Hydrogen-dependent lattice dilation in GaN

Using Raman spectroscopy we have analysed the strain status of GaN films grown on sapphire substrates by NH3 source molecular beam epitaxy (MBE). In addition to the expected compressive biaxial strain, in some cases GaN films grown on c-face sapphire substrates suffer from serious tensile biaxial strain. This anomalous behaviour has been well interpreted in terms of interstitial hydrogen-dependent lattice dilation. The hydrogen concentration in the films is measured by nuclear reaction analysis (NRA). With increasing hydrogen incorporation, the residual compressive biaxial strain is first further relaxed, and then turns into tensile strain when the hydrogen contaminant exceeds a critical concentration. The hydrogen incorporation during the growth process is found to be growth-rate dependent, and is supposed to be strain driven. We believe that the strain-induced interstitial incorporation is another way for strain relaxation during heteroepitaxy, besides the two currently well known mechanisms: formation of dislocations and growth front roughening.

NUMERICAL STUDY OF DAMMANN ARRAY ILLUMINATORS

The numerical solutions of binary-phase (0, tau) gratings for one-dimensional array illuminators up to 32 are presented. Some fabrication errors, which are due to position-quantization errors, phase errors, dilation (or erosion) errors, and the side-slope error, are calculated and show that even-number array illuminators are superior to odd-number array illuminators when these fabrication errors are considered. One (0, tau) binary-phase, 8 x 16 array illuminator made with the wet-chemical-etching method is given in this paper.

Optical intrinsically fuzzy mathematical morphology for gray-scale image processing

Intrinsically fuzzy morphological erosion and dilation are extended to a total of eight operations that have been formulated in terms of a single morphological operation--biased dilation. Based on the spatial coding of a fuzzy variable, a bidirectional projection concept is proposed. Thus, fuzzy logic operations, arithmetic operations, gray-scale dilation, and erosion for the extended intrinsically fuzzy morphological operations can be included in a unified algorithm with only biased dilation and fuzzy logic operations. To execute this image algebra approach we present a cellular two-layer processing architecture that consists of a biased dilation processor and a fuzzy logic processor. (C) 1996 Optical Society of America

Fuzzy reasoning morphological operators and their optical implementation

Fuzzy-reasoning theory is widely used in industrial control. Mathematical morphology is a powerful tool to perform image processing. We apply fuzzy-reasoning theory to morphology and suggest a scheme of fuzzy-reasoning morphology, including fuzzy-reasoning dilation and erosion functions. These functions retain more fine details than the corresponding conventional morphological operators with the same structuring element. An optical implementation has been developed with area-coding and thresholding methods. (C) 1997 Optical Society of America.

FUZZY SOLID SETS FOR MATHEMATICAL MORPHOLOGY AND OPTICAL IMPLEMENTATION

Fuzzy sets in the subject space are transformed to fuzzy solid sets in an increased object space on the basis of the development of the local umbra concept. Further, a counting transform is defined for reconstructing the fuzzy sets from the fuzzy solid sets, and the dilation and erosion operators in mathematical morphology are redefined in the fuzzy solid-set space. The algebraic structures of fuzzy solid sets can lead not only to fuzzy logic but also to arithmetic operations. Thus a fuzzy solid-set image algebra of two image transforms and five set operators is defined that can formulate binary and gray-scale morphological image-processing functions consisting of dilation, erosion, intersection, union, complement, addition, subtraction, and reflection in a unified form. A cellular set-logic array architecture is suggested for executing this image algebra. The optical implementation of the architecture, based on area coding of gray-scale values, is demonstrated. (C) 1995 Optical Society of America

Fuzzy inferring mathematical morphology and optical implementation

Fuzzification is introduced into gray-scale mathematical morphology by using two-input one-output fuzzy rule-based inference systems. The fuzzy inferring dilation or erosion is defined from the approximate reasoning of the two consequences of a dilation or an erosion and an extended rank-order operation. The fuzzy inference systems with numbers of rules and fuzzy membership functions are further reduced to a simple fuzzy system formulated by only an exponential two-input one-output function. Such a one-function fuzzy inference system is able to approach complex fuzzy inference systems by using two specified parameters within it-a proportion to characterize the fuzzy degree and an exponent to depict the nonlinearity in the inferring. The proposed fuzzy inferring morphological operators tend to keep the object details comparable to the structuring element and to smooth the conventional morphological operations. Based on digital area coding of a gray-scale image, incoherently optical correlation for neighboring connection, and optical thresholding for rank-order operations, a fuzzy inference system can be realized optically in parallel. (C) 1996 Society of Photo-Optical Instrumentation Engineers.

