智能制造装备数字化设计与验证系统研究

智能制造装备的设计水平不高是制约我国装备制造业发展因素之一。在阐述智能制造装备特点的基础上,提出了一种基于CORBA规范的智能制造装备数字化设计与验证系统的体系结构,并探讨了实现该系统的关键技术。该系统的目的是降低智能制造设备开发成本,缩短开发周期,提高智能制造装备的设计质量。

On the design of the piecewise linear vibration absorber

This paper explores the potential of the piecewise linear vibration absorber in a system subject to narrow band harmonic loading. Such a spring is chosen because the design of linear springs is common knowledge among engineers. The two-degrees-of-freedom system is solved by using the Incremental Harmonic Balance method, and response aspects such as stiffness crossing frequency and jump behaviour are discussed. The effects of mass, stiffness, natural frequency ratios, and stiffness crossing positions on the suppression zone are probed. It is shown that a hardening absorber can deliver a wider bandwidth than a linear one over a range of frequencies. The absorber parameters needed to produce good designs have been determined and the quality of the realized suppression zone is discussed. Design guidelines are formulated to aid the parameter selection process.

Design and application of three-zone annular filters

We design three-zone annular filters to be applied to optical storage system. The designed filters extend the depth of focus and realize transverse superresolution simultaneously, which will improve the performance of optical storage system greatly. And we propose two feasible schemes to improve imaging resolution of three-dimensional imaging system. One scheme depends on a complex filter formed by cascading of a three-zone phase filter and a three-zone amplitude filter. The complex filter converge the optimized transverse superresolution and the optimized axial superresolution of two different filters onto a single filter. It can improve the three-dimensional imaging performances greatly. Another scheme depends on a single three-zone complex filter. We propose a three-zone complex filter with phase shift 0.8 pi, which presents bigger design margin, better imaging quality and stronger three-dimensional superresolution capability. (c) 2006 Elsevier GmbH. All rights reserved.

Design, fabrication and characterization of a high-performance microring resonator in silicon-on-insulator

A high-performance microring resonator in a silicon-on-insulator rib waveguide is realized by using the electron beam lithography followed by inductively coupled plasma etching. The design and the experimental realization of this device are presented in detail. In addition to improving relevant processes to minimize propagation loss, the coupling efficiency between the ring and the bus is carefully chosen to approach a critical coupling for high performance operating. We have measured a quality factor of 21,200 and an extinction ratio of 12.5dB at a resonant wavelength of 1549.32nm. Meanwhile, a low propagation loss of 0.89dB/mm in a curved waveguide with a bending radius of 40 mu m is demonstrated as well.

Design of high polarization and single-mode photonic crystal laser

The dipole mode in triangular photonic crystal single defect cavity is degenerate. By deforming the lattice in photonic crystal we can obtain non-degenerate dipole modes. Lattice deforming in the whole photonic crystal destroys the characteristic of symmetry, so the distribution of the electromagnetic field is affected and the polarization of the electromagnetic field is also changed. Lattice deforming divides the degenerate dipole mode into the x-dipole mode and the y-dipole mode. It is found that the non-degenerate modes have better properties of polarization. So the high polarization and single dipole mode photonic crystal laser can be achieved by deforming the lattice of photonic crystal. In this paper, we simulated the cavity in photonic crystal slab and mainly calculated the quality factor of x-dipole mode under different deforming conditions and with different filling factors. The properties of polarization of x-dipole and y-dipole modes are also calculated. It is found that the ratio of intensities of E-x to E-y in x-dipole mode and that of E-y to E-x in y-dipole mode are 44 and 27, respectively.

Design of the low-temperature AlN interlayer for GaN grown on Si(111) substrate

We have investigated the effect of the thickness and layer number of the low-temperature A1N interlayer (LT-A1N IL) on the stress relaxation and the crystal quality of GaN epilayers grown on Si (111) substrate by metalorganic chemical vapor deposition. It is found that the stress decreases with the increase of the LT-AIN IL thickness, but the crystal quality of the GaN epilayer goes worse quickly when the LT-AIN IL thickness is larger than 16 nm. This is because the increase of the LT-AIN IL thickness will increase the coalescence thickness of its upper GaN layer, which sensitively affects the crystal quality of the epilayer. Using multiple LT-AIN ILs is an effective method not only to reduce the stress, but also to improve the crystal quality of the GaN epilayer. With the increase of the interlayer number, the probability that dislocations are blocked increases and the probability that dislocations are produced at interfaces decreases. Thus, dislocations in the most upper part of GaN are reduced, resulting in the improvement of the crystal quality. Finally, it is suggested that when the total thickness of the epilayer is fixed, both the thickness and the number of the LT-AIN IL should be carefully designed to reduce the stress and improve the crystal quality of the epilayer simultaneously. (c) 2004 Elsevier B.V.. All rights reserved.

