Optical gain at 1550 nm from colloidal solution of Er3+-Yb3+ codoped NaYF4 nanocubes

We demonstrated optical amplification at 1550 nm with a carbon tetrachloride solution of Er3+-Yb3+ codoped NaYF4 nanocubes synthesized with solvo-thermal route. Upon excitation with a 980 nm laser diode, the nanocube solution exhibited strong near-infrared emission by the I-4(13/2) -> I-4(15/2) transition of Er3+ ions due to energy transfer from Yb3+ ions. We obtained the highest optical gain coefficient at 1550 nm of 0.58 cm(-1) for the solution with the pumping power of 200 mW. This colloidal solution might be a promising candidate as a liquid medium for optical amplifier and laser at the optical communication wavelength. (C) 2009 Optical Society of America

Deep-etched high-density fused-silica transmission gratings with high efficiency at a wavelength of 1550 nm

We describe the design, fabrication, and excellent performance of an optimized deep-etched high-density fused-silica transmission grating for use in dense wavelength division multiplexing (DWDM) systems. The fabricated optimized transmission grating exhibits an efficiency of 87.1% at a wavelength of 1550 nm. Inductively coupled plasma-etching technology was used to fabricate the grating. The deep-etched high-density fused-silica transmission grating is suitable for use in a DWDM system because of its high efficiency, low polarization-dependent loss, parallel demultiplexing, and stable optical performance. The fabricated deep-etched high-density fused-silica transmission gratings should play an important role in DWDM systems. (c) 2006 Optical Society of America.

Characteristics of 980/1550 nm WDM coupler based on planar curved waveguides

A wavelength division multiplexer (WDM) for 980/1550 nm based on planar curved waveguide coupler (CWC) is proposed. Compared with conventional parallel straight waveguide coupler (SWC), this structure has more flexibility with two variable parameters of bending radius R and minimum edge-to-edge spacing do, which are the two main parameters for the splitting ratio of coupler and decrease the complexity of device design and fabrication. Based on coupled mode theory (CMT) and waveguide theory, R and do of the WDM CWC are designed to be R = 13.28 m and d(0) = 4.39 mu m. The contrast ratio (CR) and insertion loss (IL) for 980 and 1550 nm are CR1 = 24.62 dB, CR2 = 24.56 dB and IL1 = 0.014 dB, IL2 = 0.015 dB, respectively. The 3D beam propagation method (BPM) is used to verify the validity of the design result. The influence of R and d(0) variations on the device performance is analyzed. For CR > 20 dB, the variation ranges of R and d(0) should be within -0.10 to +0.44 m and -0.05 to + 0.02 mu m, respectively. (c) 2006 Elsevier GmbH. All rights reserved.

16×16 SOI 热光波导开关阵列的研究

Submitted by zhangdi (zhangdi@red.semi.ac.cn) on 2009-04-13T11:45:31Z

Long rectangle resonator 1550 nm AlGaInAs/InP lasers

1550 nm AlGaInAs/InP long rectangle resonator lasers with three sides surrounded by SiO2 and p electrode layers are fabricated by planar technology, and room-temperature continuous-wave lasing is realized for a laser with a length of 53 mu m and a width of 2 mu m. Multiple peaks with wavelength intervals of Fabry-Perot mode intervals and mode Q factors of about 400 and a lasing mode with a Q factor over 8000 are observed from the lasing spectrum at threshold current. The numerical results of the FDTD simulation indicate that the lasing mode may be a whispering-gallery mode, which is a coupled mode of two high-order transverse modes of the waveguide.

Zero biased Ge-on-Si photodetector with a bandwidth of 4.72 GHz at 1550 nm

High quality Ge was epitaxially grown on Si using ultrahigh vacuum/chemical vapor deposition (UHV/CVD). This paper demonstrates efficient germanium-on-silicon p-i-n photodetectors with 0.8 mu m Ge, with responsivities as high as 0.38 and 0.21 A/W at 1.31 and 1.55 mu m, respectively. The dark current density is 0.37 mA/cm(2) and 29.4 mA/cm(2) at 0 V and a reverse bias of 0.5 V. The detector with a diameter of 30 mu m, a 3 dB-bandwidth of 4.72 GHz at an incident wavelength of 1550 nm and zero external bias has been measured. At a reverse bias of 3 V, the bandwidth is 6.28 GHz.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

