The effect of OH- groups on the spectroscopic properties of erbium-doped tellurite glasses

A series of five different concentration erbium-doped tellurite glasses with various hydroxl groups were prepared. Infrared spectra of glasses were measured. In order to estimate the exact content of OH- groups in samples, various absorption coefficients of the OH- vibration band were analyzed under the different oxygen bubbling times. The absorption spectra of the glasses were measured, and the Judd-Ofelt intensity parameters Omega(i) of samples with the different erbium ions concentration and OH- contents were calculated on the basis of the Judd-Ofelt theory. The peak stimulated emission cross-section of (I13/2 ->I15/2)-I-4-I-4 transition of the samples was finally calculated by using the McCumber theory. The fluorescence spectra of Er3+:I-4(13/2)->I-4(15/2) transition and the lifetime of Er3+:I-4(13/2) level of the samples were measured. The effects of OH- groups on the spectroscopic properties of Er3+ doped samples with the different concentrations were discussed. The results showed that the OH- groups had great influences on the Er3+ lifetime and the fluorescence peak intensity. The OH- group is a main influence factor of fluorescence quenching when the doping concentration of Er2O3 is smaller than 1.0 mol%, but higher after this concentration, the energy transfer of Er3+ ions turns into the main function of the fluorescence quenching. And basically, there is no influence on the other spectroscopic properties (FWHM, absorption spectra, peak stimulated emission cross section, etc.).

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

A new method was used to prepare erbium-doped high silica (SiO2% > 96%) glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM (Full Wave at Half Maximum) of 50 nm, wider than 35 nm of EDSFA (erbium-doped silica fiber amplifer), and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass (6 x 103) is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

有源波导环形谐振腔滤波特性分析

将掺铒有源波导材料引入环形谐振腔结构，从理论上分析了有源波导环形谐振腔的滤波特性。结果表明由于抽运光提供的增益补偿了腔内损耗，使得环形谐振腔满足临界耦合条件，实现对信号光的最佳陷波，同时发现通过改变抽运光功率，可以对精细度和带宽进行动态调谐。分析了铒离子掺杂浓度、信号光功率以及抽运光耦合系数对最佳陷波抽运功率的影响，为有源波导器件设计制作提供了理论依据。

K9玻璃薄膜对离子交换磷酸盐玻璃波导表面保护的优化研究

采用镀K9玻璃薄膜方法来解决离子交换掺铒磷酸盐玻璃波导表面的侵蚀问题,对K9玻璃薄膜的厚度进行了优化研究。测量分析了样品的荧光光谱和荧光寿命,采用光学显微镜和棱镜耦合技术对不同K9玻璃薄膜厚度下制备波导的表面形貌和导光特性进行了表征和测试。结果表明,与掺铒磷酸盐玻璃原材料相比,镀K9玻璃薄膜后荧光光谱保持不变,荧光寿命稍有下降(约0.2 ms);K9玻璃薄膜的厚度在60~80 nm的范围内保护效果最佳。为下一步制备掺铒有源玻璃光波导器件奠定了良好的实验基础。

掺铒磷酸盐玻璃波导放大器的特性研究

研究了掺铒磷酸盐玻璃波导放大器的特性。利用重叠因子将980nm光抽运的掺铒玻璃波导放大器四能级模型的速率-传输方程进行化简，在考虑上转换效应和放大自发发射的情况下．利用数值模拟的方法，得到了掺铒玻璃波导放大器的增益与Er^3+离子浓度、抽运功率、波导长度等参量之间的关系曲线；同时模拟出放大自发发射曲线并与实验测量结果进行比较。结果表明在考虑上转换效应和放大自发发射的情况下,理论结果和实验测量结果是一致的。同时看到，选择合适的铒离子浓度是制作掺铒玻璃波导放大器的关键；并且为了全面发挥掺铒玻璃波导放大器的性能

Strong visible and infrared photoluminescence from Er-implanted silicon nitride films

Silicon nitride films were deposited by plasma-enhanced chemical-vapour deposition. The films were then implanted with erbium ions to a concentration of 8 x 10(20) cm(-3). After high temperature annealing, strong visible and infrared photoluminescence (PL) was observed. The visible PL consists mainly of two peaks located at 660 and 750 nm, which are considered to originate from silicon nanocluster (Si-NCs) and Si-NC/SiNx interface states. Raman spectra and HRTEM measurements have been performed to confirm the existence of Si-NCs. The implanted erbium ions are possibly activated by an energy transfer process, leading to a strong 1.54 mu m PL.

