Photoluminescence from Erbium-implanted silicon-rich SiO2
| Data(s) |
1998
|
|---|---|
| Resumo |
Si-rich SiO2 films were deposited by plasma-enhanced chemical vapor deposition on the silicon substrates, and then implanted with 1 x 10(15) cm(-2) 400 keV Er ions. After annealing at 800 degrees C for 5 min the samples show room temperature luminescence around 1.54 mu m, characteristic of intra-4f emission from Er3+, upon excitation using an Ar ion laser. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Lei HB; Yang QQ; Zhu JL; Gao JH; Wang HJ; Wang QM .Photoluminescence from Erbium-implanted silicon-rich SiO2 ,CHINESE PHYSICS LETTERS,1998,15(1):72-73 |
| Palavras-Chave | #半导体物理 |
| Tipo |
期刊论文 |
