Electronic structure of interfaces between copper-hexadecafluoro-phthalocyanine and 2,5-bis(4-biphenylyl) bithiophene

The interfaces formed between copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were examined using photoemission and inverse photoemission spectroscopy. It is observed that in F16CuPc/BP2T the heterojunction is characterized by band bending in both materials, while in BP2T/F16CuPc the band bending is confined in BP2T only. The combination of the band bending and finite Debye lengths provides an explanation to the observed ambipolar behavior of the organic thin film transistors based on such heterojunctions.

Ambipolar organic heterojunction transistors with various p-type semiconductors

Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices.

Single-crystal-like organic heterojunction with 40 nm thick charge accumulation layers

Single-crystal-like organic heterojunction films of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc) were fabricated by weak-epitaxy-growth method. The intrinsic properties of organic heterojunction were revealed through threshold voltage shift of field-effect transistors and measurement of single-crystal-like diodes. At both sides of the heterojunction interface 40 nm thick charge accumulation layers formed, which showed that the long carriers' diffusion length is due to the high crystallinity and low density of deep bulk traps of single-crystal-like films.

Ambipolar organic field-effect transistors with air stability, high mobility, and balanced transport

Ambipolar organic field-effect transistors (OFETs) based on the organic heterojunction of copper-hexadecafluoro-phthalocyanine (F16CuPc) and 2,5-bis(4-biphenylyl) bithiophene (BP2T) were fabricated. The ambipolar OFETs eliminated the injection barrier for the electrons and holes though symmetrical Au source and drain electrodes were used, and exhibited air stability and balanced ambipolar transport behavior. High field-effect mobilities of 0.04 cm(2)/V s for the holes and 0.036 cm(2)/V s for the electrons were obtained. The capacitance-voltage characteristic of metal-oxide-semiconductor (MOS) diode confirmed that electrons and holes are transported at F16CuPc and BP2T layers, respectively. On this ground, complementary MOS-like inverters comprising two identical ambipolar OFETs were constructed.

Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors

A diode with a reverse rectifying characteristics was fabricated based on the organic heterojunction of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc). At the heterojunction interface, HOMO of CuPc is bended upwards and LUMO of F16CuPc is bended downwards, since the charge carriers were accumulated at both side of the interface, electrons in F16CuPc and holes in CuPc. The thickness of holes accumulated at the CuPc layer is about 10 nm. which was determined by fabricating organic field-effect transistors with active layers in series of thickness. By utilizing the heterojunction-effect, the threshold voltage in organic transistors can be modified.

Influence of gate dielectrics on charge transport in copper phthalocyanine thin-film transistors

Copper phthalocyanine organic thin-film transistors (OTFTs) were fabricated with top-gate geometry and the effects of different gate dielectrics on the transport proper-ties in OTFTs were studied. The mobility was found to be gate voltage dependent and the results showed that besides the charge density in the accumulation layer, the energetic disorder induced by gate dielectrics played an important role in determining the field-effect mobility in OTFTs.

Fabrication of an integrated pixel with an organic light-emitting diode driven by copper phthalocyanine organic thin film transistors

An organic integrated pixel with organic light-emitting diodes (OLEDs) driven by organic thin film transistors (OTFTs) is fabricated by a greatly simplified processing. The OTFTs are based on copper phthalocyanine as the active medium and fabricated on indium-tin-oxide (ITO) glass with top-gate structure, thus an organic integrated pixel is easily made by integrating OLED with OTFT. The OTFTs show field-effect mobility of 0.4 cm(2) /Vs and on/off ratio of 10(3) order. The OLED is driven well and emits the brightness as large as 2100cd/m(2) at a current density of 14.6 mu A/cm(2) at -19.7 V gate voltage. This simple device structure is promising in the future large-area flexible OLED displays.

Realization of negative differential resistance and switching devices based on copper phthalocyanine by the control of evaporation rate

We have observed, respectively, a negative differential resistance (NDR) and switching conduction in current-voltage (I-V) characteristics of organic diodes based on copper phthalocyanine (CuPc) film sandwiched between indium-tin-oxide (ITO) and aluminum (Al) by controlling the evaporation rate. The NDR effect is repeatable which can be well, controlled by sweep rate and start voltage, and the switching exhibits write-once-read-many-times (WORM) memory characteristics. The traps in the organic layer and interfacial dipole have been used to explain the NDR effect and switching conduction. This opens up potential applications for CuPc organic semiconductor in low power memory and logic circuits.

