hydrogen. Complexes of vacancy at indium site with one to four hydrogen atoms and isolated hydrogen or hydrogen dimers, complexes of hydrogen with various impurities are investigated by FTIR. Hydrogen can acts as an actuator for generation of antistructure defects. Fully hydrogenated indium vacancy dissociates leaving large lattice relaxation behind, deep donors, mainly larger complexes involving phosphorus at indium site and isolated hydrogen defects are created in nominally undoped InP after annealing. Also created are acceptor levels such as vacancy at indium site. Carrier charge compensation mechanism in nominally undoped InP upon annealing at high temperature is given. Microscopic models of hydrogen related defects are given. Structural, electronic and vibrational properties of LVMs related to hydrogen as well as their temperature effect are discussed.

Evidence of strong projectile-target-core interaction in single ionization of neon by electron impact

The momentum distributions of recoil ions were measured in the single ionization of neon by electron impact at incident energies between 80 and 2300 eV. It was found that there are a noticeable number of recoil ions carrying large momenta, and the relative contributions of these ions becomes more pronounced with the further decrease of incident electron energy. These observed behaviors indicate that there is a strong projectile-target-core interaction in the single-ionization reaction. By comparing our results with those of electron-neon elastic scattering, we concluded that the elastic scattering of the projectile electron on the target core plays an important role at low and intermediate collision energies.