EFFECT OF THE CONCENTRATION OF THE ER3+ ION ON THE SPECTRAL INTENSITY PARAMETERS OF ER-YAG CRYSTALS

The absorption spectra of Er:YAG (YAG, yttrium-aluminium-garnet) crystals containing different concentrations of the trivalent erbium ion were measured and the spectral intensity parameters were calculated from these experimental spectra using the Judd-Ofelt model. The results indicate that the phenomenological intensity parameters, OMEGA(lambda) (lambda = 2, 4 and 6), vary as a function of the concentration of the Er3+ ion in the Er:YAG crystal, but no variation in the fluorescence-branching ratios as a function of the concentration of the Er3+ ion is found. An empirical formula is proposed to describe the relationship between the spectral intensity parameters and the Er3+ ion concentration in the Er:YAG crystal. The spectral intensity parameters exhibit a maximum in Er:YAG crystals containing about 1-1.5 at.% Er3+ ion. The effect of the Er3+ ion concentration on the spectral intensity parameters may be attributed to the inhomogeneous lattice distortion in the cell of the Er:YAG crystal caused by the dopant erbium ions.

Effect of network modifiers on spectroscopic properties of erbium-doped phosphate glasses

The integrated absorption cross section Sigma(abs), I peak emission cross section sigma(cmi), Judd-Ofeld intensity parameters Omega(iota) ( t = 2,4,6), and spontaneous emission probability A(R) of Er3+ ions were determined for Erbium doped alkali and alkaline earth phosphate glasses. It is found the compositional dependence of sigma(emi) 5 almost similar to that of Sigma(abs), which is determined by the sum, of Omega(1) (3 Omega(2) + 10 Omega(4) + 21 Omega(6)). In addition, the compositional dependence of Omega(1) was studied in these glass systems. As a result, compared with. Omega(4) and Omega(6) the Omega(2) has a stronger compositional dependence on the ionic radius and content of modifers. The covalency of Er-O bonds in phosphate glass is weaker than that in silicate glass, germanate glass, aluminate glass, and tellurate glass, since Omega(6) of phosphate glass is relatively large. A(R) is affected by the covalency of the Er3+ ion sites and corresponds to the Omega(6) value.

Novel erbium-doped TeO2-based oxysulfide glasses: thermal and spectroscopic properties

Er3+-doped TeO2-based oxysulfide glasses have been prepared in argon atmosphere in carbon crucibles. The thermal analysis and spectroscopic properties of Er (3+) have been considered in terms of sulfide influence. As a function of composition, we have principally measured optical absorption, spontaneous emission and lifetime measurements. Judd-Ofelt theory was introduced to calculate bandwidth and emission cross-section. The results show the product FVMM x sigma(c) increase from 476.8 8 to 635.04 10(-21) cm(2) nm evidently with the addition of 10 mol% PbS into tellurite glass, which indicates a perfect effect on spectra property of Er3+ ions. (C) 2004 Elsevier B.V. All rights reserved.

Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method

Er/Bi codoped SiO2 thin films were prepared by sol-gel method and spin-on technology with subsequent annealing process. The bismuth silicate crystal phase appeared at low annealing temperature while vanished as annealing temperature exceeded 1000 degrees C, characterized by X-ray diffraction, and Rutherford backscattering measurements well explained the structure change of the films, which was due to the decrease of bismuth concentration. Fine structures of the Er3+-related 1.54 mu m light emission (line width less than 7 nm) at room temperature was observed by photoluminescence (PL) measurement. The PL intensity at 1.54 gm reached maximum at 800 degrees C and decreased dramatically at 1000 degrees C. The PL dependent annealing temperature was studied and suggested a clear link with bismuth silicate phase. Excitation spectrum measurements further reveal the role of Bi3+ ions for Er3+ ions near infrared light emission. Through sol-gel method and thermal treatment, Bi3+ ions can provide a perfect environment for Er3+ ion light emission by forming Er-Bi-Si-O complex. Furthermore, energy transfer from Bi3+ ions to Er3+ ions is evidenced and found to be a more efficient way for Er3+ ions near infrared emission. This makes the Bi3+ ions doped material a promising application for future erbium-doped waveguide amplifier and infrared LED

