Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating

In this letter, we present a facet coating design to delay the excited state (ES) lasing for 1310 nm InAs/GaAs quantum dot lasers. The key point of our design is to ensure that the mirror loss of ES is larger than that of the ground state by decreasing the reflectivity of the ES. In the facet coating design, the central wavelength is at 1480 nm, and the high- and low-index materials are Ta2O5 and SiO2, respectively. Compared with the traditional Si/SiO2 facet coating with a central wavelength of 1310 nm, we have found that with the optimal design the turning temperature of the ES lasing has been delayed from 90 to 100 degrees C for the laser diodes with cavity length of 1.2 mm. Furthermore, the characteristic temperature (T-0) of the laser diodes is also improved.

Blue organic light-emitting diodes based on an oxadiazole-containing organic molecule exhibiting excited state intramolecular proton transfer

A blue organic light-emitting device based on an emissive layer of 2-(2-hydroxyphenyl)-5-phenyl-1,3,4-oxadiazole (HOXD), which exhibits excited state intramolecular proton transfer (ESIPT), was presented. The device had a luminance efficiency of 0.8 cd/A and a maximum brightness of 870 cd/m(2). Our studies indicate that some EL may originate from the triplet excitation state of the enol form of HOXD.

Blue organic light-emitting devices with an oxadiazole-containing emitting layer exhibiting excited state intramolecular proton transfer

We report a blue organic light-emitting device having an emissive layer of 2-(2-hydroxyphenyl)-5-phenyl-1,3,4-oxadiazole (HOXD), that exhibits excited state intramolecular proton transfer (ESIPT). The device had a luminance efficiency of 0.8 cd/A and a maximum brightness of 870 cd/m(2). Electroluminescence spectra revealed a dominating peak at 450 nm and two additional peaks at 480 and 515 nm with a full width at half maximum of 50 nm. Our studies indicate that some EL may originate from the triplet excitation state of the enol form of HOXD.

P-6(7/2)-excited-state decay mechanism and energy-transfer processes in KMgF3 : Eu2+ and KMgF3 : EuX (X = Gd, Ce, Cr)

A four-level decay model in KMgF3:Eu2+ is proposed. The decay profiles of the P-6(7/2) excited state of Eu2+ are biexponential, and the physical implication of each term in the fit equation responsible for the model is interpreted. The evidence obtained spectroscopically for supporting the model is presented. A new method to study energy transfer between Eu2+ and X3+ in KMgF3:Eu-X (X = Gd, Ce, Cr) is established on the basis of the proposed model.

Four-level decay model of P-6(7/2) excited state of Eu2+ ion in KMgF3

A four-level model of P-6(7/2) excited state of Eu2+ ion in KMgF3: Eu2+ has been proposed. The decay profiles of the P-6(7/2) excited sstate of Eu2+ are two exponential and the physical implication of each term in the fit equation responsible for the model is interpreted. The data obtained spectroscopically are in good agreement with the fit results.

Calculations of cross sections of resonant two-photon transitions to the second excited 4f5d state in Pr3+: Y3Al5O12 using density matrix theory

The density matrix resonant two-photon absorption (TPA) theory applicable to laser crystals doped with rare earth ions is described. Using this theory, resonant TPA cross sections for transitions from the ground state to the second excited state of the 4f5d configuration in cm(4)s Pr3+:Y3Al5O12 are calculated. The peak value of TPA cross section calculated is 2.75 x 10(-50) cm(4)s which is very close to the previous experimental value 4 x 10(-50) cm(4) s. The good agreement of calculated data with measured values demonstrates that the density matrix resonant TPA theory can predict resonant TPA intensity much better than the standard second-order perturbation TPA theory.

Polaronic correction to the first excited electronic energy level in an anisotropic semiconductor quantum dot

Within the framework of second-order Rayleigh-Schrodinger perturbation theory, the polaronic correction to the first excited state energy of an electron in an quantum dot with anisotropic parabolic confinements is presented. Compared with isotropic confinements, anisotropic confinements will make the degeneracy of the excited states to be totally or partly lifted. On the basis of a three-dimensional Frohlich's Hamiltonian with anisotropic confinements, the first excited state properties in two-dimensional quantum dots as well as quantum wells and wires can also be easily obtained by taking special limits. Calculations show that the first excited polaronic effect can be considerable in small quantum dots.

Effect of inter-level relaxation and cavity length on double-state lasing performance of quantum dot lasers

Double-state lasing phenomena are easily observed in self-assembled quantum dot (QD) lasers. The effect of inter-level relaxation rate and cavity length on the double-state lasing performance of QD lasers is investigated on the basis of a rate equation model. Calculated results show that, for a certain cavity length, the ground state (GS) lasing threshold current increases almost linearly with the inter-level relaxation lifetime. However, as the relaxation rate becomes slower, the ratio of excited state (ES) lasing threshold current over the GS one decreases, showing an evident exponential behavior. A relatively feasible method to estimate the inter-level relaxation lifetime, which is difficult to measure directly, is provided. In addition, fast inter-level relaxation is favorable for the GS single-mode lasing, and leads to lower wetting layer (WL) carrier occupation probability and higher QD GS capture efficiency and external differential quantum efficiency. Besides, the double-state lasing effect strongly depends on the cavity length. (c) 2007 Elsevier B.V. All rights reserved.