Enhanced Plasticity of Zr-Based Bulk Metallic Glass Matrix Composite with Ductile Reinforcement

A composite material containing uniformly distributed micrometer-sized Nb particles in a Zr-based amorphous matrix was prepared by suction cast. The resulting material exhibits high fractured strength over 1550 MPa and enhanced plastic strain of about 29.7% before failure in uniaxial compression test at room temperature. Studies of the serrations on the stress-strain curves and the shear bands on the fractured samples reveal that the amplitude of the stress drop of each serration step corresponds to the extent of the propagation of a single shear band through the materials. The composite exhibits more serration steps and smaller amplitude of stress drop due to the pinning of shear band propagation by ductile Nb particles.

A New Designed Two-Dimensional Bifurcation Parallel-Plate Flow Chamber

解决平行平板流槽每次实验只能观测壁面培养细胞受一种剪应力作用的问题。作者在平行平板流槽的基础上,首次提出了一种改进后的流槽--二维平板分叉流槽。通过数值模拟,给出了流体作定常流动时,流速和壁面剪应力的分布。结果发现,利用这种二维平板分叉流槽可以研究壁面培养的细胞在不同大小剪应力作用下的力学行为。该研究结果为流槽的合理设计和使用,并分析剪应力空间分布对内皮细胞的影响有重要实际意义。

飞行高度及设计长度对锥形流乘波体优化的影响

高超声速条件下,乘波体布局具有高升阻比特性,本文应用单纯形加速法,以最大升阻比为目标,开展了锥形流乘波体布局优化设计研究.特别是,研究了在高层大气飞行时雷诺数效应与气动特性的关系,从乘波体飞行高度与设计长度两方面探讨雷诺数对乘波体优化的影响,结果表明:给定设计马赫数和圆锥角情况下,对于最大升阻比优化乘波体,其雷诺数越小,摩擦阻力越大,而升阻比越低.

MODIFIED ENGAGEMENT METHOD FOR MATRIX OPERATION

We describe a modified engagement method for matrix operation based on a two-dimensional crossed-ring interconnection network, Our method incorporates fewer steps than that reported by Bocker et al. [Appl. Opt. 22, 804 (1983)], and its performance is found to be the most efficient (minimum steps) in comparison with other systolic and/or engagement methods for matrix operation. Thus, it may be helpful for other optical and electronic implementations of matrix operations. One compact optoelectronic integrity approach for implementing the modified engagement method is briefly described. (C) 1995 Optical Society of America

Ultrafast temporal pattern generation and recognition

Ultrafast temporal pattern generation and recognition with femtosecond laser technology is presented, analyzed, and experimentally implemented. Ultrafast temporal pattern generation and recognition are realized by taking advantage of two well-known techniques: the space-time conversion technique and the ultrafast pulse measurement technique. Here the temporal pattern for the designed multiple pulses, optimized with a preassumed Gaussian spectral distribution of an ultrashort pulse, is described. With the simulation of a Gaussian spectral distribution, we realize that the uniformity of the generated multiple ultrafast temporal pulses is relevant to the repeated number of modulation periods in the mask in the spectral plane. Moreover, the change of Gaussian spectral phases with the wavelengths in the modulated phase plate is considered. Experiments of ultrafast temporal pattern recognition by the frequency-resolved optical gating (FROG) characterization technique are also given. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

High-efficiency reflective diffraction gratings in fused silica as (de)multiplexers at 1.55 mu m for dense wavelength division multiplexing application

We describe high-efficiency, high-dispersion reflection gratings fabricated in bulk fused Silica illuminated by incident lights in the C + L bands as (de)multiplexers for dense wavelength division multiplexing (DWDM) application. Based on the phenomenon of total internal reflection, gratings with optimized profile parameters exhibit diffraction efficiencies of more than 90% under TM- and TE-polarized incident lights for 101-nm spectral bandwidths (1520-1620 nm) and can reach an efficiency of greater than 97% for both polarizations at a wavelength of 1550 nm. Without loss of metal absorption, without coating of dielectric film layers, and independent of tooth shape, this new kind of grating should be of great interest for DWDM application. (C) 2005 Optical Society of America.