Transverse magnetic field effect on the current hysteresis of doped GaAs/AlAs superlattice

The influence of a transverse magnetic field up to 13 T at 1.6 K on the current-voltage, I (V), characteristics of a doped GaAs/AlAs superlattice was investigated. Current hysteresis was observed in the domain formation regions of the I (V) at zero magnetic field while applied bias was swept in both up (0-6 V) and down (6-0 V) directions. The magnitude of current hysteresis was reduced and finally disappeared with increasing transverse magnetic field. The effect is explained as the modification of the current density versus electric field characteristic by transverse magnetic fields. Calculated results based on the tunnelling current formula in a superlattice support our interpretation.

Effect of layer thickness of immiscible alloy In0.52Al0.48As on the morphology of InAs nanostructure grown on In0.52Al0.48As/InP(001)

Thickness effect of immiscible alloy InAlAs as matrix layer on the morphology of InAs nanostructure grown on InAlAs/InP (0 0 1) by solid-source molecular-beam epitaxy has been studied. Experiments demonstrate that InAs nanostructure grown on thin InAlAs matrix layer forms randomly distributed quantum dot, whereas, grown on thick InAlAs matrix layer forms one-dimension ordered mixture of quantum wire and quantum dot. This drastic modification in the nanostructure morphology is attributed to the generation of composition modulation in the immiscible InAlAs alloy with the increase of the layer thickness. (C) 2004 Elsevier B.V. All rights reserved.

Effect of InAs quantum dots on the Fermi level pinning of undoped-n(+) type GaAs surface studied by contactless electroreflectance

Self-assembled InAs quantum dots (QDs) have been fabricated by depositing 1.6, 1.8, 2.0 and 2.5 monolayer (ML) InAs on surfaces of the undoped-n(+) (UN+) type GaAs structure. Room temperature contactless electroreflectance (CER) was employed to study the built-in electric field and the surface Fermi level pinning of these QD-covered UN+ GaAs samples. The CER results show that 1.6 ML InAs QDs on GaAs do not modify the Fermi level, whereas for samples with more than 1.6 ML InAs coverage, the surface Fermi level is moved to the valence band maximum of GaAs by about 70 meV (which is independent of the InAs deposition thickness) compared to bare GaAs. It is concluded that the modification of InAs coverage on the Fermi level on the GaAs surface is due to the QDs, rather than to the wetting layer. (C) 2003 American Institute of Physics.

EFFECT OF SURFACE-STRUCTURES UPON ULTRATHIN-FILM INTERFERENCE-FRINGES

Effect of surface structures upon ultrathin film interference fringes generated from extremely thin films or epitaxial layers grown on semiconductor wafers has been studied. Since dark regions of fringes correspond to the places where the thin films are destroyed or absent, the fringes are investigated to detect uneven surfaces with undesired structures. Therefore, surface microstructures can be detected and characterized effectively by the modification of the fringes.

Size modification of Au nanoparticles induced by slow highly charged ions Ar-40(q+) irradiation

Size modification of Au nanoparticles (NPs), deposited on the Au-thick film surface and irradiated by slow highly charged ions (SHCI) 40Arq+ (3 6 q 6 12) with fixed low dose of 4.3 1011 ions/cm2 and various energy ranging from 74.64 to 290.64 keV at room temperature (293.15 K), was investigated by atomic force microscopy (AFM) and transmission electron microscopy (TEM). The effect of projectile kinetic energy on the modified size of NPs was explored by an appropriate choice of the fixed process parameters such as ion flux, irradiation temperature, incident angle, irradiation time, etc. The morphological changes of NPs were interpreted by models involving collisional mixing, Ostwald ripening (OR) and inverse Ostwald ripening (IOR) of spherical NPs on a substrate. A critical kinetic energy as well as a critical potential energy of the projectile in the Au NPs size modification process were observed.

The effect of surface structure on the photoluminescence of SnO2 nanoparticles in hydrosols and organosols

In this paper, we report the optical properties of SnO2 semiconductor nanoparticles in hydrosols and those of SnO2 semiconductor nanoparticles in organosols in which the surfaces of the particles are coated by a layer of organic surfactant molecules. The photoluminescence spectra of SnO2 semiconductor nanoparticles in the hydrosols and organosols in different conditions were measured and discussed. We conclude that the surface structure of the SnO2 semiconductor nanoparticles affects their optical properties strongly. The oxygen deficiencies on the surface of SnO2 semiconductor nanoparticles play an important role in the optical properties. The surface modification of the particles effectively removes the surface defects of the particles and enhances the intensity of luminescence.

