Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers

The work was supported in part by the National Natural Science Foundation of China under Grant 60536010, Grant 60606019, Grant 60777029, and Grant 60820106004, and in part by the National Basic Research Program of China under Grant 2006CB604902, Grant 2006CB302806, and Grant 2006dfa11880.

A small signal equivalent circuit model for resonant tunnelling diode

We report a resonant tunneling diode (RTD) small signal equivalent circuit model consisting of quantum capacitance and quantum inductance. The model is verified through the actual InAs/In0.53Ga0.47As/AlAs RTD fabricated on an InP substrate. Model parameters are extracted by fitting the equivalent circuit model with ac measurement data in three different regions of RTD current-voltage (I-V) characteristics. The electron lifetime, representing the average time that the carriers remain in the quasibound states during the tunneling process, is also calculated to be 2.09 ps.

Small Signal Equivalent Circuit Model and Modulation Properties of Vertical Cavity-Surface Emitting Lasers

Small signal equivalent circuit model and modulation properties of vertical cavity-surface emitting lasers (VCSEL's) are presented. The modulation properties both in analytic-equation calculation and in circuit model simulation are studied. The analytic-equation calculation of the modulation properties is calculated by using Mathcad program and the circuit model simulation is simulation is simulated by using Pspice program respectively. The results of calculation and the simulation are in good agreement with each other. Experiment is performed to testify the circuit model.

Small signal equivalent circuit model of vertical cavity surface emitting lasers

Small signal equivalent circuit model of vertical cavity surface emitting lasers (VCSEL's) is given in this paper. The modulation properties of VCSEL are simulated using this model in Pspice program. The simulation results are good agree with experiment data. Experiment is performed to testify the circuit model.

Overall optimization of high-speed semiconductor laser modules

Based on the high frequency techniques such as frequency response measurement, equivalent circuit modeling and packaging parasitics compensation, a comprehensive optimization method for packaging high-speed semiconductor laser module is presented in this paper. The experiments show that the small-signal magnitude frequency response of the TO packaged laser module is superior to that of laser diode in frequencies, and the in-band flatness and the phase-frequency linearity are also improved significantly.

Frequency bandwidth estimation of TO packaging techniques for laser modules

Two simple methods for estimating the potential modulation bandwidth of TO packaging technique are presented. The first method is based upon the comparison of the measured frequency responses of the laser diodes and the TO laser modules, and the second is from the equivalent circuit for the test fixture, the TO header, the submount and the bonding wire. It is shown that the TO packaging techniques used in the experiments can potentially achieve a frequency bandwidth of over 10.5 GHz, and the two proposed methods give similar results.

Electrical and optical coupling in an electroabsorption modulator integrated with a DFB laser

Electrical and optical coupling in an electroabsorption (EA) modulator integrated with a distributed feedback (DFB) laser have been investigated. The integrated device is treated as a three-port optoelectronic device with two electrical ports and one optical output port. The scattering parameters of this three-port device have been measured in the designed experiment. The measured results indicate that there exists the electrical coupling between the DFB laser and EA modulator of the integrated light source whenever the current applied to the laser section is below or above the threshold current, and the optical coupling will have stronger influence on the frequency responses than the electrical coupling when the bias current is above the threshold. A small-signal equivalent circuit model for the integrated device is established considering both the electrical and internal optical coupling. Experiments show that the equivalent circuit model is reasonable and the determined element values are correct. Based on the measurement and modeling, the influences of the electrical and optical coupling on the high-frequency responses are investigated and the effective measure to eliminate the additional modulation in the DFB laser are discussed.

Characterization of parasitics in TO-packaged high-speed laser modules

An elaborate analysis of the parasitic network of high-speed through-hole packaging (TO)-type laser modules is presented using a small-signal equivalent circuit model. The intrinsic laser diode is obtained using the optical modulation technique, and is embedded into the model as a separate component. Three step-by-step measurements are made for determining the packaging parasitic network, including the test fixture, TO header, submount, bonding wire, and parasitics of the laser chip. A good agreement between simulated and measured results confirms the validation and accuracy of the characterization procedures. Furthermore, several key parasitic elements are found based on the simulation of the high-frequency responses of the packaged devices. It is expected that the 3-dB bandwidth of 12 GHz or more of the low-cost TO packaged laser module may be achieved using the proposed optimization method.

