10 resultados para Centers of treatment of substance abuse and Promotion of Health

em Chinese Academy of Sciences Institutional Repositories Grid Portal


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Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

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Wurtzite ZnO has many potential applications in optoelectronic devices, and the hydrogenated ZnO exhibits excellent photoelectronic properties compared to undoped ZnO; however, the structure of H-related defects is still unclear. In this article, the effects of hydrogen-plasma treatment and subsequent annealing on the electrical and optical properties of ZnO films were investigated by a combination of Hall measurement, Raman scattering, and photoluminescence. It is found that two types of hydrogen-related defects, namely, the interstitial hydrogen located at the bond-centered (H-BC) and the hydrogen trapped at a O vacancy (H-O), are responsible for the n-type background conductivity of ZnO films. Besides introducing two hydrogen-related donor states, the incorporated hydrogen passivates defects at grain boundaries. With increasing annealing temperatures, the unstable H-BC atoms gradually diffuse out of the ZnO films and part of them are converted into H-O, which gives rise to two anomalous Raman peaks at 275 and 510 cm(-1). These results help to clarify the relationship between the hydrogen-related defects in ZnO described in various studies and the free carriers that are produced by the introduction of hydrogen.

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EPSRC, the European Community IST FP6 Integrated, etc

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Wheat straw was treated with microwave for 4 min and 8 min at a power of 750 W and frequency of 2,450 MHz. Chemical compositions of untreated, 4 min treated and 8 min treated Straws were analyzed and in sacco degradabilities of all these straws in yak rumens were measured. Microwave treatment didn't significantly (p > 0.05) affect the chemical composition of the straw. In sacco dry matter (DM) degradability of the straw after 18 h incubation in rumen was significantly (p < 0.01) improved by microwave treatment. In sacco crude protein (CP) degradability of the straw was not (p > 0.05) affected by microwave treatment. In sacco organic matter (OM) degradability of the straw was increased (p < 0.01) by around 20% for both the 4 min and 8 min microwave treatment, that of acid detergent fibre (ADF) was increased (p < 0.01) by 61.6% and 62.8%, and that of ash free ADF was enhanced by 72.1% and 69.6% for the 4 min and 8 min microwave treatment respectively. No significant difference was observed between the 4 min and 8 min microwave treatment on the degradability of DM, OM, CP, ADF and ash-free ADF of the straw.

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Two kinds of luminescent centers an observed in BaMgAl10O17:Eu2+ phosphor. Influence of flux on luminescence of Eu2+ in the phosphor is discussed in detail. There exists Eu2+ (F-) center (a luminescent center with 277 nm excitation band and 386 nm emission band) due to the substitution of F- ions for O2- ions, Effective energy transfer from Eu2+ (F-) to Eu2+ (O2-) (a luminescent center with 334 nm excitation band and 450 nm emission band) is observed. The quenching concentration of Eu2+ in BaMgAl10O17 is raised by 0.20 mole per mole host due to forming of new luminescent center Eu2+ (F-). (C) 2001 Elsevier Science Ltd. All rights reserved.

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The direct electron transfer of amino oxidase on electrode surface based on self-assembly technique occurs at 505 mW(vs. Ag/AgCl), indicating that copper atoms are the electron transfer centers and catalytic centers of amino oxidase.

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Eu3+ ion was adopted as a probe to detect the probability of entrance of alkali elements into the crystal lattice of MgO, CaO and La2O3 by means of its characteristic emission. Based on the experimental data it is concluded that Li+ and Na+ ions can substitute Mg2+ and Ca2+ ions and only a small amount of K+ ion can enter into the lattice of CaO. Whilst Li+ ion can not enter into the lattice of lanthana. The conclusion of this investigation is in good agreement with that obtained by Lunsford by ESR studies.