A high-performance Si-based MOS electrooptic phase modulator with a shunt-capacitor configuration

A novel Si-based metal-oxide-semiconductor (MOS) electrooptic phase modulator including two shunt oxide layer capacitors integrated on a silicon-on-insulator (SOI) waveguide is simulated and analyzed. The refractive index near the two gate oxide layers is modified by the free carrier dispersion effect induced by applying a positive bias on the electrodes. The theoretical calculation of free carrier distribution coupled with optical guided mode propagation characteristics has been carried out. The influence of the structure parameters such as the width and the doping level of the active region are analyzed. A half-wave voltage V-pi = 4 V is demonstrated with an 8-mm active region length and a 4-mu m width of an inner rib under an accumulation mode. When decreasing the inner rib width to 1 mu m, the phase modulation efficiency is even higher, and the rise and fall times reach 50 and 40 ps, respectively, with a 1.0 x 10(17) cm(-3) doping level in the active region.

OPTICAL BISTABILITY IN A GAAS/GAALAS MULTI-QUANTUM-WELL (MQW) SELF-ELECTROOPTIC EFFECT DEVICE (SEED)

Based on a GaAs/GaAlAs MQW pin structure grown by a home-made MBE system, we have successfully fabricated a SEED. The optical bistability and related properties of the device under symmetric operation (S-SEED) and asymmetric operation are reported.

Quantitative measurement of domain inversion in RuO2 : LiNbO3 crystal by digital holographic interferometry

We quantitatively study the domain inversion in a RuO2:LiNbO3 crystal wafer by the digital holographic interferometry. The crystal wafer is placed into one arm of a Mach-Zehnder-type interferometer to record a series of holograms. Making use of the angular spectrum backward propagation algorithm, we reconstruct the optical wave field in the crystal plane. The extracted phase difference from the reconstructed optical wave field is a well linear function of the applied external voltage. We deduce that the linear electro-optic coefficient of the detected RuO2:LiNbO3 crystal sample is 9.1x10(-12) m/V. An unexpected phase contrast at the antiparallel domain wall is observed and the influence of the applied external voltage on it is studied in detail. Also the built-in internal field is quantitatively measured as 0.72 kV/mm. (c) 2006 American Institute of Physics.

The effect of an electric field on the nonlinear response of InAs/GaAs quantum dots

The refractive nonlinearities of InAs/GaAs quantum dots under a dc electric field at photon energies above its band gap energy have been studied using the reflection Z-scan technique. The effect of the dc electric field on the nonlinear response of InAs/GaAs quantum dots showed similar linear and quadratic electro-optic effects as in the linear response regime at low fields. This implies that the electro-optic effect in the nonlinear regime is analogous to the response in the linear regime for semiconductor quantum dots. Our experimental results show the potential for voltage tunability in InAs quantum dot-based nonlinear electro-optic devices.

Sub-nanosecond silicon-on-insulator optical micro-ring switch with low crosstalk

We demonstrate a sub-nanosecond electro-optical switch with low crosstalk in a silicon-on-insulator (SOI) dual-coupled micro-ring embedded with p-i-n diodes. A crosstalk of -23 dB is obtained in the 20-mu m-radius micro-ring with the well-designing asymmetric dual-coupling structure. By optimizations of the doping profiles and the fabrication processes, the sub-nanosecond switch-on/off time of < 400 ps is finally realized under an electrical pre-emphasized driving signal. This compact and fast-response micro-ring switch, which can be fabricated by complementary metal oxide semiconductor (CMOS) compatible technologies, have enormous potential in optical interconnects of multicore networks-on-chip.

Study on in-plane optical anisotropy of semiconductor materials by reflectance difference spectroscopy

In the present review, the measuring principle of reflectance difference spectroscopy (RDS) is given. As a powerful tool in the surface and interface analysis technologies, the application of RDS to the research on semiconductor materials is summarized. along with the origins of the in-plane optical anisotropy of semiconductors. And it is believed that RDS will play an important role in the electrooptic modification of Si-based semiconductor materials.