Optoelectronic implementation of mathematical morphology

An optoelectronic implementation based on optical neighborhood operations and electronic nonlinear feedback is proposed to perform morphological image processing such as erosion, dilation, opening, closing and edge detection. Results of a numerical simulation are given and experimentally verified.

A redescription of Piguetiella denticulata Liang and, Xie (Oligochaeta, Tubificidae, Naidinae) from China, with a key to the genus Piguetiella

Piguetiella denticulata Liang & Xie, 1997 is redescribed based on the type series collected from the type locality, Songtao River, and streams of the Zhangjiajie Mountain in southwestern China, and specimens from several tributaries of the Yangtze River. This species is characterized by a large body size, the absence of eyespots and dorsal hair chaetae, the same size and shape of dorsal and ventral chaetae, the presence of 3-4 intermediate teeth on both ventral and dorsal chaetae, and an intestinal dilation in IX-X segments. The essential characteristics used to diagnose the genus are discussed and a key to the genus is provided.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.

instability of standing wave, global existence and blowup for the klein-gordon-zakharov system with different-degree nonlinearities

This paper discusses the Klein–Gordon–Zakharov system with different-degree nonlinearities in two and three space dimensions. Firstly, we prove the existence of standing wave with ground state by applying an intricate variational argument. Next, by introducing an auxiliary functional and an equivalent minimization problem, we obtain two invariant manifolds under the solution flow generated by the Cauchy problem to the aforementioned Klein–Gordon–Zakharov system. Furthermore, by constructing a type of constrained variational problem, utilizing the above two invariant manifolds as well as applying potential well argument and concavity method, we derive a sharp threshold for global existence and blowup. Then, combining the above results, we obtain two conclusions of how small the initial data are for the solution to exist globally by using dilation transformation. Finally, we prove a modified instability of standing wave to the system under study.

Properties of GaAs single crystals grown by molecular beam epitaxy at low temperatures

Properties of GaAs single crystals grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) have been studied. The results shaw that excessive arsenic atoms of about 10(20) cm(-3) exist in LTMBE GaAs in the form of arsenic interstitial couples, and cause the dilation in lattice parameter of LTMBE GaAs, The arsenic interstitial couples will be decomposed, and the excessive arsenic atoms will precipitate during the annealing above 300 degrees C. Arsenic precipitates accumulate in the junctions of epilayers with the increase in the temperature of annealing. The depletion regions caused by arsenic precipitates overlap each other in LTMBE GaAs, taking on the character of high resistivity, and the effects of backgating or sidegating are effectively restrained.

Light-excited structural instability of a-Si : H.

With the accumulation of experimental data, it has been recognized by many that the light-induced metastable change of a-Si:H, Staebler-Wronski effect (SWE), may be related to a structural instability of the whole a-Si:H network. However, direct evidence of such a structural change is still lacking. In the present paper, the efforts of our laboratory in this direction will be reviewed, including the light-induced changes of Si-H bond absorption, low frequency dielectric response, and an apparent photo-dilation effect.

Hydrogen behavior in GaN epilayers grown by NH3-MBE

Hydrogen behavior in unintentionally doped GaN epilayers on sapphire substrates grown by NH3-MBE is investigated. Firstly, we find by using nuclear reaction analysis (NRA) that with increasing hydrogen concentration the background electron concentration increases, which suggests that there exists a hydrogen-related donor in undoped GaN, Secondly, Fourier transform infrared (FTIR) absorption and X-ray photoelectron spectroscopy (XPS) reveal Further that hydrogen atom is bound to nitrogen atom in GaN with a local vibrational mode at about 3211 cm(-1) Hence, it is presumed that the hydrogen-related complex Ga. . .H-N is a hydrogen-related donor candidate partly responsible for high n-type background commonly observed in GaN films. Finally, Raman spectroscopy results of the epilayers show that ill addition to the expected compressive biaxial strain, in some cases GaN films suffer from serious tensile biaxial strain. This anomalous behavior has been well interpreted in terms of interstitial hydrogen lattice dilation. (C) 2001 Elsevier Science B.V. All rights reserved.