A comparison of silicon oxide and nitride as host matrices on the photoluminescence from Er3+ ions

This paper compares the properties of silicon oxide and nitride as host matrices for Er ions. Erbium-doped silicon nitride films were deposited by a plasma-enhanced chemical-vapour deposition system. After deposition, the films were implanted with Er3+ at different doses. Er-doped thermal grown silicon oxide films were prepared at the same time as references. Photoluminescence features of Er3+ were inspected systematically. It is found that silicon nitride films are suitable for high concentration doping and the thermal quenching effect is not severe. However, a very high annealing temperature up to 1200 degrees C is needed to optically activate Er3+ which may be the main obstacle to impede the application of Er-doped silicon nitride.

Photoluminescence of erbium-doped hydrogenated amorphous SiOx(0 < x < 2)

Hydrogenated amorphous SiOx films are fabricated via plasma enhanced chemical vapor deposition technique. After erbium implantation and rapid thermal annealing, photoluminescence (PL) are measured at 77 K and room temperature (RT), respectively. We observed the strong PL at 1.54 mu m at RT. The 1.54 mu m PL intensity changes with the variation of concentration of oxygen. The most intense PL at 77 K in a-SiOx:H (Er) corresponds to O/Si = 1.0 and at RT to O/Si = 1.76. Based on our results, we propose that Er ions contributed to PL come from O-rich region in the film. Er ions in Si-rich region have no relation with FL. Temperature dependence of the intensity of the 1.54 mu m line of the Er3+ transition displays a very weak temperature quenching in Er-doped hydrogenated amorphous Si. The PL intensity at 250 K is a little more one half of that at 15 K.

Photoluminescence from Erbium-implanted silicon-rich SiO2

Si-rich SiO2 films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 x 10(15) cm(-2) 400 keV Er ions. After annealing at 800 degrees C for 5 min the samples show room temperature luminescence around 1.54 mu m, characteristic of intra-4f emission from Er3+, upon excitation using an Ar ion laser.

Modeling and optimizing of high-concentration erbium-doped fiber amplifiers with consideration of ion-clusters

Starting from the modeling of isolated ions and ion-clusters, a closed form rate and power evolution equations for high-concentration erbium-doped fiber amplifiers are constructed. Based on the equations, the effects of the fraction of ion-clusters in total ions and the number of ions per cluster on the performance of high-concentration erbium-doped fiber amplifiers are analyzed numerically. The results show that the presence of the ion-clusters deteriorates amplifier performance, such as the signal power, signal gain, the threshold pump power for zero gain, saturated signal gain, and the maximum gain efficiency, etc. The optimum fiber length or other parameters should be modified with the ion-clusters being taken into account for the amplifiers to achieve a better performance. (c) 2007 Elsevier B.V. All rights reserved.

Preparation and characterization of erbium doped sol-gel silica glasses

Erbium-doped silica glasses were made by sol-gel process. Intensive photoluminescence (PL) spectra from the Er-doped silica glasses at room temperature were measured. A broadband peak at 1535 ma, corresponding to the I-4(13/2)-I-4(15/2) transition, its full width at half-maximum (FWHM) of 10 nm, and a shoulder at 1546 nm in the PL spectra were observed. At lower temperatures, main line of 1535 nm and another line of 1552 Mn instead of 1546 nm appear. So two types of luminescence centers must exist in the samples at different temperature. The intensity of main line does not decrease obviously with increasing temperature. By varying the Er ion concentration in the range of 0.2 wt% - 5wt%, the highest photoluminescence intensity was obtained at 0.2wt% erbium doped concentration. Luminescence intensity decreases with increasing erbium concentration. Cooperative upconversion was used to explain the concentration quenching of luminescence from silica glass with high erbium concentration. Extended X-ray absorption fine structure measurements were carried out. It was found that the majority of the erbium impurities in the glasses have a local structure of eight first neighbor oxygen atoms at a mean distance of 0.255 nm, which is consistent with the typical coordination structure of rare earth ion.