Electrical characterization of copper phthalocyanine thin-film transistors with fluoride gate insulator

Different fluoride materials are used as gate dielectrics to fabricate copper phthalocyanine (CuPc) thin film. transistors (OTFTs). The fabricated devices exhibit good electrical characteristics and the mobility is found to be dependent on the gate voltage from 10(-3) to 10(-1) cm(2) V(-1)s(-1). The observed noticeable electron injection at the drain electrode is of great significance in achieving ambipolar OTFTs. The same method for formation of organic semiconductors and gate dielectric films greatly simplifies the fabrication process. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for integration in organic displays.

Electrical characteristics of copper phthalocyanine thin-film transistors with polyamide-6/polytetrafluoroethylene gate insulator

Polyamide- 6(PA 6)/polytetrafluoroethylene is studied as a potential gate dielectric for flexible organic thin film transistors. The same method used for the formation of organic semiconductor and gate dielectric films greatly simplifies the fabrication process of devices. The fabricated transistors show good electrical characteristics. Ambipolar behaviour is observed even when the device is operated in air.

Study on the instability of organic field-effect transistors based on fluorinated copper phthalocyanine

The effects of positive and negative gate-bias stress on organic field-effect transistors (OFET) based on tantalum (Ta)/tantalum pentoxide (Ta2O5)/fluorinated copper phthalocyanine (F16CuPc) structure are investigated as a function of stress time and stress temperature. It is shown that gate-bias stress induces a parallel threshold voltage shift (DeltaV(T)) of OFETs without changes of field-effect mobility mu(EF) and sub-threshold slope (DeltaS). The DeltaV(T) is observed to be logarithmically dependent on time at high gate-bias appropriate to OFET operation. More importantly, the shift is directional, namely, be large shift under positive stress and almost do not move under negative stress. The threshold voltage shift is temperature dependent with activation energy of 0.51 eV We concluded that threshold voltage shift of the OFET with F16CuPc as active layer is due to charge trapping in the insulator in which trapped carriers have redistribution.

Interfacial electronic structure of copper phthalocyanine and copper hexadecafluorophthalocyanine studied by photoemission

Electronic structures of the heterojunction between copper phthalocyanine (CuPc) and copper hexadecafluorophthalocyanine (F16CuPc) were studied with ultraviolet photoemission spectroscopy. Band bending and an interface dipole were observed at the interface due to the formation of an electron accumulation layer and a depletion layer in F16CuPc and CuPc, respectively. Such an energy level alignment leads to interesting ambipolar characteristics for application of the CuPc/F16CuPc junction in organic field-effect transistors.

Copper phthalocyanine based hybrid p-type permeable-base transistor in vertical architecture

We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top of a Si substrate that acts as collector. In the sequence CuPc and Au are thermally sublimated to produce the emitter, constituting a quite simple device production procedure with the additional advantage of allowing higher integration due to its vertical architecture.

An investigation on air stability of copper phthalocyanine-based organic thin-film transistors and device encapsulation

The device performances of copper phthalocyanine (CuPc)-based organic thin-film transistors (OTFTs) in main components of air were studied. We found that the device stored in O-2 humidified by water exhibited the changes of electric characteristics including positive-shifted threshold voltage and lower I-on/I-off but unchanged mobility, which was similar to the device exposed to room air. These changes are attributed to O-2 doping to copper phthalocyanine thin film assisted by water. Furthermore, a cross-linked polyvinyl alcohol film was used as encapsulation layer to prevent the permeation of O-2 and water, which resulted in excellent stability even when devices were placed in air for over a year. Therefore, current studies will push the development of OTFTs for practical applications.

Copper phthalocyanine organic thin-film transistors with calcium fluoride gate insulator

We report the fabrication of organic thin-film transistors (OTFTs) with copper phthalocyanine (CuPc) as the semiconductor and calcium fluoride (CaF2) as the gate dielectric on the glass substrate. The fabricated transistors show a gate voltage dependent carrier field effect mobility that ranges from 0.001 to 0.5 cm(2) V-1 s(-1). In the devices, the CaF2 dielectric is formed by thermal evaporation; thus OTFTs with a top-gate structure can be fabricated. This provides a convenient way to produce high-performance OTFTs on a large scale and should be useful for the integration of organic displays.