Potential frequency bandwidth estimation of TO packaging techniques for photodiode modules

Scattering parameters of photodiode chip, TO header and TO packaged module are measured, and the effects of TO packaging network on the high-frequency response of photodiode are investigated. Based on the analysis, the potential bandwidth of TO packaging techniques is estimated from the scattering parameters of the TO packaging network. Another method for estimating the potential bandwidth from the equivalent circuit for the TO packaged photodiode model is also presented. The results obtained using both methods show that the TO packaging techniques used in the experiments can potentially achieve a frequency bandwidth of 22 GHz.

Fabrication and characterization of TO packaged high-speed laser modules - art. no. 682407

Various high-speed laser modules are fabricated by TO-Packaged processes, such as FP laser modules, DFB laser modules, and VCSEL modules. Furthermore,, the resonance among the circuit elements provides an approach to compensating the TO packaging parasitics, and improving the frequency response of the devices. The detailed equivalent circuit model is established to investigate both the laser diode and packaging comprehensively. The small-signal modulation bandwidths of the TO packaged FP laser, DFB laser and the VCSEL modules are more than 10, 9.7 and 8 GHz, respectively.

Study of the capacitance coupling in accelerators

The relation between the input impedance and the characteristic parameters of a cavity, such as the resonance frequency, shunt impedance and. the quality factor, has been obtained based on the equivalent circuit of the cavity and the coupling system. Using the matching condition, the ratio of coupling capacitance to the equivalent capacitance of the cavity can be acquired as a function of the characteristic parameters of the cavity, the value of the coupling capacitance can be obtained with a help of a numerical simulation and the perturbation theory, and then the perfect matching between the cavity and the transmission line can be procured. The application of these results on a model cavity is presented too.

Study of the ionic conductivity of polymer electrolyte using imaginary impedance spectroscopy

Polymeric electrolytes of (PEO1)(10) LiClO4-Al2O3 (PEO: poly (ethyleneoxide)) and (PEO2)(16)LiClO4-EC (EC: ethylene carbonate) were prepared. We proposed an equivalent circuit and gave the meaning of the concerned circuit elements. When the impedance spectrum deformed severely, the ionic conductivity of polymer electrolyte was determined by using the maximum of imaginary impedance, which is a convenient method.

Plasticizer effect on the ionic conductivity of PEO-based polymer electrolyte

The effects of plasticizer ethylene carbonate (EC) on the AC impedance spectra and the ionic conductivity are reported. With increasing of EC concentration the semicircle in high frequency disappears, and the slope of the straight line in low frequency decreases. The data obtained from impedance experiments can be explained using an equivalent circuit proposed. On the other hand, the room temperature conductivity increases with EC concentration because of the increase of the segmental flexibility of PEO. For lower EC concentration samples, the temperature dependence of conductivity in low temperature range follows Arrhenius type, but when EC concentration is larger than 20%, the temperature dependence of conductivity obeys the Vogel-Tamman-Fulcher (VTF) equation in all temperature ranges.

Conductive behavior and ionic conductivity of composite polymer electrolytes

The ac impedance plots of ( PEO)(16) LiClO4-EC composite polymer electrolytes were studied. The equivalent circuit of stainless steel electrode(SS)/composite electrolyte/SS system was applied to explain the ac impedance plots, The results showed that the equivalent circuit could fit the experimental data very well. The ionic conductivity was calculated using the bulk resistance that was obtained from equivalent circuit. The effect of EC on the conductive behavior was explained by the interactions among different species formed in the composite polymer electrolytes. For lower EC concentration samples, the temperature dependence of conductivity in low temperature range followed Arrhenius type, but when EC concentration was larger than 20%, the temperature dependence of conductivity obeyed the Vogel-Tamman-Fulcher (VTF) equation in all temperature ranges.

Impedance study of (PEO)(10)LiClO4-Al2O3 composite polymer electrolyte with blocking electrodes

A composite solid polymer electrolyte (SPE) of (PEO)(10)LiClO4-Al2O3 was prepared and Pt and stainless steel(SS) blocking electrodes were used for an impedance study. It was found that the semicircle in the high frequency range and the straight line in the low frequency range depend upon different blocking electrodes and polarization potentials applied in the experiments. In the equivalent circuit. two constant phase elements (CPE) have been used instead of the pure geometrical and double layer capacitances. respectively. A theoretical line calculated from their estimated values has a good correlation with the experiment data. Moreover. the equivalent circuit also can be used to explain the impedance properties of Pt and stainless steel (SS) blocking electrodes both in the high and the low frequency ranges. (C) 2001 Elsevier Science Ltd. All rights reserved.