A 2x2 optical switch based on plasma dispersion effect in silicon-on-insulator

Based on Mach-Zehnder interferometer (MZI) structure, a 2 x 2 optical switch is fabricated on SOI wafer. Modulation of the refractive index of MZI arms is achieved through free carriers plasma dispersion effect of silicon. The device presents an insertion loss as low as 3.44 dB and a response time as small as 300 ns. The crosstalk and extinction ratio are -15.54 and 14.9 dB, respectively. Detailed analysis and explanation of the operating behaviors are also presented. (C) 2005 Elsevier B.V. All rights reserved.

Optimization and characterization of the guest-host polyetherketone polymer films for application in integrated optical devices

In order to optimize the loading of 3-(1, 1-dicyanothenyl)-1-phenyl-4, 5-dihydro-1H-pryazole (DCNP) in polyetherketone (PEK-c) guest-host polymer films, ten kinds of DCNP/PEK-c thin films, in which the weight per cent of DCNP changes from 5 to 50, were prepared. Their second-order nonlinear optical coefficients chi(33)((2)) at 1064 nm were measured by Using Maker fringe method after poling under the optimal poling condition. Their optical waveguide transmission losses were measured at 632.8 nm. Optimal weight per cent of the chromophore for the DCNP/PEK-c guest-host polymer system has been determined as about 20 for use in the integrated optical devices.

Determination of the macroscopic optical properties for the NAEC/PEK-c guest-host polymer films

The polyetherketone (PEK-c) guest-host polymer films doped with (4'-nitro)-3-azo-9-ethyl-carbazole (NAEC) were prepared. The films were poled by corona-onset poling at elevated temperature (COPET). The orientational order parameter of the chromophores NAEC in poled polymer film was determined by measuring the absorption spectra of the films before and after being poled. By using the two-level model, the measured dispersion of the refractive index of the polymer film, and the dispersion of the first hyperpolarizability of chromophore NAEC, the dispersion of the macroscopic second-order nonlinear optical (NLO) and linear electrooptic (EO) coefficients was evaluated for the NAEC/PEK-c guest-host polymer film. (C) 2001 Elsevier Science Ltd. All rights reserved.

Effect of the electrostatic interactions of chromophores on the macroscopic second-order nonlinear optical properties of the polymer films

The polyetherketone (PEK-c) guest-host system thin films doped with 3-(1,1-dicyanothenyl)-1-phenyl-4,5-dihydro-1H-pryazole (DCNP) were prepared. Their second-order nonlinear optical (NLO) coefficients chi(33)((2)) were measured by using Maker fringe method for the polymer films doped with different weight percents of DCNP. Experimental results indicate that the second-order NLO properties of the poled polymer films could decrease with the chromophore loading increasing when the chromophore loading reaches a fairly high level. In this paper, the relationship between the macroscopic second-order NLO coefficient and the chromophore number density was modified under considering the role of the electrostatic interactions of chromophores in the polymer film. According to the modified relationship, the macroscopic second-order NLO coefficient is no longer in direct proportion with the chromophore number density in the polymer film. The effect of the electrostatic interactions of chromophores on second-order NLO properties was discussed. The attenuation of the macroscopic second-order NLO activity can be demonstrated by the role of the chromophore electrostatic interactions at high loading of chromophore in the polymer systems.

Bond-charge calculation of electro-optic coefficients of diatomic crystals

A theoretical method has been set up to calculate the electrooptic tensor coefficients r(ijk), based on the Phillips-Van Vechten (PV) dielectric theory and the Levine bond charge model, Starting from the crystal structure data and only introducing the experimentally determined optical permittivity and dielectric constant, the electro-optic tensor coefficients r(ijk) can be quantitatively predicted, The theoretical calculations are in good agreement with experiment in the case of zinc blende and wurtzite crystals, For zinc blende crystals, the effects of covalent radii on the linear electro-optic coefficients are discussed. (C) 1997 Academic Press.