ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON
| Data(s) |
1994
|
|---|---|
| Resumo |
The influence of pulsed bias light excitation on the absorption in the defect region of undoped a-Si:H film has been investigated. Ac constant photocurrent method has been used to measure the absorption spectrum. The absorption in the defect region increases with the light pulse duration.The analysis of obtained results does not support the existence of a long time relaxation process of dangling-bond states in a-Si:H. |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
KAZANSKII AG; MAO Y; KONG GL.ON THE DANGLING-BOND RELAXATION PROBLEM IN HYDROGENATED AMORPHOUS-SILICON,SOLID STATE COMMUNICATIONS ,1994,91(6):447-449 |
| Palavras-Chave | #半导体材料 #A-SI-H |
| Tipo |
期刊论文 |
