Cross-relaxation dynamics on anomalous saturation processes in low pressure supersonic cw HF chemical laser amplifier

It is assumed that both translational and rotational nonequilibrium cross-relaxations play a role simultaneoulsy in low pressure supersonic cw HF chemical laser amplifier. For two-type models of gas flow medium with laminar and turbulent flow diffusion mixing, the expressions of saturated gain spectrum are derived respectively, and the numerical calculations are performed as well. The numerical results show that turbulent flow diffusion mixing model is in the best agreement with the experimental result.

Study on the beta relaxation mechanism of thermosetting polyimide thermoplastic polyimide blends

The thermosetting polyimide PMR-I5 and its blends with thermoplastic polyimides have been studied by dynamic mechanical analysis. The results obtained indicate that the level of beta relaxations in PMR-15 are increased with an increase in cross-linking density. This phenomenon is interpreted as a change of chemical structure during the cross-linking process. Addition of thermoplastic polyimide makes the magnitude of beta relaxations increase when PMR-15 is the major component. This might be due to the strong intermolecular charge-transfer interaction between PI and PI or PMR-15 and PMR-15 molecular chains being partly replaced by the weak intermolecular interaction between PI and PMR-15 in PMR-15/PI blends, resulting in some phenylene rings or imide groups in PIs and PMR-15 chains being able to participate in beta relaxation. However, this increment in beta relaxation magnitude can be reduced by heat treatment of the sample, as a result of phase separation. Hence, it is concluded that the beta relaxation magnitude is determined by the number of groups which can participate in relaxation per unit length, i.e. the magnitude of beta relaxation increases with decreasing interaction between the molecular chains. Copyright (C) 1996 Elsevier Science Ltd

Investigation on Nonequlibrium Radiation and Relaxation Phenomena in Shock Tubes

The experimental results for the excited time of the nonequlibrium radiation and the ionization behind strong shock waves are presented. Using an optical multichannel analyzer, InSb infrared detectors and near-free-molecular Langmuir probes, the infrared radiation, the electron density of air and the nonequilibrium radiation spectra at different moments of the relaxation process in nitrogen test gas behind normal shock waves were obtained, respectively, in hydrogen oxygen combustion driven shock tubes.

Phase relaxation model for 2-phase flows

A phase relaxation model (PRM) for 2-phase flows is presented in this paper on the basis of three principal assumptions. The basic equations for PRM arc derived from the Boltzmann equations for gas-partlcle mixture, The general characteristics and solving process of the PRM's basic equations are also presented and discussed. Many terms in the PRM's basic equations contain a factor ε= ρgρp/ρg+ρp2 which is an intrinsic small parameter for 2-phase mixture, with ρg and ρp being respectively the densities of gas and particle phases.This makes it possible to simplify the computation of the PRM's basic equations. The model is applied to for example, studying file steady propagation of shock waves in gas-particle mixture. The analysis shows that with an increase of shock wave strength the relaxation process behind a gasdynamics shock front becomes a kind of dynamics relaxation instead of the standard exponential relaxation process. A method of determining experimentally the velocity and tem...更多perature relaxation rates (or times) of gas-particle flows is suggested and analyzed.

808 nm 抽运的Ho3+，Tm3+及Er3+掺杂的氟磷酸盐 玻璃的2.0 μm 光谱性质研究

2.0 μm spectroscopic properties of Er³⁺/Tm³⁺/Ho³⁺ triply-doped fluorophosphate glasses pumped by 808 nm and the energy transfer mechanisms between the three rare earth ions were investigated. J-O theory was used to calculate the parameters of Ho³⁺ in fluorophosphate glasses. Absorption and emission cross-sections and the gain coefficients were calculated. The obtained lifetime r and spontaneous transition probability Ar of Ho³⁺:⁵I7 level were 10.64 ms and 93.95 s^-1 respectively. The calculated maximum emission cross-section of 2.0 μm was 9.26×10^-21 cm². The energy transfer analysis indicated that the cross-relaxation of Tm³⁺ was important and the resonent energy transfer in Er³⁺&rarrHo³⁺, Tm³⁺&rarrHo³⁺, Er³⁺&rarrTm³⁺&rarrHo³⁺ process was the main channel. The study revealed that the Er³⁺/Tm³⁺/Ho³⁺ triply-doped fluorophosphate glass would be a potential material for 2.0 μm emission because of the efficient sensitization of Er³⁺ and Tm³⁺ to Ho³⁺.

