高压扭转铜试样的微观组织与压缩性能

通过高压扭转对铜试样施加不同程度的变形，研究了样品扭转面（ND面）和纵截面（TD面）上微观组织特征．对ND面，在较小的剪应变下，原始晶粒形貌模糊，晶粒内部形成等轴状的位错胞及亚晶结构；随变形量的增大，亚晶间取向差及亚晶内部的位错密度增大，最后形成亚微米尺度的等轴晶粒．对TD面，变形初期原始晶粒被拉长，晶粒内部为位错墙分割成的层状结构，层内为拉长的位错胞；随变形程度的增大，拉长晶粒的宽度减小，与剪切方向的夹角减小，晶内层状组织间距减小，并逐渐演化成拉长的亚晶组织；进一步增大变形，晶粒拉长痕迹消失，变形组织与ND面相似，为等轴状亚微米晶粒．压缩实验表明，经16圈扭转后，整个试样上的压缩性能基本均匀，σ0．2达到385MPa，应变率敏感性指数增大至0．021．

Nanocrystalline LaGaO3 : Tm3+ as an efficient blue phosphor for field emission displays with high color purity

Nanocrystalline Tm3+-doped LaGaO3 phosphors were prepared through a Pechini-type sol-gel process [M. P. Pechini, U.S. Patent No. 3,330,697 (11 July 1967)]. X-ray diffraction, field emission scanning electron microscopy, photoluminescence, and cathodoluminescence (CL) spectra were utilized to characterize the synthesized phosphors. Under the excitation of ultraviolet light and low voltage electron beams (0.5-3 kV), the Tm3+-doped LaGaO3 phosphors show the characteristic emissions from the LaGaO3 host lattice and the Tm3+ (D-1(2), (1)G(4)-F-3(4), and H-3(6) transitions), respectively. The blue CL of the Tm3+-doped LaGaO3 phosphors, with a dominant wavelength of 458 nm, had better Commission International I'Eclairage chromaticity coordinates (0.1552, 0.0630) and higher emission intensity than the commercial product (Y2SiO5:Ce3+).

Cross spectral purity and its influence on ghost imaging experiments

Pseudo-thermal light has been widely used in ghost imaging experiments. In order to understand the differences between the pseudo-thermal source and thermal source, we propose a method to investigate whether a light source has cross spectral purity (CSP), and experimentally measure the cross spectral properties of the pseudo-thermal light source in near-field and far-field zones. Moreover we present a theoretical analysis of the cross spectral influence on ghost imaging. (c) 2006 Elsevier B.V. All rights reserved.

Hepatocyte growth factor enhances the generation of high-purity oligodendrocytes from human embryonic stem cells

Generation of homogeneous oligodendrocytes as donor cells is essential for human embryonic stem cell (hESC)-based cell therapy for demylinating diseases. Herein we present a novel method for efficiently obtaining mature oligodendrocytes from hESCs with high purity (79.7 +/- 6.9%), using hepatocyte growth factor (HGF) and G5 supplement(containing insulin, transferrin, selenite, biotin, hydrocortisone, basic fibroblast growth factor and epidermal growth factor) in a four-step method. We induced hESCs into neural progenitors (NP) with HGF (5 ng/ml) and G5 (1 x) supplemented medium in an adherent differentiation system. The purified NPs were amplified in suspension as neurospheres for 1 month, and terminal oligodendrocyte differentiation was then induced by G5 supplement withdrawal and HGF treatment (20 ng/ml). The cells generated displayed typical morphologies of mature oligodendrocytes and expressed oligodendrocyte markers O4 and myelin basic protein (MBP). Our result revealed that HGF significantly enhanced the proliferation of hESC-derived NPs and promoted the differentiation as well as the maturation of oligodendrocytes from NPs. Further studies suggest that HGF/c-Met signaling pathway might play an important role in oligodendrocyte differentiation in our system. Our studies provide a means for generating the clinically relevant cell type and a platform for deciphering the molecular mechanisms that control oligodendrocyte differentiation. (C) 2009 International Society of Differentiation. Published by Elsevier Ltd. All rights reserved.

A novel technique for predicting ionizing radiation effects of commercial MOS devices

A nondestructive selection technique for predicting ionizing radiation effects of commercial metal-oxide-semiconductor (MOS) devices has been put forward. The basic principle and application details of this technique have been discussed. Practical application for the 54HC04 and 54HC08 circuits has shown that the predicted radiation-sensitive parameters such as threshold voltage, static power supply current and radiation failure total dose are consistent with the experimental results obtained only by measuring original electrical parameters. It is important and necessary to choose suitable information parameters. This novel technique can be used for initial radiation selection of some commercial MOS devices.

Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats

In this study, we first present the process of the melt epitaxial (ME) growth method, and the improvement of low-temperature electron mobility of the long-wavelength InAsSb epilayers grown by ME in a fused silica boat. The electrical properties were investigated by van der Pauw measurement at 300 and 77 K. It is seen that the electron mobility of the InAsSb samples grown by graphite boat decreased from 55,700 to 26,600 cm(2)/V s when the temperature was reduced from 300 to 77 K, while for the samples grown by fused silica boat, the electron mobility increased from 52,600 at 300 K to 54,400 cm(2)/V s at 77 K. The electron mobility of 54,400cm(2)/Vs is the best result, so far, for the InAsSb materials with cutoff wavelength of 8-12 mum at 77 K. This may be attributed to the reduction of the carbon contamination by using a fused silica boat instead of a graphite boat. (C) 2002 Elsevier Science B.V. All rights reserved.

Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition

The optical properties of cubic GaN films have been investigated in the temperature range of 10-300 K. Five peaks were observed at 10 K. From the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 eV) to donor-acceptor pair (DAP) transitions. Furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 eV. The intensities of DAP transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (C) 2000 American Institute of Physics. [S0003-6951(00)00921-9].

Magnetospectroscopy of bound phonons in high purity GaAs

Far infrared magnetophotoconductivity performed on high purity GaAs reveals the existence of fine structures in the resonant magnetopolaron regions. The fine structures are attributed to the presence of bound phonons due to multiphonon processes. We demonstrate that the magnetopolaron energy spectrum consists of bound phonon branches and magnetopolaron branches. Our results also indicate that different phonons are bound to a single impurity, and that the bound phonon in Si-doped GaAs is a quasilocalized mode.