Prototype of the Superferric Dipoles for the Super-FRS of the FAIR-Project

The FAIR China Group (FCG), consisting of the Institute of Modern Physics (IMP Lanzhou), the Institute of Plasma Physics (ASIPP, Hefei) and the Institute of Electric Engineering (IEE, Beijing) developed and manufactured in cooperation with GSI, Germany a prototype of a superferric dipole for the Super-Fragment-Separator of the FAIR-project [1]. The dipole magnets of the separator will have a deflection radius of 12.5 m, a field up to 1.6 T, a gap of at least 170 mm and an effective length of more than 2 meters to bend ion beams with a rigidity from 2 T . m up to 20 T . m. The magnets operate at DC mode. These requirements led to a superferric design with a yoke weight of more than 50 tons and a maximum stored energy of more than 400 kJ. The principles of yoke, coil and cryostat construction will be presented. We will also show first results of tests and measurements realized at ASIPP and at IMP.

Formation mechanism of electric field domains

Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.

Polarization switching current of vertical cavity surface-emitting Lasers in an applied electric field

The polarization of vertical-cavity surface-emitting laser (VCSEL) can be controlled by electro-optic birefringence. We calculated the birefringence resulted from external electric field which was imposed on the top DBR of VCSEL by assuming that the two polarization modes were in the same place of the gain spectra in the absence of electric field beginning. By modifying SFM, the affection of the electric field strength on the polarization switching currents between the two polarization modes had been shown.

Formation mechanism of electric field domains

Hydrostatic pressure measurements are used to investigate the formation mechanism of electric field domains in doped weakly-coupled GaAs/AlAs superlattices. For the first plateau-like region in the I-V curve, two kinds of sequential resonant tunnelling are observed. For P<2 kbar the high-field domain is formed by the Gamma-Gamma process, while for P>2 kbar the high-field domain is formed by the T-X process. For the second plateau-libe region, the high-field domain is attributed to Gamma-X sequential resonant tunnelling. (C) 1998 Elsevier Science B.V. All rights reserved.