Effect of crosslinking distribution on gas permeability and permselectivity of crosslinked polyimides

Crosslinking modification of polyimide, prepared from 3,3'4,4'-benzophenone tetracarboxyl dianhydride (BTDA) and 2,3,5,6-tetramethyl-1,4-diphenylenediamine (4MPDA), was performed by two methods, putting the polyimide in ambient environment for 4 months, and under UV irradiation for 2 or 8 h. The gas permeation properties of the crosslinked polyimides were investigated. The crosslinked polyimides induced by UV irradiation, in which crosslinking occurs in the surface layer, are of much higher gas permselectivity of hydrogen to nitrogen than that induced by the ambient environment, in which crosslinking takes place in the whole matrix, but their gas permeabilities for hydrogen are similar. (C) 1999 Elsevier Science Ltd. All rights reserved.

Antioxidant activity and cytoprotective effect of kappa-carrageenan oligosaccharides and their different derivatives

Antioxidant activity of kappa-carrageenan oligosaccharides (OM) and their chemical modification derivatives was investigated employing various established in vitro systems, such as reducing power, iron ion chelation, and total antioxidant activity using beta-carotene-linoleic acid system. The oversulfated (SD), lowly (LAD), and highly acetylated derivatives (HAD) in reducing power assay, the phosphorylated derivative (PD) in metal chelating assay, and oversulfated and phosphorylated derivatives in total antioxidant activity assay exhibited antioxidant activity higher than that of carrageenan oligosaccharides. The results indicated that the chemical modification of carrageenan oligosaccharides can enhance their antioxidant activity in vitro. The protective effects of the carrageenan oligosaccharides and their chemically modified derivatives against H2O2 and UVA (long-wave ultraviolet radiation) induced oxidative damage on rat thymic lymphocyte were investigated by measuring cell viability via 3-(4,5-dimethylthiazol-2yl)-2,5-diphenyltetrazolium bromide (MTT). Thymic lymphocyte exposure to H2O2 and UVA, a marked reduction in cell survival was observed, which was significantly prevented by carrageenan oligosaccharides and their derivatives (preincubated for 2 h) at 66.7-2000 mu g/mL. But both the carrageenan oligosaccharides and their different derivatives showed the similar protective effects on intracellular level. Taken together, these results suggest that carrageenan oligosaccharides and their derivatives show relevant antioxidant activity both in vitro and in a cell system. (C) 2005 Elsevier Ltd. All rights reserved.

Modification of nylon membrane used for affinity adsorption

Nylon membrane was modified by binding with polyhydroxyl-containing materials to increase its hydrophilicity and reduce its nonspecific interaction with proteins. The effect of binding hydrophilic materials on amount of ligand bound-Cibacron Blue F3GA (CBF) was investigated. Experimental data showed that the amount of CBF bound can be increased significantly after binding of hydrophilic materials.

Effect of variations in acid properties of HZSM-5 on the coking behavior and reaction stability in butene aromatization

In order to investigate the effect of acid properties on the coke behavior and stability of butene aromatization, we prepared the AHZSM-5 samples with various acid properties by the methods of hydrothernial treatment and K addition. The reaction of butene aromatization was carried out at 350 degrees C and 0.5 MPa in a continuous flow fixed bed. The characterization of the fresh/coked catalysts with NH3-TPD, N-2 adsorption-desorption measurement, and TG techniques has shown that a large amount of acid sites (high acid density) of the AHZMS-5 catalyst can cause a large quantity of coke deposit and serious channel blockage, and so result in a rapid loss of aromatization activity. On the contrary, after a great reduction in strong acid sites of AHZSM-5 catalyst resulting from some K-modification, the presence of only many weak acid sites also could not lessen the formation of coke nor improve the reaction stability of butene aromatization. Interestingly, the simultaneous reduction in the strong and weak acid sites to a desirable level by hydrothermal treating the AHZSM-5 catalyst at a proper temperature can effectively suppress the coke formation and channel blockage, and thus improve its olefin aromatization stability. (c) 2005 Elsevier B.V. All rights reserved.