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Design of two-dimensional photonic crystal edge emitting laser for photonic integrated circuits

An edge emitting laser based on two-dimensional photonic crystal slabs is proposed. The device consists of a square lattice microcavity, which is composed of two structures with the same period but different radius of air-holes, and a waveguide. In the cavity, laser resonance in the inner structure benelits from not only the anomalous dispersion characteristic of the first band-edge at the M point in the first Brillouin-zone but also zero photon states in the outer structure. A line defect waveguide is introduced in the outer structure for extracting photons from the inner cavity. Three-dimensional finite-difference time-domain simulations apparently show the in-plane laser output from the waveguide. The microcavity has an effective mode volume of about 3.2(lambda/eta(slab))(3) for oscillation -mode and the quality factor of the device including line defect waveguide is estimated to be as high as 1300.

Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m)

In this paper, we conduct a theoretical analysis of the design, fabrication, and performance measurement of high-power and high-brightness strained quantum-well lasers emitting at 0.98 mum, The material system of interest consists of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers. Some key parameters of the laser structure are theoretically analyzed, and their effects on the laser performance are discussed. The laser material is grown by metal-organic chemical vapor deposition and demonstrates high quality with low-threshold current density, high internal quantum efficiency, and extremely low internal loss. High-performance broad-area multimode and ridge-waveguide single-mode laser devices are fabricated. For 100-mum-wide stripe lasers having a cavity length of 800 mum, a high slope efficiency of 1.08 W-A, a low vertical beam divergence of 34 degrees, a high output power of over 4.45 W, and a very high characteristic temperature coefficient of 250 K were achieved. Lifetime tests performed at 1.2-1.3 W (12-13 mW/mum) demonstrates reliable performance. For 4-mum-wide ridge waveguide single-mode laser devices, a maximum output power of 394 mW and fundamental mode power up to 200 mW with slope efficiency of 0.91 mW/mum are obtained.

Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y

High performance InGaAsP/InGaAsP strained compensated multiple-quantum-well (MQW) electroabsorption modulators (EAM) monolithically integrated with a DFB laser diode have been designed and realized by ultra low metal-organic vapor phase epitaxy (MOVPE) based on a novel butt joint scheme. The optimization thickness of upper SCH layer for DFB and EAM was obtained of the proposed MQW structure of the EAM through numerical simulation and experiment. The device containing 250(mu m) DFB and 170(mu m) EAM shows good material quality and exhibits a threshold current of 17mA, an extinction ratio of higher than 30 dB and a very high modulation efficiency (12dB/V) from 0V to 1V. By adopting a high-mesa ridge waveguide and buried polyimide, the capacitance of the modulator is reduced to about 0.30 pF corresponding to a 3dB bandwidth more than 20GHz.

Si based quantum cascade structure: from energy band structures design to materials growth

In this paper, we propose an n-type vertical transition bound-to-continuum Ge/SiGe quantum cascade structure utilizing electronic quantum wells in the L and Gamma valleys of the Ge layers. The optical transition levels are located in the quantum wells in the L valley. The Gamma-L intervalley scattering is used to depopulate the lower level and inject the electrons into the upper level. We also show that high quality Si1-yGey pseudosubstrate is obtained by thermal annealing of Si1-xGex/Ge/Si structure. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

High quality microcrystalline Si films by hydrogen dilution profile

Novel hydrogen dilution profiling (HDP) technique was developed to improve the uniformity in the growth direction of mu c-Si:H thin films prepared by hot wire chemical vapor deposition (HWCVD). It was found that the high H dilution ratio reduces the incubation layer from 30 nm to less than 10 nm. A proper design of hydrogen dilution profiling improves the uniformity of crystalline content, X-c, in the growth direction and restrains the formation of micro-voids as well. As a result the compactness of mu c-Si:H films with a high crystalline content is enhanced and the stability of mu c-Si:H thin film against the oxygen diffusion is much improved. Meanwhile the HDP mu c-Si:H films exhibit the low defect states. The high nucleation density from high hydrogen dilution at early stage is a critical parameter to improve the quality of mu c-Si:H films. (c) 2006 Published by Elsevier B.V.

Design of surface emitting distributed feedback quantum cascade laser with single-lobe far-field pattern and high outcoupling efficiency

A 7.8-mu m surface emitting second-order distributed feedback quantum cascade laser (DFB QCL) structure with metallized surface grating is studied. The modal property of this structure is described by utilizing coupled-mode theory where the coupling coefficients are derived from exact Floquet-Bloch solutions of infinite periodic structure. Based on this theory, the influence of waveguide structure and grating topography as well as device length on the laser performance is numerically investigated. The optimized surface emitting second-order DFB QCL structure design exhibits a high surface outcoupling efficiency of 22% and a low threshold gain of 10 cm(-1). Using a pi phase-shift in the centre of the grating, a high-quality single-lobe far-field radiation pattern is obtained.

Design and Realization of Resonant Tunneling Diodes with New Material Structure

A new material structure with Al0.22Ga(>. 78 As/Ino.i5 Gao.ss As/GaAs emitter spacer layer and GaAs/Ino.15-Gao.8ii As/GaAs well for resonant tunneling diodes is designed and the corresponding device is fabricated. RTDs DC characteristics are measured at room temperature. Peak-to-valley current ratio and the available current density for RTDs at room temperature are computed. Analysis on these results suggests that adjusting material structure and optimizing fabrication processes will be an effective means to improve the quality of RTDs.