Temperature dependence of hole spin relaxation in ultrathin InAs monolayers

The temperature dependence of hole spin relaxation time in both neutral and n-doped ultrathin InAs monolayers has been investigated. It has been suggested that D'yakonov-Perel (DP) mechanism dominates the spin relaxation process at both low and high temperature regimes. The appearance of a peak in temperature dependent spin relaxation time reveals the important contribution of Coulomb scatterings between carriers to the spin kinetics at low temperature, though electron-phonon scattering becomes dominant at higher temperatures. Increased electron screening effect in the n-doped sample has been suggested to account for the shortened spin relaxation time compared with the undoped one. The results suggest that hole spins are also promising for building solid-state qubits.

Carrier spin relaxation in (Ga, Mn) As at room temperature

In this paper, the excitation energy density dependence of carrier spin relaxation is studied at room temperature for the as-grown and annealed (Ga, Mn) As samples using femtosecond time-resolved pump-probe Kerr spectroscopy. It is found that spin relaxation lifetime of electrons lengthens with increasing excitation energy density for both samples, and the annealed ( Ga, Mn) As has shorter carrier recombination and electron spin relaxation lifetimes as well as larger Kerr rotation angle than the as-grown ( Ga. Mn) As under the same excitation condition. which shows that DP mechanism is dominant in the spin relaxation process for ( Ga, Mn)As at room temperature. The enhanced ultrafast Kerr effect in the annealed (Ga,Mn)As shows the potential application of the annealed ( Ga, Mn) As in ultrafast all-optical spin switches, and also provides a further evidence for the p-d exchange mechanism of the ferromagnetic origin of (Ga, Mn) As.

Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well

We have investigated the exciton spin relaxation in a GaInNAs/GaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192 ps at 10 K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50 K suggests that both the D'yakonov-Perel' and the Elliot-Yafet effects dominate the spin relaxation process. The temperature independence below 50 K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers. (c) 2008 American Institute of Physics.

Spin relaxation dynamics in InAs monolayer and submonolayer

By using time-resolved photoluminescence and time-resolved Kerr rotation, we have studied the unique electron spin dynamics in InAs monolayer (ML) and submonolayer (SML), which were sandwiched in GaAs matrix. Under non-resonant excitation, the spin relaxation lifetimes of 3.4 ns and 0.48 ns were observed for 1/3 ML and I ML InAs samples, respectively. More interestingly, the spin lifetime of the 1/3 ML InAs decreased dramatically under resonant excitation, down to 70 ps, while the spin lifetime of the 1 ML sample did not vary much, changing only from 400 to 340 ps. These interesting results come from the different electron-hole interactions caused by different spatial electron-hole correlation, and they provide a direct evidence of the dominant spin relaxation process, i.e. the BAP mechanism. Furthermore, these new results may provide a valuable enlightenment in controlling the spin relaxation and in seeking new material systems for spintronics application.

Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties

The evolution of strain and structural properties of thick epitaxial InGaN layers grown on GaN with different thicknesses are investigated. It is found that, with increase in InGaN thickness, plastic relaxation via misfit dislocation generation becomes a more important strain relaxation mechanism. Accompanied with the relaxation of compressive strain, the In composition of InGaN layer increases and induces an apparent red-shift of the cathodoluminescence peak of the InGaN layer. On the other hand, the plastic relaxation process results in a high defect density, which degrades the structural and optical properties of InGaN layers. A transition layer region with both strain and In composition gradients is found to exist in the 450-nm-thick InGaN layer.

ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON

The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si:H film has been investigated. Ac constant photocurrent method has been used to measure the absorption spectrum. The absorption in the defect region increases with the light pulse duration.The analysis of obtained results does not support the existence of a long time relaxation process of dangling-bond states in a-Si:H.

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

We have investigated the temperature dependence of photoluminescence (PL) properties of a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging from 0.5 to 3 ML. The temperature dependence of InAs exciton emission and linewidth was found to display a significant difference when the InAs layer thickness is smaller or larger than the critical thickness around 1.7 ML. The fast redshift of PL energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled InAs quantum dots. The measured thermal activation energies of different samples demonstrated that the InAs wetting layer may act as a barrier for the thermionic emission of carriers in high-quality InAs multilayers, while in InAs monolayers and submonolayers the carriers are required to overcome the GaAs barrier to escape thermally from the localized states.

Isotope effect in proton-transfer and association-dissociation reactions for butylamine by ultrasonic relaxation methods

Ultrasonic absorption coefficients were measured for butylamine in heavy water (D2O) in the frequency range from 0.8 to 220 MHz and at concentrations from 0.0278 to 2.5170 mol dm(-3) at 25 degrees C; two kinds of relaxation processes were observed. One was found in relatively dilute solutions (up to 0.5 mol dm(-3)), which was attributed to the hydrolysis of butylamine. In order to compare the results, absorption measurements were also carried out in light water (H2O). The rate and thermodynamic parameters were determined from the concentration dependence of the relaxation frequency and the maximum absorption per wavelength. The isotope effects on the diffusion-controlled reaction were estimated and the stability of the intermediate of the hydrolysis was considered while comparing it with the results for propylamine in H2O and D2O. Another relaxation process was observed at concentrations greater than 1 mol dm(-3) in D2O. In order to examine the solution characteristics, proton NMR measurements for butylamine were also carried out in D2O. The chemical shifts for the gamma- and delta-proton in butylamine molecule indicate the existence of an aggregate. From profiles of the concentration dependence of the relaxation frequency and the maximum absorption per wavelength of sound absorption, the source of the relaxation was attributed to an association-dissociation reaction, perhaps, associated with a hydrophobic interaction. The aggregation number, the forward and reverse rate constants and the standard volume change of the reaction were determined. It was concluded from a comparison with the results in H2O that the hydrophobic interaction of butylamine in D2O is stronger than that in H2O. Also, the isotope effect on this reaction was interpreted in terms of the solvent structure.

Analysis of structural relaxation in a Li(2)O2SiO(2) glass using rate heating approach

The structural relaxation process of an inorganic glass (Li(2)O2SiO(2)) at different cooling rates has been studied by differential scanning calorimetry. A four-parameter model-Tool-Narayanaswamy-Moynihan (TNM) model was applied to simulate the normalized specific heat curve measured. Four parameters, Delta h*/R, beta, In A, and x were obtained and compared with the values obtained from the isothermal approach. (C) 1999 Kluwer Academic Publishers.

A phenomenological study of the structural relaxation of an inorganic glass (Li(2)O2SiO(2))

The structural relaxation process of an inorganic glass (Li(2)O2SiO(2)) has been studied by differential scanning calorimetry. The sample is subjected to different thermal ageing histories with isothermal stages at an ageing temperature of T-g - 30 degrees C for different ageing times and at an ageing time of 16 h for different ageing temperatures. A four-parameter Tool-Narayanaswamy-Moynihan (TNM) model, is applied to simulate the normalized specific-heat curves measured. The ageing-temperature and ageing-time dependence of the structural relaxation parameters in the TNM model is obtained. (C) 1998 Elsevier Science S.A. All rights reserved.